INTEGRATED CIRCUITS
74LV03
Quad 2-input NAND gate
Product data
Supersedes data of 1998 Apr 20
2003 Mar 03
Philips
Semiconductors
Philips Semiconductors
Product data
Quad 2-input NAND gate
74LV03
FEATURES
•
Wide operating voltage: 1.0 V to 5.5 V
•
Optimized for Low Voltage applications: 1.0 V to 3.6 V
•
Accepts TTL input levels between V
CC
= 2.7 V and V
CC
= 3.6 V
•
Typical V
OLP
(output ground bounce) < 0.8 V @ V
CC
= 3.3 V,
•
Typical V
OHV
(output V
OH
undershoot) > 2 V @ V
CC
= 3.3 V,
•
Level shifter capability
•
Output capability: standard
•
I
CC
category: SSI
T
amb
= 25
°C
T
amb
= 25
°C
DESCRIPTION
The 74LV03 is a low-voltage Si-gate CMOS device and is pin and
function compatible with 74HC/HCT03.
The 74LV03 provides the 2-input NAND function.
The 74LV03 has open-drain N-transistor outputs, which are not
clamped by a diode connected to V
CC
. In the OFF-state, i.e., when
one input is LOW, the output may be pulled to any voltage between
GND and V
Omax
. This allows the device to be used as a
LOW-to-HIGH or HIGH-to-LOW level shifter. For digital operation
and OR-tied output applications, these devices must have a pull-up
resistor to establish a logic HIGH level.
(open drain)
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
=t
f
≤
2.5 ns
SYMBOL
t
PZL
/t
PLZ
C
I
C
PD
PARAMETER
Propagation delay
nA, nB to nY
Input capacitance
Power dissipation capacitance per gate
Notes 1, 2
CONDITIONS
C
L
= 15 pF
V
CC
= 3.3 V
TYPICAL
8
3.5
4
UNIT
ns
pF
pF
NOTES:
1 C
PD
is used to determine the dynamic power dissipation (P
D
in
µW)
P
D
= C
PD
×
V
CC2
×
f
i
×
N +Σ (C
L
×
V
CC2
×
f
o
) where:
N = the number of outputs switching;
f
i
= input frequency in MHz; C
L
= output load capacitance in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
Σ
(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2 The condition is V
I
= GND to V
CC
3 The given value of C
PD
is obtained with : C
L
= 0 pF and R
L
=
∞
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
TEMPERATURE RANGE
–40
°C
to +125
°C
ORDER CODE
74LV03D
PKG. DWG. #
SOT108-1
PIN CONFIGURATION
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
Data inputs
Data inputs
Data outputs
Ground (0 V)
Positive supply voltage
FUNCTION
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
4B
4A
4Y
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
14
3B
3A
3Y
SV00354
2003 Mar 03
2
Philips Semiconductors
Product data
Quad 2-input NAND gate
74LV03
LOGIC SYMBOL
LOGIC SYMBOL (IEEE/IEC)
1
2
1A
1Y
1B
3
1
2
&
3
4
5
2A
2Y
2B
6
4
5
&
6
9
10
3A
3Y
3B
8
9
10
&
8
12
13
4A
4Y
4B
11
12
13
&
11
SV00355
SV00356
LOGIC DIAGRAM
Y
FUNCTION TABLE
INPUTS
nA
L
nB
L
H
L
H
OUTPUT
nY
Z
Z
Z
L
A
L
H
H
GND
B
NOTES:
H = HIGH voltage level
L = LOW voltage level
Z = High impedance OFF-state
SV00357
70
2003 Mar 03
3
Philips Semiconductors
Product data
Quad 2-input NAND gate
74LV03
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
Input voltage
Output voltage
Operating ambient temperature range in free air
See DC and AC characteristics
V
CC
= 1.0 V to 2.0 V
t
r
, t
f
Input rise and fall times
V
CC
= 2.0 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 3.6 V to 5.5 V
CONDITIONS
See Note1
MIN
1.0
0
0
–40
–40
–
–
–
–
–
–
–
–
TYP.
