P0120004P
1.5W GaAs Power FET (Pb-Free Type)
♦Features
· Up to 2.7 GHz frequency band
· Beyond +30 dBm output power
· Up to +45dBm Output IP3
· High Drain Efficiency
· 11dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Pin No.
1
2, 4
3
Technical Note
SUMITOMO ELECTRIC
♦Functional
Diagram
Function
Input/Gate
Ground
Output/Drain
4
1
Number
of devices
2
3
Container
7” Reel
Anti-static
Bag
♦Ordering
Information
Part No
P0120004P
KP024J
Description
GaAs Power FET
2.11-2.17GHz
Application Circuit
1000
1
♦Applications
·Wireless communication system
·Cellular, PCS, PHS, W-CDMA, WLAN
♦Description
P0120004P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Absolute
Maximum Ratings (@Tc=25°C)
Parameter
Symbol
Value
Units
Drain-Source Voltage
Vds
8
V
Gate-Source Voltage
Vgs
-4
V
Drain Current
Ids
Idss
---
RF Input Power
Pin
25
(*)
dBm
(continuous)
Power Dissipation
Pt
4.3
W
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
- 40 to +125
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
Values
Typ.
---
---
---
---
---
32
Vds=6V
Ids=400mA
f=2.1GHz
11
---
---
45
60
♦Electrical
Specifications (@Tc=25°C)
Parameter
DC
Saturated Drain Current
Transconductance
Pinchoff Voltage
Gate-Source Breakdown Voltage
RF
Thermal Resistance
Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
Symbol
Idss
gm
Vp
|Vgs0|
Rth
f
P1dB
G
IP3
η
add
Test Conditions
Vds=3V, Vg=0V
Vds=6V, Ids=500mA
Vds=6V, Ids=50mA
Igso= - 50µA
Channel-Case
Min.
---
450
- 3.0
3.0
---
Max.
1600
---
- 1.7
---
22
2.7
---
---
---
---
Units
mA
mS
V
V
°C/W
GHz
dBm
dB
dBm
%
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-1-
P0120004P
1.5W GaAs Power FET (Pb-Free Type)
♦Typical
Characteristics
Technical Note
SUMITOMO ELECTRIC
Total Power Dissipation (W)
6
5
4
3
2
1
00
Power Derating Curve
Drain Current (mA)
2000
1500
1000
500
0
0
Transfer Curve
Vgs=0V
-0.5V
-1.0V
-1.5V
-2.0V
50
100
Tc (°C)
150
200
2
4
Vds (V)
6
8
♦Load-pull
Characteristics (Typical Data)
Tc=25°C, Vds=6V,
Ids=400mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
6.0
1.0
0 .6
0 .8
2.0
90
2.4GHz
3 .0
4 .0
5 .0
1.2GHz
2.0
S21
45
4.0
5
13
13
1.2GHz
S11
S22
0.2
0.4
10.0
1.0
0.6
0.8
2.0
3.0
4.0
5.0
0
1.2GHz
- 0.2
0
- 0.
- 2.
6
-1
35
4
- 0.
Scale for |S21|
- 0.8
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-2-
-1.0
-1
-10 .0
-.
-4.
0
- .0
-5.0
- 3.
30
0
0 .4
2.4GHz
1.2GHz
S12
2.4GHz
02
0 .2
1 0.0
Scale for |S12|
-180
0
0
2.4GHz
0.02
0.04
0
0.06
5
5
-
-4
-90
-90
P0120004P
1.5W GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V,
Ids=350mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
6.0
0.8
Technical Note
SUMITOMO ELECTRIC
1.0
0.6
2.0
3.0
S11
S22
2.4GHz
4 .0
5.0
2.0
1.2GHz
S21
45
2.4GHz
4.0
5
5
13
13
90
1.2GHz
10.0
0.8
1.0
0.6
3.0
4.0
5.0
0.2
0.4
2.0
0
1.2GHz
- 0.
6
.0
-2
-1
35
-0
.4
Scale for |S21|
-0.8
Ids=400mA Freq (GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.841
0.843
0.845
0.847
0.848
0.849
0.849
-1.0
S11 Ang
173.7
165.7
158.6
152.2
146.1
140.2
134.1
S11 Ang
173.6
165.6
158.6
152.2
146.1
140.2
134.1
Ids=350mA Freq (GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.841
0.843
0.845
0.846
0.847
0.848
0.848
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-3-
- .
- 4.
0
- .
-5.0
-0.2
S21 M ag
4.002
3.433
3.005
2.673
2.410
2.200
2.028
S21 M ag
3.993
3.424
2.998
2.666
2.405
2.195
2.024
-1
-10.0
-3
-3
.0
0
0
0..
