S-57P1 S Series
www.sii-ic.com
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE
HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.2
_00
© SII Semiconductor Corporation, 2015-2017
This IC, developed by CMOS technology, is a high-accuracy Hall effect latch IC that operates with high temperature and
high-withstand voltage.
The output voltage changes when this IC detects the intensity level of magnetic flux density and a polarity change. Using
this IC with a magnet makes it possible to detect the rotation status in various devices.
This IC includes a reverse voltage protection circuit and an output current limit circuit.
High-density mounting is possible by using the small SOT-23-3S package.
Due to its high-accuracy magnetic characteristics, this IC enables the user to reduce the operational variation in the system.
SII Semiconductor Corporation offers a "magnetic simulation service" that provides the ideal combination of magnets and our
Hall effect ICs for customer systems. Our magnetic simulation service will reduce prototype production, development period
and development costs. In addition, it will contribute to optimization of parts to realize high cost performance.
For more information regarding our magnetic simulation service, contact our sales office.
Caution
This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in the
purpose, contact to SII Semiconductor Corporation is indispensable.
Features
•
Pole detection:
*1
•
Output logic :
•
Output form:
•
Magnetic sensitivity
*1
:
Bipolar latch
V
OUT
= "L" at S pole detection
V
OUT
= "H" at S pole detection
Nch open-drain output
B
OP
= 0.5 mT typ.
B
OP
= 1.5 mT typ.
B
OP
= 2.2 mT typ.
B
OP
= 3.0 mT typ.
f
C
= 500 kHz typ.
t
D
= 8.0
μs
typ.
V
DD
= 2.7 V to 26.0 V
•
Chopping frequency:
•
Output delay time:
•
Power supply voltage range:
•
Built-in regulator
•
Built-in reverse voltage protection circuit
•
Built-in output current limit circuit
•
Operation temperature range:
•
Lead-free (Sn 100%), halogen-free
•
AEC-Q100 qualified
*2
*1.
The option can be selected.
*2.
Contact our sales office for details.
Ta =
−40°C
to
+150°C
Applications
•
Automobile equipment
•
Home appliance
•
DC brushless motor
•
Housing equipment
•
Industrial equipment
Package
•
SOT-23-3S
1
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.2
_00
S-57P1 S Series
Block Diagrams
VDD
Reverse voltage
protection circuit
Regulator
Chopping
stabilized
amplifier
Output current limit circuit
VSS
*1
OUT
*1.
Parasitic diode
Figure 1
2
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.2
_00
S-57P1 S Series
AEC-Q100 Qualified
This IC supports AEC-Q100 for operation temperature grade 0.
Contact our sales office for details of AEC-Q100 reliability specification.
Product Name Structure
1. Product name
S-57P1
N
B
x
x
S
-
M3T4
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications
*1
M3T4: SOT-23-3S, Tape
Operation temperature
S: Ta =
−40°C
to
+150°C
Magnetic sensitivity
9: B
OP
= 0.5 mT typ.
0: B
OP
= 1.5 mT typ.
8: B
OP
= 2.2 mT typ.
1: B
OP
= 3.0 mT typ.
Output logic
L: V
OUT
= "L" at S pole detection
H: V
OUT
= "H" at S pole detection
Pole detection
B: Bipolar latch
Output form
N: Nch open-drain output
*1.
Refer to the tape drawing.
2. Package
Table 1
Package Name
SOT-23-3S
Package Drawing Codes
Tape
MP003-D-C-SD
Reel
MP003-D-R-SD
Dimension
MP003-D-P-SD
3. Product name list
Table 2
Product Name
Output Form
Pole Detection
Output Logic
Magnetic
Sensitivity (B
OP
)
0.5 mT typ.
1.5 mT typ.
2.2 mT typ.
3.0 mT typ.
0.5 mT typ.
1.5 mT typ.
3.0 mT typ.
V
OUT
= "L" at S pole detection
S-57P1NBL9S-M3T4U Nch open-drain output Bipolar latch
V
OUT
= "L" at S pole detection
S-57P1NBL0S-M3T4U Nch open-drain output Bipolar latch
V
OUT
= "L" at S pole detection
S-57P1NBL8S-M3T4U Nch open-drain output Bipolar latch
V
OUT
= "L" at S pole detection
S-57P1NBL1S-M3T4U Nch open-drain output Bipolar latch
V
OUT
= "H" at S pole detection
S-57P1NBH9S-M3T4U Nch open-drain output Bipolar latch
V
OUT
= "H" at S pole detection
S-57P1NBH0S-M3T4U Nch open-drain output Bipolar latch
V
OUT
= "H" at S pole detection
S-57P1NBH1S-M3T4U Nch open-drain output Bipolar latch
Remark
Please contact our sales office for products other than the above.
3
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.2
_00
S-57P1 S Series
Pin Configuration
1. SOT-23-3S
Table 3
Top view
1
Pin No.
1
2
3
Symbol
VSS
VDD
OUT
GND pin
Description
Power supply pin
Output pin
2
3
Figure 2
Absolute Maximum Ratings
Table 4
Item
Power supply voltage
Output current
Output voltage
Junction temperature
Operation ambient temperature
Storage temperature
Symbol
V
DD
I
OUT
V
OUT
T
j
T
opr
T
stg
(Ta =
+25°C
unless otherwise specified)
Absolute Maximum Rating
Unit
V
SS
−
28.0 to V
SS
+
28.0
20
V
SS
−
0.3 to V
SS
+
28.0
−40
to
+170
−40
to
+150
−40
to
+170
V
mA
V
°C
°C
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Thermal Resistance Value
Table 5
Condition
Board A
Board B
*1
Junction-to-ambient thermal resistance
SOT-23-3S
θ
ja
Board C
Board D
Board E
*1.
Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark
Refer to "
Power Dissipation"
and "Test
Board"
for details.
Item
Symbol
Min.
−
−
−
−
−
Typ.
200
165
−
−
−
Max.
−
−
−
−
−
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
4
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC
Rev.1.2
_00
S-57P1 S Series
Electrical Characteristics
Table 6
(Ta =
+25°C,
V
DD
= 12.0 V, V
SS
= 0 V unless otherwise specified)
Test
Condition
Min.
Typ. Max.
Unit
Circuit
−
Average value
2.7
−
−0.1
−
−
22
−
−
−
−
−
12.0
3.0
−
−
−
−
8.0
500
20
−
−
26.0
4.0
−
0.4
1
70
−
−
−
2.0
2.0
V
mA
mA
V
μA
mA
μs
kHz
μs
μs
μs
−
1
1
2
3
3
−
−
4
5
5
Item
Power supply voltage
Current consumption
Current consumption
during reverse connection
Output voltage
Leakage current
Output limit current
Output delay time
Chopping frequency
Start up time
Output start up time
Output fall time
Symbol
V
DD
I
DD
I
DDREV
V
DD
=
−26.0
V
V
OUT
I
LEAK
I
OM
t
D
f
C
t
PON
t
R
t
F
I
OUT
= 10 mA
Output transistor Nch, V
OUT
= 26.0 V
V
OUT
= 12.0 V
−
−
−
C = 20 pF, R = 820
Ω
C = 20 pF, R = 820
Ω
S pole
Magnetic flux density
applied to this IC (B)
B
OP
0
B
RP
N pole
t
D
t
F
90%
t
D
t
R
Output voltage (V
OUT
)
(Product with V
OUT
= "L"
at S pole detection)
10%
t
D
t
R
90%
Output voltage (V
OUT
)
(Product with V
OUT
= "H"
at S pole detection)
10%
t
D
t
F
Figure 3
Operation Timing
5
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