3.3
–
–
MAX
5.5
V
CC
V
CC
+85
+125
500
200
100
50
UNIT
V
V
V
°C
ns/V
NOTES:
1 The LV is guaranteed to function down to V
CC
= 1.0 V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2 V to
V
CC
= 5.5 V.
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
±I
IK
±I
OK
±I
O
±I
GND
,
±I
CC
T
stg
P
TOT
PARAMETER
DC supply voltage
DC input diode current
DC output diode current
DC output source or sink current
– standard outputs
DC V
CC
or GND current for types with
–standard outputs
Storage temperature range
Power dissipation per package
–plastic mini-pack (SO)
for temperature range: –40
°C
to +125
°C
above +70
°C
derate linearly with 8 mW/K
V
I
< –0.5 or V
I
> V
CC
+ 0.5 V
V
O
< –0.5 or V
O
> V
CC
+ 0.5 V
–0.5V < V
O
< V
CC
+ 0.5 V
CONDITIONS
RATING
–0.5 to +7.0
20
50
25
50
–65 to +150
500
UNIT
V
mA
mA
mA
mA
°C
mW
NOTES:
1 Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2 The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2003 Mar 03
4
Philips Semiconductors
Product data
Quad 2-input NAND gate
74LV03
DC CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0 V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
V
CC
= 1.2 V
V
IH
HIGH level Input
voltage
V
CC
= 2.0 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
CC
= 1.2 V
V
IL
LOW level Input
voltage
V
CC
= 2.0 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
–I
O
= 100
µA
V
OH
HIGH level output
voltage all outputs
out uts
voltage;
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100
µA
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
–I
O
= 100
µA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100
µA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
–I
O
= 100
µA
V
OH
HIGH level output
voltage;
g
STANDARD
outputs
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 6 mA
V
CC
= 4.5 V;V
I
= V
IH
or V
IL;
–I
O
= 12 mA
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100
µA
V
OL
LOW level output
voltage
out uts
voltage; all outputs
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
µA
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100
µA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
µA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 100
µA
V
OL
LOW level output
voltage;
g
STANDARD
outputs
HIGH level output
leakage current
HIGH level output
leakage current
Input leakage
current
Quiescent supply
current; SSI
Additional
quiescent supply
current per input
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 6 mA
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 12 mA
V
CC
= 2.0 V to 3.6 V; V
I
= V
IL;
V
O
= V
CC
or GND
V
CC
= 2.0 V to 3.6 V; V
I
= V
IL;
V
O
= 6.0 V
2
V
CC
= 5.5 V; V
I
= V
CC
or GND
V
CC
= 5.5 V; V
I
= V
CC
or GND; I
O
= 0
V
CC
= 2.7 V to 3.6 V; V
I
= V
CC
– 0.6 V
1.8
2.5
2.8
4.3
2.40
3.60
1.2
2.0
2.7
3.0
4.5
2.82
4.20
0
0
0
0
0
0.25
0.35
0.2
0.2
0.2
0.2
0.40
0.55
5.0
10
1.0
20.0
500
0.2
0.2
0.2
0.2
0.50
V
0.65
10
20
1.0
40
850
µA
µA
µA
µA
µA
V
1.8
2.5
2.8
4.3
2.20
V
3.50
V
0.9
1.4
2.0
0.7*V
CC
0.3
0.6
0.8
0.3*V
CC
–40°C to +85°C
TYP
1
MAX
–40°C to +125°C
MIN
0.9
1.4
2.0
0.7*V
CC
0.3
0.6
0.8
0.3*V
CC
V
V
MAX
UNIT
I
OZ
I
OZ
I
I
I
CC
∆I
CC
NOTES:
1 All typical values are measured at T
amb
= 25
°C.
2 The maximum operating output voltage (V
O(max)
) is 6.0 V.
2003 Mar 03
5
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