InGaAs-APD/Preamp
Receiver
FEATURES
• Small Form Factor Package(GW): 9 pins coplanar
• Integrated Design Optimizes Performance at
Bit Rates up to 10.7Gb/s
• High Gain: 4kΩ(Single-ended), 8kΩ(Differential)
• High Sensitivity: -27dBm (typ.)
• Electrical Differential Output
• Wide Bandwidth: 8.5GHz (typ.)
• Operates in both C and L wavelength bands
• Wide Operating Temperature Range: -5°C to +75°C
FRM5N142GW
APPLICATIONS
This APD with HBT preamplifier is intended to function as an optical receiver
at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber
systems operating up to 10.7Gb/s. The typical transimpedance (Zt) value
of 4,000Ω optimizes the total bandwidth for 10Gb/s application. The detector
preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5N142GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs
HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The APD is
processed with modern MOVPE techniques resulting in a reliable performance over a wide
range of operating conditions. The lens coupling system and the single mode fiber are
assembled using Nd YAG welding.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
Parameter
Storage Temperature
Operating Temperature
Supply Voltage
PIN Reverse Voltage
PIN Reverse Current
Symbol
Tstg
Top
Vss
VR
IR
(peak)
Ratings
-40 to +85
-5 to +75
-6 to 0
0 to VB(Note)
5
Unit
°C
°C
V
V
mA
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
Edition 1.1
October 2003
1
FRM5N142GW
OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25°C,
λ=1,550nm,
Vss=-5.2V, unless otherwise specified)
Parameter
APD Responsivity
APD Breakdown Voltage
Temperature
Coefficient of VB
AC Transimpedance
Maximum Output
Voltage Swing
Bandwidth
Lower Cut-off Frequency
Peaking
Symbol
R13
R15
R16
VB
γ
Zt
Vclip
Test Conditions
λ
= 1,310nm, M=1
λ
= 1,550nm, M=1
λ
= 1,610nm, M=1
ID = 10µA
Note (1)
f = 750MHz, Single-end
Saturated Output Voltage,
Single-ended
-3dB from 750MHz,
Pin=-24dBm
M=9
M=3
InGaAs-APD/Preamp
Receiver
Min.
0.70
0.70
-
20.0
0.03
3500
250
7.5
7.5
-
-
-
-
-
-
-
-
-
-
-4
27
27
-
-5.46
9.5
3800
Limits
Typ.
0.85
0.90
0.80
25.0
0.05
4000
350
8.5
8.5
40
1.5
30
60
10
7
-27.0
-26.0
-25.0
-26.0
-2
-
-
80
-5.20
10.0
3900
Max.
-
-
-
30.0
0.07
-
450
-
Unit
A/W
V
V/°C
Ω
mV
BW
fcl
dpk
GHz
-
100
2.0
-
ps
p-p
-
-
-
-25.0
-
-
-24.0
-
-
-
130
-4.94
10.5
4000
dB
kHz
dB
-3dB from 750MHz, Pin=-24dBm
130MHz to BW, Pin=-24dBm,M=9
1GHz to 6GHz, Pin=-24dBm, M=9
Group Delay Deviation
GD
1GHz to 8GHz, Pin=-24dBm, M=9
Output Return Loss
S22
130MHz to 6GHz
130MHz to 8GHz
10Gb/s, NRZ,
PRBS=2
31
-1,
B.E.R.=10
-12
,
VR=Optimum
25°C, Rext=13dB
25°C, Rext=10dB
25°C, Rext=8.2dB
75°C, Rext=13dB
Minimum Sensitivity
Pr
dBm
Maximum Overload
Optical Return Loss
Power Supply Current
Power Supply Voltage
Thermistor Resistance
Thermistor B Constant
Po
ORL
Iss
Vss
Rth
B
10Gb/s, NRZ, PRBS=2
31
-1,
B.E.R.=10
-12
, Rext=13dB, M=3
λ
= 1,550nm
λ
= 1,310nm
-
-
-
-
dBm
dB
mA
V
kΩ
K
Note 1:
γ
=∆VB/∆Tc
Note: All the parameters are measured with 50Ω, AC-coupled.
2
InGaAs-APD/Preamp
Receiver
Notes
FRM5N142GW
3
FRM5N142GW
“GW” PACKAGE
InGaAs-APD/Preamp
Receiver
UNIT: mm
Lead Detail (x10)
8 - P0.8=6.4
2 - 0.2
7 - 0.4
4.0
2 - R1.1
Ø4.1
Ø0.9
0.6
(1.0)
Bending Radius 0.3
0.35 0.25
1
17.0
13.0
9.0
9
5.5
6.7
0.4
PIN # Symbol
1
VPD
VPreamp
GND
OUT
GND
OUT
GND
-
Rth
2.0
0.1
Function
PD BIAS (+)
Preamp BIAS
CASE GROUND
OUTPUT (-)
CASE GROUND
OUTPUT (+)
CASE GROUND
NC
THERMISTOR
1400 MIN.
5.0
2
3
4
5
6
7
8
9
2.6
28.0 MAX.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
2.3
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0103M200
4
2.6
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