4
S12
2.4GHz
0.2
.2
10.0
Scale for |S12|
-180
0
0
2.4GHz
0.02
0.04
0
1.2GHz
0.06
5
-
-4
-90
-90
S21 Ang
66.2
58.9
52.1
45.5
39.1
32.7
26.3
S21 Ang
66.2
59.0
52.2
45.6
39.2
32.8
26.4
S12 M ag
0.040
0.043
0.046
0.049
0.052
0.056
0.059
S12 M ag
0.040
0.044
0.047
0.050
0.053
0.056
0.060
S12 Ang
34.2
32.8
31.0
28.9
26.4
23.6
20.2
S12 Ang
33.4
31.9
30.2
28.1
25.5
22.8
19.5
S22 M ag
0.459
0.464
0.470
0.475
0.481
0.488
0.499
S22 M ag
0.465
0.471
0.476
0.482
0.488
0.494
0.505
S22 Ang
167.3
162.8
158.6
154.2
149.6
145.1
140.1
S22 Ang
167.2
162.7
158.4
154.0
149.4
144.8
139.8
P0120004P
1.5W GaAs Power FET (Pb-Free Type)
Ids=400mA
80
60
40
20
Pout (dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
ηadd
(%)
Technical Note
SUMITOMO ELECTRIC
Ids=350mA
80
60
40
IP3
Pout
IP3
Pout
Pout (dBm)
Gain
(dB)
IM3
(dBm)
IP3 (dBm)
IM3/Pout
(dBc)
ηadd
(%)
Gain
20
0
-20
-40
-60
-80
Gain
ηadd
0
-20
ηadd
IM3
IM3
IM3/Pout
-40
-60
-80
IM3/Pout
-100
-15
-10
-5
0
5
10
15
20
25
-100
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Device: P0120004P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=400mA
Source Matching: Mag 0.65 Ang -156.0°
Load Matching: Mag 0.67 Ang -140.8°
Device: P0120004P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias:Vds=6V, Ids=350mA
Source Matching: Mag 0.65 Ang -156.0°
Load Matching: Mag 0.635 Ang -142.2°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=400mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pout
(dBm)
1.5
6.6
11.5
16.6
21.7
26.5
30.8
Pout
(dBm)
2.0
7.1
12.0
17.0
22.1
26.9
31.0
Gain
(dB)
11.5
11.6
11.5
11.6
11.7
11.5
10.8
Gain
(dB)
12.0
12.1
12.0
12.0
12.1
11.9
11.0
IM3
(dBm)
-73.3
-67.2
-56.3
-40.6
-21.6
2.2
17.3
IM3
(dBm)
-72.5
-65.7
-53.3
-38.5
-18.3
4.1
17.8
IM3/Pout
(dBc)
-74.8
-73.8
-67.8
-57.2
-43.3
-24.3
-13.5
IM3/Pout
(dBc)
-74.5
-72.8
-65.3
-55.5
-40.3
-22.8
-13.2
IP3
(dBm)
38.9
43.6
45.2
45.1
43.2
38.0
34.7
IP3
(dBm)
39.0
43.5
44.5
44.7
42.1
37.5
34.7
Id
(mA)
406.0
402.8
396.6
384.9
367.0
381.9
455.0
Id
(mA)
356.6
353.3
346.9
336.4
319.2
339.5
412.1
ηadd
(%)
0.1
0.2
0.6
1.8
6.3
18.2
40.3
ηadd
(%)
0.1
0.2
0.7
2.3
7.9
22.4
46.8
Id=350mA
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-4-
P0120004P
1.5W GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V, Ids=400mA, Pin=5d Bm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
: 0.48∠ 172.8
Source : 0.81∠ -152.1
Pout max : 17.5d Bm
+j50
+j25
+j100
+j25
Technical Note
SUMITOMO ELECTRIC
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP 3
: 0.69∠ -141.8
Source : 0.77∠ -155.2
IP3 max : 45.6d Bm
+j50
+j100
16.25
17.5
25
Ω
50
Ω
100
Ω
43.1
45.6
25
Ω
50
Ω
100
Ω
-j25
-j50
-j100
-j25
-j50
-j100
Tc=25°C, Vds=6V, Ids=350mA, Pin=5d Bm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
: 0.50∠ 177.2
Source : 0.81∠ -152.1
Pout max : 17.95dBm
+j50
+j25
+j100
+j25
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP 3
: 0.66∠ -142.0
Source : 0.77∠ -155.2
IP3 max : 43.9d Bm
+j50
+j100
16.7
17.95
25
Ω
50
Ω
100
Ω
25
Ω
43.9
50
Ω
100
Ω
-j25
-j50
-j100
-j25
41.4
-j100
-j50
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
