Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
TYPE
NUMBER
BC849BW
BC849CW
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING
CODE
(1)
2B∗
2C∗
TYPE
NUMBER
BC850BW
BC850CW
MARKING
CODE
(1)
2F∗
2G∗
handbook, halfpage
BC849W; BC850W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
Top view
2
MAM062
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC849W
BC850W
V
CEO
collector-emitter voltage
BC849W
BC850W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
30
45
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
30
50
V
V
MIN.
MAX.
UNIT
1999 Apr 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC849BW; BC850BW
BC849CW; BC850CW
V
CEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V; see Figs 2 and 3
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC849W; BC850W
VALUE
625
UNIT
K/W
MIN.
−
−
−
200
420
−
−
580
−
−
−
100
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
11
−
−
−
MAX.
15
5
100
450
800
250
600
700
770
3
−
−
4
4
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
dB
1999 Apr 12
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
handbook, full pagewidth
300
MBH724
hFE
VCE = 5 V
200
100
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
BC849BW; BC850BW.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
MBH725
VCE = 5 V
hFE
400
200
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
BC849CW; BC850CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
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