OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low R
DS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Packages
Ultra Low R
DS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
V
DS
(V)
100
100
100
60
60
50
50
R
DS(on)
( )
.025
.030
.035
.016
.018
.016
.018
I
D
(A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
3.1
SCHEMATIC
Drain
PIN CONNECTION
TO-254AA
TO-258AA
Gate
Source
1
Pin 1:
Pin 2:
Pin 3:
2 3
Drain
Source
Gate
1
Pin 1:
Pin 2:
Pin 3:
2
3
Drain
Source
Gate
4 11 R1
Supersedes 2 07 R0
3.1 - 47
OM55N10SA - OM75N06SC
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction-To-Case
T
J
T
stg
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating and
-55 to 150
Storage Temperature Range
300
300
300
300
°C
-55 to 150
-55 to 150 -55 to 150
°C
60N10SC
100
100
60
37
180
130
55
1.00
55N10SA
55N10SC
100
100
55
33
180
125
50
1.00
75N06SA
75N06SC
60
60
75
45
225
125
50
1.00
75N05SA
75N05SC
50
50
75
45
225
125
50
1.00
Units
V
V
A
A
A
W
W
W/°C
Lead Temperature (1/16" from case for 10 secs.)
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited:
SA I
D
= 25A & SC I
D
= 35A @ 25°C
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.0
°C/W
PACKAGE LIMITATIONS
Parameters
I
D
Continuous Drain Current
Linear Derating Factor, Junction-to-Ambient
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
TO254AA
25
.020
50
TO-258AA
35
.025
40
Unit
A
W/°C
°C/W
MECHANICAL OUTLINE
3.1
.165
.155
.695
.685
.270
.240
.045
.035
.685
.665
.800
.790
.144 DIA.
.545
.535
.050
.040
.835
.815
.707
.697
.550
.530
.550
.530
.092 MAX.
.750
.500
.065
.055
.140 TYP.
.005
.045
.035
.150 TYP.
.260
.249
.550
.510
.005
.200 TYP.
.150 TYP.
TO-258AA
PACKAGE OPTIONS
TO-254AA
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
3.1 - 48
OM60N10SC
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
60
A
(repetitive or
non-repetitive,T
J
= 25°C)
720 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
37
A
(repetitive or
non-repetitive, T
J
= 100°C)
100
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
OM55N10SC
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
600 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
37
A
(repetitive or
non-repetitive, T
J
= 100°C)
100
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
0.025
0.05
V
60
25
4000
1100
250
90
270
270
120
200
210
410
60
240
1.6
180
1.8
10
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 80 V, I
D
= 30 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
0.03
0.06
V
55
25
4000
1100
250
90
270
270
120
200
210
410
55
220
1.5
180
1.8
11
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
3.1 - 49
I
SD
= 60 A, V
GS
= 0
I
SD
= 60 A, di/dt = 100 A/µs
V
R
= 80 V
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 80 V, I
D
= 30 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
OM55N10SA - OM75N06SC
I
SD
= 55 A, V
GS
= 0
I
SD
= 55 A, di/dt = 100 A/µs
V
R
= 80 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
3.1
3.1
OM55N10SA - OM75N06SC
OM55N10SA
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
600 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
100 mJ (pulse width limited
by T
j max
,
d<
1%)
37
A
(repetitive or
non-repetitive, T
J
= 100°C)
100
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
OM75N06SC
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,T
J
= 25°C)
900 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
200 mJ (pulse width limited
by T
j max
,
d<
1%)
40
A
(repetitive or
non-repetitive, T
J
= 100°C)
60
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
0.035
0.070
V
55
25
4000
1100
250
90
270
270
120
200
210
410
55
180
1.5
180
1.8
11
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 80 V, I
D
= 30 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 80 V, I
D
= 30 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 80 V, I
D
= 30 A
R
G
= 50 , V
GS
= 10 V
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
0.016
0.032
V
75
25
4100
1800
420
190
900
150
130
360
280
600
75
300
1.5
120
0.45
6.5
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
3.1 - 50
I
SD
= 55 A, V
GS
= 0
I
SD
= 55 A, di/dt = 100 A/µs
V
R
= 80 V
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 25 V, I
D
= 40 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 25 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 25 V, I
D
= 40 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 75 A
R
G
= 50 , V
GS
= 10 V
I
SD
= 75 A, V
GS
= 0
I
SD
= 75 A, di/dt = 100 A/µs
V
R
= 25 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM75N06SA
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,T
J
= 25°C)
900 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
200 mJ (pulse width limited
by T
j max
,
d<
1%)
40
A
(repetitive or
non-repetitive, T
J
= 100°C)
60
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
OM75N05SC
(T
C
= 25°C unless otherwise specified)
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,T
J
= 25°C)
900 mJ (starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
200 mJ (pulse width limited
by T
j max
,
d<
1%)
40
A
(repetitive or
non-repetitive, T
J
= 100°C)
50
250
1000
±100
V
µA
µA
nA
I
D
= 250 µA, V
GS
= 0
V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
GS
= ±20 V
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Avalanche Characteristics
Avalanche Current
I
AR
E
AS
E
AR
I
AR
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
0.018
0.036
V
75
25
4100
1800
420
190
900
150
130
360
280
600
75
300
1.5
120
0.45
6.5
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 25 V, I
D
= 40 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 25 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 25 V, I
D
= 40 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 40 V, I
D
= 75 A
R
G
= 50 , V
GS
= 10 V
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
Breakdown Voltage
Zero Gate Voltage
I
DSS
Drain Current (V
GS
= 0)
Gate-Body Leakage
I
GSS
Current (V
DS
= 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
V
GS(th)
R
DS(on)
Static Drain-Source On
Resistance
On State Drain Current
I
D(on)
Electrical Characteristics - Dynamic
Forward Transconductance
g
fs
Input Capacitance
C
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
Electrical Characteristics - Switching On
Turn-On Time
T
d(on)
Rise Time
t
r
(di/dt)
on
Turn-On Current Slope
2
4
0.016
0.032
V
75
25
4100
1800
420
190
900
150
130
360
280
600
75
300
1.5
120
0.45
6.5
A
S
pF
pF
pF
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
T
C
= 100°C
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 40 A
V
DS
= 25 V
V
GS
= 0
f = 1 mHz
3.1 - 51
I
SD
= 75 A, V
GS
= 0
I
SD
= 75 A, di/dt = 100 A/µs
V
R
= 25 V
Total Gate Charge
Q
g
Electrical Characteristics - Switching Off
Off Voltage Rise Time
T
r(Voff)
Fall Time
t
f
Cross-Over Time
t
cross
Electrical Characteristics - Source Drain Diode
Source Drain Current
I
SD
Source Drain Current (pulsed)
I
SDM
*
Forward On Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
I
RRM
Reverse Recovery Charge
Reverse Recovery Current
nS V
DD
= 20 V, I
D
= 40 A
nS R
G
= 50 , V
GS
= 10 V
A/µS V
DD
= 20 V, I
D
= 40 A
R
G
= 50 , V
GS
= 10 V
nC V
DD
= 20 V, I
D
= 40 A, V
GS
= 10 V
nS
nS
nS
A
A
V
nS
µC
A
V
DD
= 35 V, I
D
= 75 A
R
G
= 50 , V
GS
= 10 V
OM55N10SA - OM75N06SC
I
SD
= 75 A, V
GS
= 0
I
SD
= 75 A, di/dt = 100 A/µs
V
R
= 20 V
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
3.1
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
