NTE6236
Powerblock Module
Description:
The NTE6236 uses 2 high voltage power diodes in series and the semiconductors are electrically
isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This
device is intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are required.
Features:
D
High Voltage
D
Electrically Isolated Base Plate
D
3000V
RMS
Isolating Voltage
D
High Surge Capability
D
Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (T
C
= +100°C, 180° Conduction, Half Sine Wave), I
F(AV)
. . . . . . . . . 250A
Maximum RMS Forward Current (As AC Switch), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 393A
Maximum Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, V
RSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse Current (T
J
= +150°C), I
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
ISO
. . . . . . . . 3000V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), R
thJC
. . . . . . . . . . . 0.16°C/W
Thermal Resistance, Case–to–Sink (Per Module, Note 1), R
thCS
. . . . . . . . . . . . . . . . . . . . 0.02°C/W
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
I
FSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Test Conditions
Sinusoidal Half Wave, 100% V
RRM
Reapplied, Initial T
J
= +150°C
°
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T
J
= +150°C
°
Rating
5900
6180
7015
7345
Unit
A
A
A
A
Electrical Specifications (Cont’d):
Parameter
Maximum I
2
t for Fusing
Symbol
I
2
t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I
2
pt
Threshold Voltage, Low level
Threshold Voltage, High level
Forward Slope Resistance, Low Level
Forward Slope Resistance, High Level
Maximum Forward Voltage Drop
I
2
pt
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
Test Conditions
Sinusoidal Half Wave, 100% V
RRM
Reapplied, Initial T
J
= +150°C
°
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T
J
= +150°C
°
Rating
174
159
246
225
2460
0.79
0.92
0.63
0.49
1.29
Unit
kA
2
s
kA
2
s
kA
2
s
kA
2
s
kA
2
pt
V
V
mΩ
mΩ
V
t = 0.1 to 10ms, no voltage reapplied
T
J
= +150°C, (16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
)
T
J
= +150°C, (π x I
T(AV)
< I < 20 x
π
x I
T(AV)
)
T
J
= +150°C, (16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
)
T
J
= +150°C, (π x I
T(AV)
< I < 20 x
π
x I
T(AV)
)
T
J
= +25°C, I
FM
=
π
x I
F(AV)
,
Av. Power = V
F(TO)
x I
T(AV)
+ r
f
x (I
F(RMS)
)
2
Circuit Diagram
AC
+
–
AC
+
–
K2
G2
G1
K1
M8 x 1.25 Screw
(3 Places)
1.380
(35.0)
1.120 (28.0)
.240 (6.0)
1.500
(38.0)
1.970
(50.0)
.790
(20.0)
.350 (9.0)
3.150 (80.0)
4.530 (115.0)
.240 (6.0)
1.260
(32.0)
2.010
(51.0)
.390
(10.0)
3.620 (92.0)
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