140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF904
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
Silicon NPN, high Frequency, To-72 packaged, Transistor
High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
2
•
High FT - 4 GHz (typ) @ IC = 15 mAdc
1
4
3
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general-purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
15
25
3.0
30
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
T
JMAX
T
STORAGE
Total Device Dissipation @ T
A
= 25º C
Derate above 25º C
Junction Temperature
Storage Temperature
200
1.14
200
-65 to +200
mWatts
mW/ ºC
°C
°C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF904
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= .1 mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc)
Value
Min.
15
25
3.0
-
Typ.
-
-
-
-
Max.
-
-
-
50
Unit
Vdc
Vdc
Vdc
nA
(on)
HFE
DC Current Gain
(IC = 5.0 mAdc, VCE = 5 Vdc)
30
-
200
-
DYNAMIC
Symbol
f
T
Test Conditions
Current-Gain - Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz)
Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
Noise Figure
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
Value
Min.
-
-
-
Typ.
4.0
-
1.5
Max.
-
1.5
-
Unit
GHz
pF
dB
CCB
NF
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF904
Functional
Symbol
G
U max
Test Conditions
Maximum Unilateral Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)
Maximum Available Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)
Maximum Available Gain (1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz)
2
2
2
Value
Min.
-
-
9.5
-
-
-
Typ.
11
7
10.5
6.5
11
7
Max.
-
-
-
-
-
-
Unit
dB
S
|21|
2
dB
MAG
dB
(1) Maximum Unilateral Gain = |S21| / (1 - |S11| ) (1 - |S22| )
Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA
f
S11
S21
S12
S22
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
.66
.41
.31
.26
.20
.18
.16
.16
.15
.15
∠φ
-37
-52
-54
-59
-61
-59
-60
-66
-74
-76
|S21|
10.5
7.03
5.33
4.00
3.38
3.00
2.69
2.30
2.16
2.16
∠φ
131
111
98
90
87
81
75
70
71
63
|S12|
.040
.065
.093
.111
.136
.162
.186
.200
.215
.243
∠φ
71
71
70
69
71
68
66
63
65
62
|S22|
.781
.597
.551
.517
.467
.455
.438
.437
.409
.413
∠φ
-23
-27
-26
-30
-30
-32
-36
-42
-47
-48
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MRF904
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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