E2G0010-17-41
¡ Semiconductor
MSM514256C/CL
¡ Semiconductor
This version: Jan. 1998
MSM514256C/CL
Previous version: May 1997
262,144-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514256C/CL is a 262,144-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic
SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially designed for
lower-power applications.
FEATURES
• 262,144-word
¥
4-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)
• Fast page mode, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
20-pin 300 mil plastic DIP
(DIP20-P-300-2.54-W1) (Product : MSM514256C/CL-xxRS)
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514256C/CL-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514256C/CL-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514256C/CL-45
MSM514256C/CL-50
MSM514256C/CL-60
MSM514256C/CL-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
45 ns 24 ns 14 ns 14 ns
50 ns 26 ns 14 ns 14 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
100 ns
120 ns
130 ns
468 mW
446 mW
385 mW
330 mW
5.5 mW/
1.1 mW (L-version)
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¡ Semiconductor
MSM514256C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
5
5
6
Unit
pF
pF
pF
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¡ Semiconductor
DC Characteristics
MSM514256C/CL
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Symbol
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Condition
I
OH
= –5.0 mA
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
MSM514256 MSM514256 MSM514256 MSM514256
C/CL-45
C/CL-50
C/CL-60
C/CL-70
Unit Note
Min. Max. Min. Max. Min. Max. Min. Max.
V
OH
V
OL
I
LI
2.4
0
–10
V
CC
0.4
10
2.4
0
–10
V
CC
0.4
10
2.4
0
–10
V
CC
0.4
10
2.4
0
–10
V
CC
0.4
10
V
V
mA
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
I
LO
–10
10
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
—
—
85
2
1
200
85
—
—
—
—
—
80
2
1
200
80
—
—
—
—
—
70
2
1
200
70
—
—
—
—
—
60
2
1
200
60
mA
1, 2
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
mA
mA
mA
1
1, 5
1, 2
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
—
5
—
5
—
5
—
5
mA
1
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
—
85
—
80
—
70
—
60
mA
1, 2
I
CC7
CAS
cycling,
t
PC
= Min.
t
RC
= 125
ms,
—
80
—
75
—
65
—
55
mA
1, 3
I
CC10
CAS
before
RAS,
t
RAS
£
1
ms
—
300
—
300
—
300
—
300
mA
1, 2,
4, 5
Notes : 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
6.5 V, –1.0 V
£
V
IL
£
0.2 V.
L-version.
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