HMC517LC4
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC517LC4 is ideal for use as a LNA or driver
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
Features
Noise Figure: 2.5 dB
Gain: 19 dB
OIP3: +23 dBm
Single Supply: +3V @ 67 mA
50 Ohm Matched Input/Output
• Military
RoHS Compliant 4 x 4 mm Package
Functional Diagram
General Description
The HMC517LC4 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) housed in
a leadless “Pb free” RoHS compliant SMT package.
The HMC517LC4 provides 19 dB of small signal gain,
2.5 dB of noise figure and has an output IP3 of
+23 dBm. The P1dB output power of +13 dBm enables
the LNA to also function as a LO driver for balanced,
I/Q or image reject mixers. The HMC517LC4 allows
the use of surface mount manufacturing techniques.
Electrical Specifi cations,
T
A
= +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
16
Min.
Typ.
17 - 22
19
0.02
2.5
15
11
12
15
23
67
0.03
3.1
15
Max.
Min.
Typ.
22 - 26
18
0.02
2.6
15
17
13
16
24
67
0.03
3.3
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 144
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC517LC4
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
Broadband Gain & Return Loss
25
Gain vs. Temperature
24
22
8
LOW NOISE AMPLIFIERS - SMT
8 - 145
15
RESPONSE (dB)
20
5
GAIN (dB)
S21
S11
S22
18
16
14
+25C
+85C
-40C
-5
-15
12
-25
12
16
20
24
28
32
FREQUENCY (GHz)
10
16
18
20
22
24
26
28
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C
+85C
-40C
RETURN LOSS (dB)
RETURN LOSS (dB)
26
28
-5
+25C
+85C
-40C
-5
-10
-10
-15
-15
-20
-20
16
18
20
22
24
FREQUENCY (GHz)
-25
16
18
20
22
24
26
28
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
Output IP3 vs. Temperature
30
25
20
IP3 (dBm)
15
10
8
NOISE FIGURE (dB)
+25C
+85C
-40C
6
4
+25C
+85C
-40C
2
5
0
16
18
20
22
24
26
16
18
20
22
24
26
FREQUENCY (GHz)
FREQUENCY (GHz)
0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC517LC4
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
20
Psat vs. Temperature
20
16
P1dB (dBm)
Psat (dBm)
16
12
12
+25C
+85C
-40C
8
+25C
+85C
-40C
8
4
4
0
16
18
20
22
24
26
FREQUENCY (GHz)
0
16
18
20
22
24
26
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
16
18
20
22
24
26
28
FREQUENCY (GHz)
+25C
+85C
-40C
Power Compression @ 21 GHz
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-24
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
-20
-16
-12
-8
-4
0
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 21 GHz
21
20
19
18
17
16
15
14
13
12
11
10
9
8
2.5
Gain
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
3
Vdd (V)
3.5
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Noise Figure
P1dB
8 - 146
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC517LC4
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.5
+3.0
+3.5
Idd (mA)
66
68
71
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+2 dBm
175 °C
2.65 W
34 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
8
LOW NOISE AMPLIFIERS - SMT
8 - 147
Note: Amplifi er will operate over full voltage range shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC517LC4
v02.1208
SMT PHEMT LOW NOISE
AMPLIFIER, 17 - 26 GHz
8
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 5-14, 18,
20, 22, 24
Function
Description
This pin may be connected to RF/DC ground.
Performance will not be affected.
Interface Schematic
N/C
3
RFIN
This pin is AC coupled and matched to 50 Ohms from
17 - 26 GHz.
23, 21, 19
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 μF are required.
16
RFOUT
This pin is AC coupled and matched to 50 Ohms from
17 - 26 GHz.
2, 4, 15, 17
GND
These pins and package bottom must be
connected to RF/DC ground.
Application Circuit
Component
C1, C2, C3
C4, C5, C6
C7, C8, C9
Value
100 pF
1,000 pF
2.2 μF
8 - 148
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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