Sect. 3.1 data sheets
8/7/00
11:52 AM
Page 107
OM6056SB OM6058SB OM6060SB
Preliminary Data Sheet
OM6057SB OM6059SB OM6061SB
POWER MOSFETS IN A HERMETIC ISOLATED
POWER BLOCK PACKAGE
High Current, High Voltage 100V Thru 1000V,
Up To 190 Amp N-Channel, Size 7 MOSFETs
FEATURES
•
•
•
•
•
•
•
Size 7 Die, High Energy
Rugged Package Design
Solder Terminals
Very Low R
DS(on)
Fast Switching, Low Drive Current
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
technology combined with a package designed specifically for high efficiency, high current
applications. They are ideally suited for Hi-Rel requirements where small size, high
performance and high reliability are required, and in applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
@ 25°C
PART NUMBER
OM6056SB
OM6057SB
OM6058SB
OM6059SB
OM6060SB
OM6061SB
PIN CONNECTION
AND SCHEMATIC
V
DS
100 V
200 V
500 V
600 V
800 V
1000 V
R
DS(on)
.008
Ω
.018
Ω
.095
Ω
.140
Ω
.300
Ω
.500
Ω
I
D
(Continuous)
190 A
105 A
58 A
48 A
34 A
18 A
3.1
MECHANICAL OUTLINE
4 11 R0
3.1 - 107
Sect. 3.1 data sheets
8/7/00
11:52 AM
Page 108
OM6056SB - OM6061SB
ABSOLUTE MAXIMUM RATINGS
(T
Parameter
Drain Source Voltage
Drain Gate Voltage (R
GS
= 1.0 MΩ)
Continuous Drain Current @ T
C
= 25°C 2
Continuous Drain Current @ TC = 100°C 2
Pulsed Drain Current1
Max. Power Dissipation @ T
C
= 25°C
Max. Power Dissipation @ T
C
= 100°C
Linear Derating Factor Junction-to-Case
Linear Derating Factor Junction-to-Ambient
Operating and Storage Temp. Range
T
J
, T
stg
Symbol
V
DS
V
DGR
I
D
I
D
I
DM
P
D
P
D
C
= 25°C unless otherwise noted)
Unit
V
V
A
A
A
W
W
W/°C
W/°C
°C
°C
OM6056SB OM6057SB OM6058SB OM6059SB OM6060SB OM6061SB
100
100
190
82
440
200
200
105
44
250
500
500
58
25
130
570
245
4.35
.033
-55 to +150
230
2. Package Pin Limitation:
100 Amps @ 125°C.
600
600
48
19
110
800
800
34
15
78
1000
1000
18
7.5
42
Lead Temperature (1/16" from case for 10 sec.)
Notes: 1. Pulse Test:
Pulse Width
≤
300
µsec,
Duty Cycle
≤
2%.
THERMAL RESISTANCE (MAXIMUM)
Junction-to-Case
Junction-to-Ambient (Free Air Operation)
@ T
A
= 25°C
.23
30
° C/W
° C/W
R
thJC
R
thJA
PRELIMINARY ELECTRICAL CHARACTERISTICS
Characteristic
Gate Threshold Voltage
Gate-Source Leakage Current
Off State Drain-Source Leakage
Test Condition
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20 V
DC
V
DS
= V
DSS
x 0.8
V
GS
= 0V
T
C
= 25°C
T
C
= 125°C
Symbol
V
GS(th)
I
GSS
I
DSS
I
DSS
(T
C
= 25°C unless otherwise noted)
Min.
2.0
Max.
4.0
±100
10
.10
100
200
500
600
800
1000
.008
.018
.095
.140
.300
.500
Ω
V
Units
V
nA
µA
mA
Part No.
All
All
All
All
OM6056SB
OM6057SB
3.1
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 µA
V
DSS
OM6058SB
OM6059SB
OM6060SB
OM6061SB
OM6056SB
OM6057SB
Static Drain-Source On-Resistance
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6058SB
OM6059SB
OM6060SB
OM6061SB
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
