Freescale Semiconductor
Technical Data
Document Number: MRF8P20165WH
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 550 mA, V
GSB
= 1.3 Vdc, P
out
= 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
1930 MHz
1960 MHz
1995 MHz
G
ps
(dB)
16.1
16.3
16.3
η
D
(%)
47.0
47.7
46.0
Output PAR
(dB)
7.1
7.1
7.0
ACPR
(dBc)
--27.7
--29.7
--33.3
MRF8P20165WHR3
MRF8P20165WHSR3
1930-
-1995 MHz, 37 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
190 Watts
(1)
Features
•
Designed for Wide Instantaneous Bandwidth Applications. VBW
res
≃
100 MHz.
•
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2)
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8P20165WHR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8P20165WHSR3
RF
inA
/V
GSA
3
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
(Top View)
RF
inB
/V
GSB
4
1 RF
outA
/V
DSA
2 RF
outB
/V
DSB
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 37 W CW, 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.3 Vdc, 1960 MHz
Case Temperature 114°C, 160 W CW, 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.3 Vdc, 1960 MHz
Symbol
R
θJC
Value
(3)
0.79
0.53
Unit
°C/W
1. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P20165WHR3 MRF8P20165WHSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
B (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(2)
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 232
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 550 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2.0
0.05
1.8
2.7
0.2
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3,4)
(In Freescale Doherty Production Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.3 Vdc,
P
out
= 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
14.2
40.6
5.2
—
14.8
44.3
5.8
--31.0
17.2
—
—
--28.7
dB
%
dB
dBc
Typical Broadband Performance
(4)
—
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 550 mA,
V
GSB
= 1.3 Vdc, P
out
= 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
1930 MHz
1960 MHz
1995 MHz
1.
2.
3.
4.
Side A and Side B are tied together for this measurement.
V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
G
ps
(dB)
16.1
16.3
16.3
η
D
(%)
47.0
47.7
46.0
Output PAR
(dB)
7.1
7.1
7.0
ACPR
(dBc)
--27.7
--29.7
--33.3
(continued)
MRF8P20165WHR3 MRF8P20165WHSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 550 mA,
V
GSB
= 1.3 Vdc, 1930--1995 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(2)
IMD Symmetry @ 74 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 65 MHz Bandwidth @ P
out
= 37 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
P1dB
P3dB
IMD
sym
—
—
—
104
190
20
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
100
0.2
0.017
0.01
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
3
V
GGA
C8
C10
R2
C1
C3
Z1
C6
C22
C24
C18
C14
CUT OUT AREA
C
C15
C16
P
C12
C30
V
DDA
C28
R1
C13
C4
C2
R3
C11
C9
V
GGB
C7
C19
C25
C29
V
DDB
C26 C27
MRF8P20165W
Rev. 1
C23
Note 1: Component numbers C5, C17, C20 and C21 are not used.
Note 2: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Figure 2. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Layout
Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values
Part
C1, C2, C6, C7, C12, C13
C3, C4
C8, C9, C24, C25
C10, C11
C14
C15, C16
C18, C19
C22, C23
C26, C27
C28, C29
C30
R1
R2, R3
Z1
PCB
Description
15 pF Chip Capacitors
1.8 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
22
μF,
35 V Tantalum Capacitors
0.3 pF Chip Capacitor
1.0 pF Chip Capacitors
2.0 pF Chip Capacitors
18 pF Chip Capacitors
0.1 pF Chip Capacitors
220
μF,
50 V Electrolytic Capacitors
0.8 pF Chip Capacitor
50
Ω,
4 W Chip Resistor
2.37
Ω,
1/4 W Chip Resistors
1750 MHz Band 90°, 3 dB Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
ATC600F150JT250XT
ATC600F1R8BT250XT
GRM55DR61H106KA88L
T491X226K035AT
ATC600F0R3BT250XT
ATC600F1R0BT250XT
ATC600F2R0BT250XT
ATC600F180JT250XT
ATC600F0R1BT250XT
227CKS050M
ATC600F0R8BT250XT
CW12010T0050GBK
CRCW12062R37FNEA
GSC351--HYB1900
RO4350B
Manufacturer
ATC
ATC
Murata
Kemet
ATC
ATC
ATC
ATC
ATC
Illinois Capacitor
ATC
ATC
Vishay
Soshin
Rogers
MRF8P20165WHR3 MRF8P20165WHSR3
4
RF Device Data
Freescale Semiconductor
V
GGA
C7
R1
C21
C19
C10
C9
C1
C11 C
C13
C15
C16
R2
C20
C22
C24
C12
C17
C23
C25
V
DDA
C5
C3
Z1
R3
C4
C6
C2
C27
C29
C30
C28
P C14 C18
V
GGB
C8
C26
V
DDB
MRF8P20165W
Rev. 0
Note: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout
Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values
Part
C1
C2
C3, C4, C5, C6, C21, C22
C29, C30
C7, C8, C23, C24
C9, C11, C13, C15
C10, C12, C14, C16, C17
C18, C28
C19, C20
C25, C26
C27
R1, R2
R3
Z1
PCB
Description
1.6 pF Chip Capacitor
1.8 pF Chip Capacitor
10 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
2.7 pF Chip Capacitors
1 pF Chip Capacitors
0.6 pF Chip Capacitors
1.5 pF Chip Capacitors
330
μF,
35 V Electrolytic Capacitors
0.5 pF Chip Capacitor
2.37
Ω,
1/4 W Chip Resistors
51
Ω,
1/4 W Chip Resistor
1900 MHz Band 90°, 3 dB Hybrid Coupler
0.030″,
ε
r
= 3.48
Part Number
ATC600S1R6BT250XT
ATC600S1R8BT250XT
ATC600S100JT250XT
GRM55DR61H106KA88L
ATC600S2R7BT250XT
ATC600S1R0BT250XT
ATC600S0R6BT250XT
ATC600S1R5BT250XT
MCGPR35V337M10X16--RH
ATC600S0R5BT250XT
CRCW12062R37FNEA
CRCW120651R0FKEA
GSC351--HYB1900
RO4350
Manufacturer
ATC
ATC
ATC
Murata
ATC
ATC
ATC
ATC
Multicomp
ATC
Vishay
Vishay
Soshin
Rogers
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
5
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