BFN24, BFN26
NPN Silicon High-Voltage Transistors
•
Suitable for video output stages in TV sets
and switching power supplies
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary type: BFN27 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
BFN24
BFN26
Maximum Ratings
Parameter
Collector-emitter voltage
BFN24
BFN26
Collector-base voltage
BFN24
BFN26
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
74 °C
Junction temperature
Storage temperature
1
Pb-containing
Marking
FHs
FJs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
Package
SOT23
SOT23
Symbol
V
CEO
Value
250
300
Unit
V
V
CBO
250
300
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
6
200
500
100
200
360
150
-65 ... 150
mW
°C
mA
package may be available upon special request
1
2007-04-20
BFN24, BFN26
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
210
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 1 mA,
I
B
= 0 , BFN24
I
C
= 1 mA,
I
B
= 0 , BFN26
250
300
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BFN24
I
C
= 100 µA,
I
E
= 0 , BFN26
250
300
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
6
Collector-base cutoff current
V
CB
= 200 V,
I
E
= 0 , BFN24
V
CB
= 250 V,
I
E
= 0 , BFN26
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C, BFN24
V
CB
= 250 V,
I
E
= 0 ,
T
A
= 150 °C, BFN26
-
-
-
-
I
EBO
h
FE
-
-
-
-
-
0.1
0.1
20
20
100
nA
-
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
-
DC current gain
2)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V, BFN24
I
C
= 30 mA,
V
CE
= 10 V, BFN26
25
40
40
30
V
CEsat
-
-
-
-
-
-
-
-
V
Collector-emitter saturation voltage
2)
I
C
= 20 mA,
I
B
= 2 mA, BFN24
I
C
= 20 mA,
I
B
= 2 mA, BFN26
-
-
V
BEsat
-
-
-
0.4
0.5
0.9
Base emitter saturation voltage
2)
I
C
= 20 mA,
I
B
= 2 mA
1
For
-
calculation of
R
thJA
please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
Pulse
2
2007-04-20
BFN24, BFN26
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
C
cb
Unit
max.
-
-
MHz
pF
typ.
70
1.5
-
-
Collector-base capacitance
V
CB
= 30 V,
f
= 1 MHz
3
2007-04-20
BFN24, BFN26
DC current gain
h
FE
=
ƒ(
I
C
)
V
CE
= 10 V
10
3
5
h
FE
2
10
2
5
BFN 24/26
EHP00627
Operating range
I
C
=
ƒ(
V
CEO
)
T
A
= 25°C,
D
= 0
10
3
mA
BFN 24/26
EHP00624
Ι
C
10
2
5
10
µ
s
100
µ
s
1 ms
100 ms
10
1
2
10
1
5
2
10
0
-1
10
5 10
0
5
500 ms
DC
10
0
5
5 10
1
5 10
2
mA 10
3
10
-1
10
0
5
10
1
5
10
2
V 5
V
CEO
10
3
Ι
C
Collector current
I
C
=
ƒ(
V
BE
)
V
CE
= 10 V
10
3
mA
BFN 24/26
EHP00625
Collector cutoff current
I
CBO
=
ƒ(
T
A
)
V
CB
= 200 V
10
4
nA
BFN 24/26
EHP00626
Ι
C
10
2
5
Ι
CB0
10
3
5
10
2
5
10
1
5
10
0
5
10
-1
max
10
1
5
typ
10
0
5
10
-1
0
0.5
1.0
V
BE
V
1.5
0
50
100
T
A
˚C 150
4
2007-04-20
BFN24, BFN26
Transition frequency
f
T
=
ƒ(
I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
MHz
C
CB
(C
EB
)
BFN 24/26
EHP00622
Collector-base capacitance
C
cb
=
ƒ(
V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(
V
EB
)
90
pF
f
T
70
60
50
10
2
40
CEB
5
30
20
10
CCB
10
1
10
0
5
10
1
5
10
2
mA 5
10
3
0
0
4
8
12
16
V
22
Ι
C
V
CB
(V
EB
)
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
400
10
3
P
tot max
5
P
tot DC
BFN 24/26
EHP00623
mW
t
p
D
=
T
t
p
T
300
P
tot
10
2
250
5
200
150
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
100
50
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
2007-04-20
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