MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5P21240/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
•
Typical 2–carrier W–CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power — 52 Watts Avg.
Power Gain — 13 dB
Efficiency — 24%
IM3 — –36 dBc
ACPR — –39 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz,
180 Watts CW Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N–Channel Enhancement–Mode Lateral MOSFET
MRF5P21240R6
2170 MHz, 52 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375D–04, STYLE 1
NI–1230
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
–0.5, +15
500
2.86
–65 to +150
200
180
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 55°C, 180 W CW
Case Temperature 45°C, 52 W CW
Symbol
R
θJC
Max
0.35
0.40
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P21240R6
1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C6 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1100 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
2.75
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.8
3.8
0.26
7.5
4
5
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
2–Carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 52 W Avg., I
DQ
= 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 52 W Avg., I
DQ
= 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 52 W Avg., I
DQ
= 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 52 W Avg., I
DQ
= 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 52 W Avg., I
DQ
= 2 x 1100 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
G
ps
12
13
—
dB
η
22.5
24
—
%
IM3
—
–36
–34
dBc
ACPR
—
–39
–37
dBc
IRL
—
–12
–9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
MRF5P21240R6
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
B1
V
GG
R4
+
C17
+
C15
C13
C9
R1
C5
Z11
Z3
Z1
Z2
Z7
Z4
C2
B2
Z12
Z6
Z10
Z14
Z18
Z20
C3
Z16
R2
C6
+
C23
+
C24
C7
C11
+
C25
+
C26
+
C28
V
DD
Z22
C1
DUT
Z5
Z9
Z13
Z17
Z19
C4
Z21
Z8
Z15
+
C19
+
C20
C8
C12
+
C21
+
C22
+
C27
V
DD
RF
INPUT
Z23
Z24
RF
OUTPUT
Freescale Semiconductor, Inc...
V
GG
R3
+
C18
+
C16
C14
C10
Z1
Z2, Z23
Z3, Z22
Z4, Z21
Z5, Z6
Z7, Z8
Z9, Z10
0.898″ x 0.080″ Microstrip
0.775″ x 0.136″ Microstrip
0.060″ x 0.080″ Microstrip
1.867″ x 0.080″ Microstrip
0.443″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.490″ x 0.540″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z24
PCB
1.270″ x 0.058″ Microstrip
0.250″ x 0.500″ Microstrip
0.850″ x 0.150″ Microstrip
0.535″ x 0.390″ Microstrip
0.218″ x 0.080″ Microstrip
0.825″ x 0.080″ Microstrip
Arlon GX–0300–55–22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5P21240R6 Test Circuit Schematic
Table 1. MRF5P21240R6 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10, C11, C12
C13, C14
C15, C16
C17, C18
C19, C20, C21, C22
C23, C24, C25, C26
C27, C28
R1, R2
R3, R4
Description
Short Ferrite Beads
18 pF Chip Capacitors
6.8 pF Chip Capacitors
0.1
µF
Chip Capacitors
1000 pF Chip Capacitors
4.7
µF
Tantalum Capacitors
10
µF
Electrolytic Capacitors
22
µF
Tantalum Capacitors
100
µF
Electrolytic Capacitors
1.0 kW, 1/8 W Chip Resistors
10
W,
1/8 W Chip Resistors
Value, P/N or DWG
2743019447
100B180JCA500X
100B6R8JCA500X
CDR33BX104AKWS
100B102JCA500X
T491C475M050
EEV–HB1H100P
T491X226K035AS4394
517D107M050BB6A
Manufacturer
Fair Rite
ATC
ATC
Kemet
ATC
Kemet
Panasonic
Kemet
Sprague
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P21240R6
3
Freescale Semiconductor, Inc.
MRF5P21240 Rev. 5
C17
C15
C13 C9
B1 R1
C19
C8
C5
C20
C22
C12
C27
R4
C21
C1
CUT OUT AREA
C4
Freescale Semiconductor, Inc...
C2
C24
C3
R3
B2 R2
C18
C16
C14 C10
C6
C25
C23
C7
C26 C11
C28
Figure 2. MRF5P21240R6 Test Circuit Component Layout
MRF5P21240R6
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
-5
-10
-15
-20
-25
-30
I
DQ
= 2640 mA
2420 mA
2200 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
IRL, INPUT RETURN LOSS (dB)
15
14
13
G ps , POWER GAIN (dB)
12
11
IRL
IM3
ACPR
2100
2120
2140
2160
2180
9
8
7
6
5
2080
10
G
ps
η
V
DD
= 28 Vdc, P
out
= 52 W (Avg.), I
DQ
= 2200 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
40
35
30
25
20
-25
-30
-35
-40
-45
-50
2200
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2–Carrier W–CDMA Broadband Performance
14
2420 mA
G ps , POWER GAIN (dB)
13.5
2200 mA
IMD,THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2640 mA
-25
-30
-35
-40
-45
13
1980 mA
1760 mA
12.5
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
12
2
10
100
300
-50 1980 mA
1760 mA
-55
2
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
-25
IMD, INTERMODULATION DISTORTION (dBc)
-30
-35
-40
-45
-50
-55
5th Order
7th Order
V
DD
= 28 Vdc, P
out
= 240 W (PEP), I
DQ
= 2200 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
0.1
1
TWO-TONE SPACING (MHz)
10
30
3rd Order
60
59
Pout , OUTPUT POWER (dBm)
58
57
56
55
54
53
52
51
50
36
37
38
39
40
V
DD
= 28 Vdc, I
DQ
= 2200 mA
Pulse CW, 8
µsec(on),
1.6 msec(off)
Center Frequency = 2140 MHz
41
42
43
44
45
46
P
in
, INPUT POWER (dBm)
P3dB = 55.03 dBm (318.24 W)
P1dB = 54.36 dBm (272.9 W)
Actual
Ideal
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P21240R6
5
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