RT65KP48A thru RT65KP75CA, e3
AIRCRAFT DC POWER BUS PROTECTION
SCOTTSDALE DIVISION
DESCRIPTION
Microsemi’s
65 kW
bidirectional Transient Voltage Suppressors (TVSs)
protects 28 volt dc airborne electronic equipment from harsh lightning
environments per
RTCA/DO-160E
Section 22 and is compatible with
Section 16, paragraph 16.6.2.4 Category A for 46.3 V, Category B for 60 V,
and Category Z for 80 V high-line surges. It is also optionally available with
screening in accordance with MIL-PRF-19500 or avionics screening as
described in the Features section. It is also available as RoHS Compliant
(annealed matte-Tin finish) with an e3 suffix added to the part number.
Microsemi also offers a broad spectrum of other TVSs to meet your needs.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
•
•
•
•
Unidirectional TVS construction with A suffix or
bidirectional with a CA suffix
Suppresses transients up to
65 kW @ 6.4/69
μs
Fast response with less than 5 ns turn-on time.
Optional 100%
screening for avionics grade
is available
by adding
MA
prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X), surge (3X) in
each direction, 24 hours HTRB in each direction, and post
test (V
BR
and I
D
)
Options for
screening
in accordance with MIL-PRF-19500
for JAN, JANTX,
and
JANTXV
are also available by
adding MQ, MX, or MV prefixes respectively to part
numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B.
RoHS Compliant devices available by adding “e3” suffix
•
APPLICATIONS / BENEFITS
Pin injection protection per RTCA/DO-160E up to Level
5 for Waveform 4 (6.4/69 µs) and up to Level 3 for
Waveform 5A (40/120
μs)
at 70
o
C
Compatible with “abnormal surge voltage (dc)” in
16.6.2.4
(Category A, B, and Z) of RTCA/DO-160E
The RT65KP48A is designed for Category A in
protecting 80V components**
The RT65KP54A or 60A is designed for Category B in
protecting 90V or 100 V components**
The RT65KP75A is designed for Category Z in
protecting 125 V components**
Consult Factory for other voltages with similar Peak
Pulse Power capabilities.
**includes switching transistors, MOSFETs & IGBTs
in off-line switching power supplies
•
•
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•
•
•
•
•
•
•
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•
MAXIMUM RATINGS
Steady-state power dissipation: 7 W @ T
L
= 25
o
C
Peak Pulse Power (P
PP
) at 25
o
C: 65 kW at 6.4/69 µs per
waveform in Figure 8 (derate per Figure 2)
Repetition rate: 0.01% max.
o
o
Operating & storage temperatures: -55 C to +150 C
Temperature coefficient of voltage: +0.100%/
o
C max
o
Solder Temperatures: 260 C for 10 s maximum
o
MECHANICAL & PACKAGING
•
•
•
•
•
CASE: Molded Epoxy (meets UL94V-O requirements)
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
Polarity: Cathode marked with band for unidirectional
(no band required for bi-directional)
MARKING: Manufacturers logo and part number.
Add prefix MA, MQ, MX, etc., for screened parts.
Package dimensions: See last page
ELECTRICAL PARAMETERS @ 25
C
Devices are Bidirectional
RT65KP48A–75CA, e3
MICROSEMI PART
NUMBER
(replace A suffix with
CA for bidirectional)
Working
Standoff
Voltage
V
WM
V max
Maximum
Standby
Current
I
D
@ V
WM
μA
Minimum
Breakdown
Voltage
V
BR
@ I
(BR)
V
Breakdown
Current
I
(BR)
mA
Maximum
Clamping
Voltage
V
C
@ I
PP
(Note 1)
V
Peak Pulse
Current
I
PP
@ 6.4/69
μs
(Note 2)
A
RT65KP48A
48
5
53.3
5
77.7
836
RT65KP54A
54
5
60.0
5
87.5
742
RT65KP60A
60
5
66.7
5
97.3
668
RT65KP75A
75
5
83.3
5
122
533
NOTE 1:
See MicroNote 108 for lower Clamping Voltage performance at lower I
P
values relative to I
PP
and P
PP
ratings and Figure 1.
NOTE 2:
Equivalent to ratings of 257, 228, 205, and 164 Amps of 20 kW at a longer 10/1000
μs
impulse (see Figure 1) with
clamping voltages shown for the RT65KP48A, 54A, 60A, and 75A part numbers respectively. Also see Peak Pulse Power
(P
PP
) performance levels for other aircraft waveforms on page 3 for this device series.
Copyright
©
2007
6-20-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
RT65KP48A thru RT65KP75CA, e3
AIRCRAFT DC POWER BUS PROTECTION
SCOTTSDALE DIVISION
GRAPHS
WWW .
Microsemi
.C
OM
NOTE: This P
PP
versus time graph allows the designer to use
these parts over a broad power spectrum using the guidelines
illustrated in App Note 104 on Microsemi’s website. Aircraft
transients are described with exponential decaying waveforms.
For suppression of square-wave impulses, derate power and
current to 66% of that for exponential decay as shown in Figure 1.
Peak Pulse Power (P
PP
) or continuous
o
Power in % of 25
C
rating
P
PP
Peak Pulse Power vs. Pulse Time – kW
Non-Repetitive Pulse
tp – Pulse Time – sec.
T
L
Lead Temperature
o
C
FIGURE 1
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
FIGURE 2
POWER DERATING
Correct
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
Figure 3 illustrates minimal parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
illustrated with figure 4.
The loss of
effectiveness in protection caused by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
Wrong
FIGURE 3
FIGURE 5
RT65KP48A–75CA, e3
FIGURE 4
FIGURE 6
Copyright
©
2007
6-20-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
RT65KP48A thru RT65KP75CA, e3
AIRCRAFT DC POWER BUS PROTECTION
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
t
t – time
Note: frequency is 1MHz
t – time
t - Time
FIGURE 7 –
Waveform 3
FIGURE 8 –
Waveform 4
FIGURE 9 –
Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4
μs.
Equivalent peak pulse power at each of the pulse widths
represented in RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as Application Notes 104
and 120 (found on Microsemi’s website) and are listed below.
WAVEFORM
NUMBER
PULSE WIDTH
μs
PEAK PULSE
POWER
kW
290
65
49
3
4
5A
4
6.4/69
40/120
Note: High current fast rise-time transients of 250 ns or less can more than triple the V
C
from parasitic inductance effects (V= -Ldi/dt) compared to the
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.
DIMENSIONS
RT65KP48A–75CA, e3
Copyright
©
2007
6-20-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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