NXP Semiconductors
Technical Data
Document Number: MRF300AN
Rev. 2, 06/2019
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in HF and VHF communications,
industrial, scientific and medical (ISM) and broadcast and aerospace
applications. The devices are extremely rugged and exhibit high performance
up to 250 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
13.56
(1)
27
(2)
MRF300AN
MRF300BN
1.8–250 MHz, 300 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Signal Type
P
out
(W)
320 CW
330 CW
330 CW
320 CW
325 CW
320 CW
G
ps
(dB)
28.1
27.4
28.2
27.3
25.1
23.0
20.4
D
(%)
79.7
80.0
79.0
73.0
77.5
73.0
75.5
G
S
D
TO-
-247-
-3
MRF300AN
40.68
(3)
50
(4)
81.36
(5)
CW
144
(6)
230
(7)
Pulse
(100
sec,
20% Duty Cycle)
330 Peak
Load Mismatch/Ruggedness
Frequency
(MHz)
40.68
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
> 65:1 at all
Phase
Angles
> 65:1 at all
Phase
Angles
P
in
(W)
2 Peak
(3 dB
Overdrive)
6 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
No Device
Degradation
D
230
50
S
G
TO-
-247-
-3
MRF300BN
1.
2.
3.
4.
5.
6.
7.
Measured in 13.56 MHz reference circuit (page 5).
Measured in 27 MHz reference circuit (page 10).
Measured in 40.68 MHz reference circuit (page 15).
Measured in 50 MHz reference circuit (page 20).
Measured in 81.36 MHz reference circuit (page 25).
Measured in 144 MHz reference circuit (page 30).
Measured in 230 MHz fixture (page 35).
D
G
S
Features
Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies
Backside
Note: Exposed backside of the package
also serves as a source terminal
for the transistor.
2018–2019 NXP B.V.
MRF300AN MRF300BN
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
–0.5, +133
–6.0, +10
50
– 65 to +150
–40 to +150
–40 to +175
272
1.82
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 76C, 300 W CW, 50 Vdc, I
DQ
= 50 mA, 40.68 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 74C, 300 W Peak, 100
sec
Pulse Width, 20% Duty Cycle,
50 Vdc, I
DQ
= 100 mA, 230 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.55
0.13
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Class
2, passes 2500 V
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
0
Package Peak Temperature
225
(4)
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 840
Adc)
Gate Quiescent Voltage
(V
DS
= 50 Vdc, I
D
= 100 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 30 Adc)
1.
2.
3.
4.
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.7
—
—
—
2.2
2.5
0.16
28
2.7
—
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
—
133
—
—
—
—
1
—
10
Adc
Vdc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Peak temperature during reflow process must not exceed 225C.
(continued)
MRF300AN MRF300BN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.31
104
403
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Typical Performance — 230 MHz
(In NXP 230 MHz Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA, P
in
= 3 W, f = 230 MHz,
100
sec
Pulse Width, 20% Duty Cycle
Common--Source Amplifier Output Power
Drain Efficiency
Input Return Loss
P
out
D
IRL
—
—
—
330
75.5
–21
—
—
—
W
%
dB
Table 6. Load Mismatch/Ruggedness
(In NXP 230 MHz Fixture, 50 ohm system) I
DQ
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
6 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
Table 7. Ordering Information — Device
Device
MRF300AN
MRF300BN
MPQ = 240 devices (30 devices per tube, 8 tubes per box)
Shipping Information
Package
TO--247--3L (Pin 1: Gate,
Pin 2: Source, Pin 3: Drain)
TO--247--3L (Pin 1: Drain,
Pin 2: Source, Pin 3: Gate)
Table 8. Ordering Information — Reference Circuits
Order Number
MRF300AN-13MHZ
MRF300AN-27MHZ
MRF300AN-40MHZ
MRF300AN-50MHZ
MRF300AN-81MHZ
MRF300AN-144MHZ
MRF300AN-230MHZ
MRF300AN 13.56 MHz Reference Circuit
MRF300AN 27 MHz Reference Circuit
MRF300AN 40.68 MHz Reference Circuit
MRF300AN 50 MHz Reference Circuit
MRF300AN 81.36 MHz Reference Circuit
MRF300AN 144 MHz Reference Circuit
MRF300AN 230 MHz Test Fixture
Description
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
1000
Measured with
30
mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc
C
iss
C, CAPACITANCE (pF)
MTTF (HOURS)
100
C
oss
10
8
V
DD
= 50 Vdc
I
D
= 6.2 Amps
10
7
7.8 Amps
8.7 Amps
10
6
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
10
5
10
4
90
110
130
150
170
190
T
J
, JUNCTION TEMPERATURE (C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Figure 1. Capacitance versus Drain-
-Source Voltage
Figure 2. MTTF versus Junction Temperature — CW
MRF300AN MRF300BN
4
RF Device Data
NXP Semiconductors
13.56 MHz REFERENCE CIRCUIT (MRF300AN)
Table 9. 13.56 MHz Performance
(In NXP Reference Circuit, 50 ohm system)
V
DD
= 50 Vdc, I
DQ
= 100 mA, P
in
= 0.5 W, CW
Frequency
(MHz)
13.56
P
out
(W)
320
G
ps
(dB)
28.1
D
(%)
79.7
MRF300AN MRF300BN
RF Device Data
NXP Semiconductors
5
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