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5962-0622902VXC: 产品描述Standard SRAM, 512KX32, 20ns, CMOS, CQFP68; 产品类别存储存储; 文件大小368KB，共16页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com

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5962-0622902VXC概述

Standard SRAM, 512KX32, 20ns, CMOS, CQFP68

5962-0622902VXC规格参数

参数名称	属性值
厂商名称	Microchip(微芯科技)
包装说明	QFF,
Reach Compliance Code	compliant
ECCN代码	3A001.A.2.C
最长访问时间	20 ns
其他特性	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO
JESD-30 代码	S-CQFP-F68
JESD-609代码	e4
长度	24.14 mm
内存密度	16777216 bit
内存集成电路类型	STANDARD SRAM
内存宽度	32
功能数量	1
端子数量	68
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	512KX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QFF
封装形状	SQUARE
封装形式	FLATPACK
并行/串行	PARALLEL
认证状态	Qualified
筛选级别	MIL-PRF-38535 Class V
座面最大高度	4.7 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	FLAT
端子节距	1.27 mm
端子位置	QUAD
宽度	24.14 mm
Base Number Matches	1

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Features

•

16 Mbit SRAM Multi Chip Module

Allows 32-, 16- or 8-bit access configuration

Operating Voltage: 3.3V

0.3V

Access Time

– 20 ns, 18 ns for AT68166F

Power Consumption

– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns

(1)

– Standby: 13 mW (Typ)

Military Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Die manufactured on Atmel 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

ESD Better than 4000V

Quality Grades:

– QML-Q or V with SMD 5962-06229

– ESCC

950 Mils Wide MQFPT68 Package

Mass : 8.5 grams

1. Only for AT68166F-18. 450mW for AT68166F-20.

Rad Hard

16 MegaBit 3.3V

SRAM Multi-

Chip Module

AT68166F

Note:

Description

The AT68166F is a 16Mbit SRAM packaged in a hermetic Multi Chip Module

(MCM) for space applications.

The AT68166F MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-

nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It

combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit

Upset immunity and a total dose tolerance of 300Krads, with a fast access time.

The MCM packaging technology allows a reduction of the PCB area by 50% with a

weight savings of 75% compared to four 4Mbit packages.

Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-

date the assembly of the four dice on one side of the package which facilitates the

power dissipation.

The compatibility with other products allows designers to easily migrate to the Atmel

AT68166F memory.

The AT68166F is powered at 3.3V.

The AT68166F is processed according to the test methods of the latest revision of the

MIL-PRF-38535 or the ESCC 9000.

7747C–AERO–06/10

5962-0622902VXC相似产品对比

	5962-0622902VXC	5962-0622902QXC	5962R0622902VXC	5962-0622904QYC	5962-0622904VYC
描述	Standard SRAM, 512KX32, 20ns, CMOS, CQFP68	Standard SRAM, 512KX32, 20ns, CMOS, CQFP68	Standard SRAM, 512KX32, 20ns, CMOS, CQFP68	Standard SRAM, 512KX32, 20ns, CMOS, CQFP68	Standard SRAM, 512KX32, 20ns, CMOS, CQFP68
厂商名称	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)	Microchip(微芯科技)
包装说明	QFF,	QFF,	QFF,	QFF,	0.950 INCH, NCTB, CERAMIC, MQFP-68
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	20 ns	20 ns	20 ns	20 ns	20 ns
JESD-30 代码	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68
长度	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	32	32	32	32	32
功能数量	1	1	1	1	1
端子数量	68	68	68	68	68
字数	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	512KX32	512KX32	512KX32	512KX32	512KX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	QFF	QFF	QFF	QFF	QFF
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Qualified	Qualified	Qualified	Qualified	Qualified
座面最大高度	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD
宽度	24.14 mm	24.14 mm	24.14 mm	24.14 mm	24.14 mm
其他特性	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSO	-	-
JESD-609代码	e4	e4	e4	-	e0
筛选级别	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	-	38535V;38534K;883S
端子面层	GOLD	GOLD	GOLD	-	TIN LEAD
Base Number Matches	1	1	1	1	-

5962-0622902VXC

5962-0622902VXC概述

5962-0622902VXC规格参数

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