HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
September 2001
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T
J
= 175
o
C
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
HGTP14N36G3VL
HGT1S14N36G3VL
HGT1S14N36G3VLS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
14N36GVL
14N36GVL
14N36GVL
GATE
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
A
JEDEC TO-263AB
M
A
COLLECTOR
(FLANGE)
A
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE: When ordering, use the entire part number. To obtain the TO-
263AB in tape and reel, drop the S and add the suffix T; i.e.,
HGT1S14N36G3VLT.
The development type number for this device is TA49021.
R
1
GATE
R
2
EMITTER
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 5V, T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . .I
C100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
at L = 2.3mH, T
C
= + 175
o
C . . . . . . . . . . . . . . . . . . . . . . I
SCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if I
GEM
is limited to 10mA.
©2001 Fairchild Semiconductor Corporation
UNITS
V
V
A
A
V
A
A
mJ
W
W/
o
C
o
C
o
C
KV
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
SYMBOL
BV
CER
TEST CONDITIONS
I
C
= 10mA,
V
GE
= 0V
R
GE
= 1kΩ
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= -40
o
C
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 7A,
V
CE
= 12V
I
C
= 7A,
V
CE
= 12V
I
C
= 7A
R
G
= 1000Ω
I
C
= 10mA
V
CE
= 250V
R
GE
= 1kΩ
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +175
o
C
T
C
= +25
o
C
T
C
= +25
o
C
T
C
= +25
o
C
V
GE
=
±10V
I
GES
=
±2mA
I
C
= 7A, R
L
= 28Ω
R
G
= 25Ω, L = 550µH,
V
CL
= 300V, V
GE
= 5V,
T
C
= +175
o
C
L = 2.3mH,
V
G
= 5V,
T
C
= +175
o
C
T
C
= +25
o
C
MIN
320
330
320
-
TYP
355
360
350
2.7
MAX
400
390
385
-
UNITS
V
V
V
V
Gate Charge
Q
G(ON)
-
24
-
nC
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
CE(CL)
350
380
410
V
BV
ECS
I
CER
24
-
-
-
-
-
-
1.3
28
-
-
1.25
1.15
1.6
1.7
1.8
-
25
250
1.45
1.6
2.2
2.9
2.2
V
µA
µA
V
V
V
V
V
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 7A
V
GE
= 4.5V
I
C
= 14A
V
GE
= 5V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
R
1
R
2
I
GES
BV
GES
t
D(OFF)I
+
t
F(OFF)I
-
10
±330
±12
-
75
20
±500
±14
7
-
30
±1000
-
-
Ω
kΩ
µA
V
µs
Inductive Use Test
I
SCIS
12
17
-
-
-
-
-
-
1.5
o
A
A
C/W
Thermal Resistance
R
θ
JC
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATION = 250
µ
s, DUTY CYCLE <0.5%, V
CE
= 10V
25
I
CE
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
10V
30
4.5V
5.0V
PULSE DURATION = 250
µ
s, DUTY CYCLE <0.5%, T
C
= +25
o
C
20
15
20
4.0V
10
+175
o
C
5
-40
o
C
0
1
2
3
4
5
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
+25
o
C
3.5V
10
3.0V
2.5V
0
0
2
4
6
8
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR EMITTER CURRENT (A)
T
C
=
30
25
20
+175
o
C
V
GE
= 5.0V
I
CE
, COLLECTOR EMITTER CURRENT (A)
35
35
V
GE
= 4.5V
30
25
-40
o
C
+25
o
C
+175
o
C
V
GE
= 4.5V
20
15
10
5
0
V
GE
= 4.0V
15
10
5
0
0
4
1
2
3
V
CE(SAT)
, SATURATION VOLTAGE (V)
5
0
1
2
3
4
5
V
CE(SAT)
, SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
1.35
I
CE
= 7A
V
CE(SAT)
, SATURATION VOLTAGE (V)
V
CE(SAT)
, SATURATION VOLTAGE (V)
2.25
I
CE
= 14A
V
GE
= 4.0V
V
GE
= 4.0V
2.00
1.25
V
GE
= 4.5V
1.15
1.75
V
GE
= 4.5V
1.05
-25
V
GE
= 5.0V
+25
+75
+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
1.50
-25
+25
+75
V
GE
= 5.0V
+125
(
o
C)
+175
T
J
, JUNCTION TEMPERATURE
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 5V
V
GE(TH),
NORMALIZED THRESHOLD VOLTAGE
20
18
16
14
12
10
8
6
4
2
0
+25
+50
+75
+125
+100
T
C
, CASE TEMPERATURE (
o
C)
+150
+175
1.2
1.1
1.0
I
CE
= 1ma
0.9
0.8
0.7
0.6
-25
+25
+75
+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
7.0
1E4
V
ECS
= 20V
t
(OFF)I,
TURN OFF TIME (
µ
s)
V
CE
= 300V, V
GE
= 5V
6.5
6.0
5.5
5.0
4.5
4.0
3.5
R
GE
= 25
Ω
, L = 550
µ
H
R
L
= 37
Ω
, I
CE
= 7A
LEAKAGE CURRENT
(µ
A)
1E3
1E2
1E1
V
CES
= 250V
1E0
1E-1
+20
+60
+100
+140
+180
T
J
, JUNCTION TEMPERATURE (
o
C)
3.0
+25
+50
+ 75
+100
+125
+150
(
o
C)
+175
T
J
, JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
(Continued)
25
I
C
, INDUCTIVE SWITCHING CURRENT (A)
+25
o
C
V
GE
= 5V
650
600
550
E
AS
, ENERGY (mJ)
500
450
400
350
300
10
250
200
5
0
2
4
6
8
10
L, INDUCTANCE (mH)
150
0
2
4
6
L , INDUCTANCE (mH)
8
10
+175
o
C
+25
o
C
V
GE
= 5V
20
+175
o
C
15
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
2000
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
OES
C
RES
C
IES
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
REF I
G
= 1mA, R
L
= 1.7
Ω
, T
C
= +25
o
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
12
10
8
6
5
V
GE
, GATE-EMITTER VOLTAGE (V)
V
CE
= 12V
4
3
V
CE
= 4V
6
4
V
CE
= 8V
2
0
0
5
10
15
20
25
30
Q
G
, GATE CHARGE (nC)
2
1
0
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. A1
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