Datasheet> 器件分类 > 分立半导体> 晶体管> RN2209

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RN2209: 产品描述TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process); 产品类别分立半导体晶体管; 文件大小161KB，共5页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2209概述

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2209规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	IN-LINE, R-PSIP-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PSIP-T3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.3 W
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz

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RN2207~RN2209

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2207,RN2208,RN2209

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1207~RN1209

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2207

RN2208

RN2209

R1 (kΩ)

R2 (kΩ)

JEDEC

EIAJ

TOSHIBA

Weight: 0.13g

―

2-4E1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2207

Emitter-base voltage

RN2208

RN2209

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

300

150

−55~150

°C

Unit

2001-06-07

RN2207~RN2209

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

2001-06-07

RN2209相似产品对比

	RN2209	RN2207	RN2208
描述	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	80	80
JESD-30 代码	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
JESD-609代码	e0	e0	e0
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	PNP	PNP	PNP
最大功率耗散 (Abs)	0.3 W	0.3 W	0.3 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子面层	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz

RN2209

RN2209概述

RN2209规格参数

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RN2209相似产品对比

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