1M X 16 bit X 4 banks low power synchronous dram
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | AMICC [AMIC TECHNOLOGY] |
| 包装说明 | VFBGA, BGA54,9X9,32 |
| Reach Compliance Code | unknown |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 7 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 105 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 1,2,4,8 |
| JESD-30 代码 | S-PBGA-B54 |
| 长度 | 8 mm |
| 内存密度 | 67108864 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 54 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 4MX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | VFBGA |
| 封装等效代码 | BGA54,9X9,32 |
| 封装形状 | SQUARE |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 电源 | 1.8 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 座面最大高度 | 1 mm |
| 自我刷新 | YES |
| 连续突发长度 | 1,2,4,8,FP |
| 最大待机电流 | 0.0003 A |
| 最大压摆率 | 0.05 mA |
| 最大供电电压 (Vsup) | 2 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 宽度 | 8 mm |

| A43E26161G-95UF | A43E26161V-95UF | A43E26161V-95U | A43E26161 | A43E26161V-95 | A43E26161G-95 | A43E26161G-95U | |
|---|---|---|---|---|---|---|---|
| 描述 | 1M X 16 bit X 4 banks low power synchronous dram | 1M X 16 bit X 4 banks low power synchronous dram | 1M X 16 bit X 4 banks low power synchronous dram | 1M X 16 bit X 4 banks low power synchronous dram | 1M X 16 bit X 4 banks low power synchronous dram | 1M X 16 bit X 4 banks low power synchronous dram | 1M X 16 bit X 4 banks low power synchronous dram |
| 是否Rohs认证 | 符合 | 符合 | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | AMICC [AMIC TECHNOLOGY] | AMICC [AMIC TECHNOLOGY] | AMICC [AMIC TECHNOLOGY] | - | AMICC [AMIC TECHNOLOGY] | AMICC [AMIC TECHNOLOGY] | AMICC [AMIC TECHNOLOGY] |
| 包装说明 | VFBGA, BGA54,9X9,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | - | TSOP2, TSOP54,.46,32 | VFBGA, BGA54,9X9,32 | VFBGA, BGA54,9X9,32 |
| Reach Compliance Code | unknown | unknown | unknown | - | unknown | unknown | unknown |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | - | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 7 ns | 7 ns | 7 ns | - | 7 ns | 7 ns | 7 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 105 MHz | 105 MHz | 105 MHz | - | 105 MHz | 105 MHz | 105 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | - | COMMON | COMMON | COMMON |
| 交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | - | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 代码 | S-PBGA-B54 | R-PDSO-G54 | R-PDSO-G54 | - | R-PDSO-G54 | S-PBGA-B54 | S-PBGA-B54 |
| 长度 | 8 mm | 22.22 mm | 22.22 mm | - | 22.22 mm | 8 mm | 8 mm |
| 内存密度 | 67108864 bit | 67108864 bit | 67108864 bit | - | 67108864 bit | 67108864 bit | 67108864 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | - | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 16 | 16 | 16 | - | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | - | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 54 | 54 | 54 | - | 54 | 54 | 54 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | - | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | - | 4000000 | 4000000 | 4000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | - | 70 °C | 70 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | - | - | - | -40 °C |
| 组织 | 4MX16 | 4MX16 | 4MX16 | - | 4MX16 | 4MX16 | 4MX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | TSOP2 | TSOP2 | - | TSOP2 | VFBGA | VFBGA |
| 封装等效代码 | BGA54,9X9,32 | TSOP54,.46,32 | TSOP54,.46,32 | - | TSOP54,.46,32 | BGA54,9X9,32 | BGA54,9X9,32 |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | - | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 电源 | 1.8 V | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | - | 4096 | 4096 | 4096 |
| 座面最大高度 | 1 mm | 1.2 mm | 1.2 mm | - | 1.2 mm | 1 mm | 1 mm |
| 自我刷新 | YES | YES | YES | - | YES | YES | YES |
| 连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | - | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| 最大待机电流 | 0.0003 A | 0.0003 A | 0.0003 A | - | 0.0003 A | 0.0003 A | 0.0003 A |
| 最大压摆率 | 0.05 mA | 0.05 mA | 0.05 mA | - | 0.05 mA | 0.05 mA | 0.05 mA |
| 最大供电电压 (Vsup) | 2 V | 2 V | 1.95 V | - | 1.95 V | 1.95 V | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | - | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | - | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | - | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | - | COMMERCIAL | COMMERCIAL | INDUSTRIAL |
| 端子形式 | BALL | GULL WING | GULL WING | - | GULL WING | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | DUAL | DUAL | - | DUAL | BOTTOM | BOTTOM |
| 宽度 | 8 mm | 10.16 mm | 10.16 mm | - | 10.16 mm | 8 mm | 8 mm |
| JESD-609代码 | - | - | e0 | - | e0 | e0 | e0 |
| 端子面层 | - | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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