This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly
different in format due to electronic conversion processes. Actual technical content will be the same.
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 10 November 1998.
INCH-POUND
MIL-PRF-19500/270G
10 August 1998
SUPERSEDING
MIL-PRF-19500/270F
19 January 1998
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN,
SILICON, TYPES 2N2060 AND 2N2060L
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as
one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-77 or TO-99).
1.3 Maximum ratings.
P
T1
T
A
= +25
q
C
One
section
1/
Both
sections
2/
P
T2
T
C
= +25
q
C
One
section
1/
Both
sections
2/
I
C
V
CBO
V
CEO
V
EBO
T
STG
and T
J
mW
mW
W
W
mA dc
V dc
V dc
V dc
q
C
-65 to +200
540
600
1.5
2.12
500
100
60
7
1/ For T
A
> +25
q
C, derate linearly 3.08 mW/
q
C one section, 3.48 mW/
q
C both sections.
2/ For T
C
> +25
q
C, derate linearly 8.6 mW/
q
C one section, 12.1 mW/
q
C both sections.
1.4 Primary electrical characteristics at T
A
= +25
q
C.
h
FE1
Limit
V
CE
= 5 V dc
I
C
= 10
P
A dc
h
FE2
h
FE3
h
FE4
1/
| h
fe
|
V
CE(sat)
V
BE(sat)
V
CE
= 5 V dc
I
C
= 100
P
A dc
V
CE
= 5 V dc
I
C
= 1 mA dc
V
CE
= 5 V dc
I
C
= 10 mA dc
V
CE
= 10 V dc
I
C
= 50 mA dc
f = 20 MHz
I
C
= 50 mA dc
I
B
= 5 mA dc
I
C
= 50 mA dc
I
B
= 5 mA dc
V dc
Min
25
Max
75
1/ Pulsed (see 4.5.1).0
30
90
40
120
50
150
3
25
0.3
V dc
0.9
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad
Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/270G
Dimensions
Symbol
Inches
Min
CD
CD
1
CH
LC
LC
1
LD
LL
LL
1
LL
2
LU
P
Q
TL
TW
h
r
---
.250
.016
.100
---
.029
.028
.009
---
.335
.305
.150
Max
.370
.335
.260
Millimeters
Min
8.51
7.75
3.81
Max
9.40
8.51
7.60
9
Notes
.200 TP
.140
.016
.160
.021
5.08 TP
3.56
0.41
4.06
0.53
10
See notes 10, 12, and 13
.050
---
.019
---
.050
.045
.034
.041
.010
---
6.35
0.41
2.54
---
0.74
0.71
0.23
---
1.27
---
0.48
---
1.27
1.14
0.86
1.04
0.25
11
9
10
10
10
8
7
5, 6
4, 5
D
45
q
TP
45
q
TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Refer to rules for dimensioning semiconductor product outlines included in Publication No. 95.
4. Lead number 4 and 8 omitted on this variation.
5. Beyond r, TW must be held to a minimum length of .021 inch (.53 mm).
6. TL measured from maximum CD.
7. Details of outline in this zone optional.
8.
9.
CD
1
shall not vary more than .010 inch (.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedure described on gauge drawing GS-1.
LU applies between LL
1
and LL
2
LD applies between LL
2
and LL minimum. Diameter is uncontrolled in LL
1
and beyond
minimum.
r (radius) applies to both inside corners of tab.
For transistor types 2N2060, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.50 mm) maximum.
For transistor types 2N2060L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum.
10.
11.
12.
13.
FIGURE 1. Physical dimensions.
