电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

3.0SMCJ180A-T3-LF

产品描述Trans Voltage Suppressor Diode, 3000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
产品类别分立半导体    二极管   
文件大小70KB,共5页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
标准
下载文档 详细参数 全文预览

3.0SMCJ180A-T3-LF概述

Trans Voltage Suppressor Diode, 3000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

3.0SMCJ180A-T3-LF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码DO-214AB
包装说明R-PDSO-C2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压230.4 V
最小击穿电压198 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散3000 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大重复峰值反向电压180 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

下载PDF文档
WTE
POWER SEMICONDUCTORS
3.0SMCJ180 – 3.0SMCJ220CA
Pb
3000W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
3000W Peak Pulse Power Dissipation
B
180V – 220V Standoff Voltage
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
A
Fast Response Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G

E
SMC/DO-214AB
Dim
Min
Max
5.59
6.22
A
6.60
7.11
B
2.75
3.25
C
0.152
0.305
D
7.75
8.13
E
2.00
2.62
F
0.051
0.203
G
0.76
1.27
H
All Dimensions in mm
“C” Suffix Designates Bi-directional Devices
“A” Suffix Designates 5% Tolerance Devices
No Suffix Designates 10% Tolerance Devices
D
Mechanical Data
!
!
!
!
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band Except Bi-Directional
Marking: Device Code
Weight: 0.21 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 5
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3
Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method) (Note 2, 3)
Operating and Storage Temperature Range
@T
A
=25°C unless otherwise specified
Symbol
P
PPM
I
PPM
I
FSM
T
j
, T
STG
Value
3000 Minimum
See Table 1
100
-55 to +150
Unit
W
A
A
°C
Note: 1. Non-repetitive current pulse per Figure 4 and derated above T
A
= 25°C per Figure 1.
2. Mounted on 8.0mm
2
copper pad to each terminal.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
3.0SMCJ180 – 3.0SMCJ220CA
1 of 5
© 2006 Won-Top Electronics

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2377  482  2832  2343  327  48  10  58  7  50 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved