1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
D IM E N S IO N S
D IM
A
B
C
D IM E N S IO N S
D IM
A
B
C
D
in c h e s
M in .
-
-
-
0 .6 3 0
M ax.
0 .11 4
0 .0 7 5
0 .0 1 7
-
M in .
-
-
-
1 6 .0
mm
M ax.
2 .9
1 .9
0 .4 2
-
N o te
D
in c h e s
M in .
-
-
-
1 .0 8 3
M ax.
0 .1 5 4
0 .0 7 5
0 .0 2 0
-
M in .
-
-
-
2 7 .5 0
mm
M ax.
3 .9
1 .9
0 .5 2
-
N o te
Electrical Characteristics
Type
Peak
reverse
voltage
V
RM
V
1N914
1N4149
1)
Max.
aver.
rectified
current
I
O
mA
75
150
200
150
150
150
2)
Max.
power
dissip.
at 25
P
tot
mW
500
500
500
400
400
500
500
500
400
400
400
400
Max.
junction
temper-
ature
T
j
200
200
200
175
175
200
200
200
175
175
175
175
Max. forward
voltage drop
Max. reverse
current
Max. reverse recovery time
V
F
V
1.0
1.0
1.0
0.55
0.55
1.0
1.0
1.0
0.54
0.50
0.55
1.0
at
I
F
mA
10
10
200
0.10
0.10
0.10
20
30
0.50
0.10
0.01
10
I
n
nA
25
25
100
50
50
100
25
25
50
50
50
100
at
V
R
V
20
20
50
30
50
25
20
20
30
30
20
50
t
rr
nS
Max. 4.0
Max. 4.0
Max. 4.0
Max. 2.0
Max. 2.0
Max. 2.0
Max. 4.0
Max. 4.0
Max. 4.0
Max. 10
-
Max. 4.0
Conditions
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
, to I
R
=1mA
, to I
R
=1mA
100
100
50
40
75
35
100
100
40
40
30
75
1N4150
1N4152
1N4153
1N4154
1N4447
1N4449
1)
1)
I
F
=I
R
=10 to 200 mA, to 0.1 I
F
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=10mA, V
R
=6V, R
L
=100
I
F
=I
R
=10mA, to I
R
=1mA
I
F
=I
R
=10mA, to I
R
=1mA
-
I
F
=I
R
=10mA, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
, to I
R
=1mA
150
150
150
150
150
150
1N4450
1N4451
1N4453
1N4454
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
P
tot
=300mW
T
S
=-65 to +175
T
J
=175
R
tha
0.4K/mW
1
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