2
MIL-PRF-19500/270G
1.5 Primary electrical matching characteristics of each individual section.
h
FE
2
−
1
h
FE
2
−
2
Limit
1/
| V
BE1
- V
BE2
|
|
'
( V
BE1
- V
BE2
)
'
T
A
|1
|
'
(V
BE1
- V
BE2
)
'
T
A
|2
V
CE
= 5 V dc;
I
C
= 100
P
A dc
1/
V
CE
= 5 V dc;
I
C
= 100
P
A dc
V
CE
= 5 V dc;
I
C
= 100
P
A dc
T
A
= +25
q
C and -55
q
C
V
CE
= 5 V dc;
I
C
= 100
P
A dc
T
A
= +125
q
C and +25
q
C
mV dc
Min
Max
0.9
1.0
---
5
mV dc
---
0.8
mV
---
1.0
1/ The larger number will be placed in the denominator.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.3).
3
MIL-PRF-19500/270G
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500 and as follows.
h
FE
−
1
.............................................Static forward-current-gain-ratio. The matching ratio of the static forward-current transfer ratios
h
FE
−
2
of each section.
|V
BE1
- V
BE2
| .....................................Absolute value of base-emitter-voltage differential between the individual sections.
|
'
( V
BE1
- V
BE2
)
'
T
A
| .......................Absolute value of the algebraic difference between the base-emitter-voltage differentials
between the individual sections at two different temperatures.
3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, MIL-HDBK-6100 and herein.
3.3.1 Lead finish. Lead finish shall be gold, silver, tin, or solder plated. Lead finish shall be solderable as defined in MIL-PRF-19500,
MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition requirements (see 6.2).
3.4 Marking. Devices shall be marked as specified in MIL-PRF-19500.
3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in
1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3).
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4
MIL-PRF-19500/270G
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see
table IV of
MIL-PRF-19500)
3c
9
Measurement
JANS level
Thermal impedance (see 4.3.2)
I
CBO2
,
JANTX and JANTXV levels
Thermal impedance (see 4.3.2)
Not applicable
h
FE
2
−
1
, and h
FE3
h
FE
2
−
2
10
11
48 hours minimum
I
CBO2
,
48 hours minimum
I
CBO2
and h
FE3
h
FE
2
−
1
, and h
FE3
h
FE
2
−
2
I
CBO2
= 100 percent of initial value or
2 nA dc, whichever is greater.
'
h
FE3
=
r
15 percent
12
See 4.3.1
240 hours minimum
Subgroups 2 and 3 of table I herein;
See 4.3.1
80 hours minimum
Subgroup 2 of table I herein;
13
'
I
CBO2
= 100 percent of initial value or
2 nA dc, whichever is greater.
'
I
CBO2
= 100 percent of initial value or
2 nA dc, whichever is greater.
'
h
FE3
=
r
15 percent
13 (a)
MIL-STD-750, method 1016, test condition A
(collector to collector)
R
C1-C2
= 10 ohms minimum.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
9
'
h
FE3
=
r
15 percent
Not applicable
JANS level (all device types) .................. V
CB
= 10 - 40 V dc, P
T
= 300 mW (each section) at T
A
= +25
q
C
r
3
q
C.
V
CB
= 10 - 40 V dc, P
T
= 600 mW (both sections) at T
A
= +25
q
C
r
3
q
C.
JANTX and JANTXV levels
(all device types)...................................... V
CB
= 10 - 40 V dc, P
T
= 300 mW (each section) at T
A
= +25
q
C
r
3
q
C.
V
CB
= 10 - 40 V dc, P
T
= 600 mW (both sections) at T
A
= +25
q
C
r
3
q
C.
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.3.2 Thermal impedance (Z
6
JX
measurements). The Z
6
JX
measurements shall be performed in accordance with MIL-STD-750,
Method 3131.
a. I
M
measurement current ---------------------- 5 mA.
b. I
H
forward heating current ------------------- 200 mA (min).
c. t
H
heating time --------------------------------- 25 - 30 ms.
d. t
md
measurement delay time ---------------- 60
P
s max.
e. V
CE
collector-emitter voltage --------------- 10 V dc minimum
The maximum limit for Z
6
JX
under these test conditions are Z
6
JX
(max) = 72
q
C/W.
5
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