74LVC1G34Q
SINGLE BUFFER GATE
Description
The 74LVC1G34Q is an automotive-compliant, single buffer gate with
a standard push-pull output. The device is designed for operation with
a power supply range of 1.65V to 5.5V. The inputs are tolerant to 5.5V
allowing this device to be used in a mixed voltage environment. The
device is fully specified for partial power down applications using I
OFF
.
The I
OFF
circuitry disables the output preventing damaging current
backflow when the device is powered down.
Pin Assignments
( Top View )
NC
1
A
2
5
Vcc
The gate performs the positive Boolean function:
Y=A
GND
3
SOT 25 / SOT353
4
Y
Features
Grade 1 Ambient Temperature Operation: -40° to +125°
C
C
Wide Supply Voltage Range from 1.65V to 5.5V
± 24mA Output Drive at 3.3V
CMOS Low Power Consumption
I
OFF
Supports Partial-Power-Down Mode Operation
Inputs Accept up to 5.5V Regardless of V
CC
Level
ESD Protection Tested per AEC-Q100
Exceeds 2000V Human Body Model (AEC-Q100-002)
Exceeds 1000V Charged Device Model (AEC-Q100-011)
Latch-Up Exceeds 100mA (AEC-Q100-004)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The 74LVC1G34Q is suitable for automotive applications
requiring specific change control; this part is AEC-Q100
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/
Applications
Voltage Level Shifting
General Purpose Logic
Power Down Signal Isolation
Wide Array of Products such as:
Automotive Applications within Grade 1 Temperature
Range
Industrial Computing/Controls/Automation
High Reliability Networking/Communications
Industrial/Agricultural Equipment
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
74LVC1G34Q
Document number: DS39794 Rev. 2 - 2
1 of 9
www.diodes.com
June 2020
© Diodes Incorporated
74LVC1G34Q
Pin Descriptions
Pin Name
NC
A
GND
Y
V
CC
Description
No Connection
Data Input
Ground
Data Output
Supply Voltage
Logic Diagram
A
2
4
Y
Function Table
Input
A
H
L
Output
Y
H
L
Absolute Maximum Ratings
(Notes 4 & 5)
Symbol
ESD HBM
ESD CDM
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
I
CC
, I
GND
T
J
T
STG
Notes:
Description
Human Body Model ESD Protection
Charged Device Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage Applied to Output in High Impedance or I
OFF
State
Voltage Applied to Output in High or Low State
Input Clamp Current V
I
< 0
Output Clamp Current
Continuous Output Current
Continuous Current Through V
CC
or GND
Operating Junction Temperature
Storage Temperature
Rating
2
1
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.5 to V
CC
+ 0.5
-50
-50
±50
±100
-40 to +150
-65 to +150
Unit
kV
kV
V
V
V
V
mA
mA
mA
mA
°
C
°
C
4. Stresses beyond the absolute maximum can result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
5. Forcing the maximum allowed voltage could cause a condition exceeding the maximum current or conversely forcing the maximum current could
cause a condition exceeding the maximum voltage. The ratings of both current and voltage must be maintained within the controlled range.
74LVC1G34Q
Document number: DS39794 Rev. 2 - 2
2 of 9
www.diodes.com
June 2020
© Diodes Incorporated
74LVC1G34Q
Recommended Operating Conditions
(Note 6)
Symbol
V
CC
Operating Voltage
Parameter
Operating
Data retention only
V
CC
= 1.65V to 1.95V
V
IH
High-Level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 1.65V to 1.95V
V
IL
Low-Level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
I
V
O
Input Voltage
Output Voltage
V
CC
= 1.65V
V
CC
= 2.3V
I
OH
High-Level Output Current
V
CC
= 2.7V
V
CC
= 3V
V
CC
= 4.5V
V
CC
= 1.65V
V
CC
= 2.3V
I
OL
Low-Level Output Current
V
CC
= 2.7V
V
CC
= 3V
V
CC
= 4.5V
V
CC
= 1.8V ± 0.15V, 2.5V ± 0.2V
Δt/ΔV
Input Transition Rise or Fall
Rate
Operating Free-Air
Temperature
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
T
A
Note:
Min
1.65
1.5
0.65
V
CC
1.7
2
0.7
V
CC
—
—
—
—
0
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-40
Max
5.5
—
—
—
—
—
0.35
V
CC
0.7
0.8
0.3
V
CC
5.5
V
CC
-4
-8
-12
-16
-24
-32
4
8
12
16
24
32
20
10
5
+125
Unit
V
V
V
V
V
V
mA
mA
ns/V
—
°
C
6. Unused inputs should be held at V
CC
or Ground.
74LVC1G34Q
Document number: DS39794 Rev. 2 - 2
3 of 9
www.diodes.com
June 2020
© Diodes Incorporated
74LVC1G34Q
Electrical Characteristics
(All typical values are at V
CC
= 3.3V, T
A
= +25°
C)
Symbol
Parameter
Test Conditions
I
OH
= -100μA
I
OH
= -4mA
V
OH
High Level Output Voltage
V
I
= V
IH
I
OH
= -8mA
I
OH
= -12mA
I
OH
= -24mA
I
OH
= -32mA
I
OL
= 100μA
I
OL
= 4mA
I
OL
= 8mA
V
OL
Low Level Output Voltage
V
I
= V
IL
I
OL
= 12mA
I
OL
= 24mA
I
OL
= 32mA
I
I
I
OFF
I
CC
ΔI
CC
C
I
Input Current
Power Down Leakage Current
Supply Current
Additional Supply Current
Input Capacitance
V
I
= 5.5V or GND
V
I
or V
O
= 5.5V
V
I
= 5.5V or GND
I
O
= 0
Input at V
CC
– 0.6V
V
I
= GND to V
CC
V
CC
1.65V to 5.5V
1.65V
2.3V
2.7V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
2.7V
3V
4.5V
0 to 5.5V
0V
5.5V
3V to 5.5V
3.3V
-40° to +125°
C
C
Min
Typ
Max
—
—
V
CC
– 0.1
0.95
1.7
1.9
2.0
3.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
±0.1
—
0.1
—
5.0
—
—
—
—
—
0.10
0.70
0.45
0.60
0.80
0.80
±1
±2
4
500
—
μA
μA
μA
μA
pF
V
V
Unit
Package Characteristics
Symbol
JA
JC
Note:
Parameter
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
Package
SOT25
SOT353
SOT25
SOT353
Test Conditions
Note 7
Note 7
Min
—
—
—
—
Typ
184
385
62
164
Max
—
—
—
—
Unit
°
C/W
°
C/W
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
Switching Characteristics
Figure 1 Typical Values at T
A
= +25° and nominal voltages 1.8V, 2.5V, 2.7V, 3.3V, and 5.0V.
C
Parameter
From
Input
To
Output
V
CC
1.8V ± 0.15V
t
PD
A
Y
2.5V ± 0.2V
2.7V
3.3V ± 0.3V
5.0V ± 0.5V
T
A
= -40° to +125°
C
C
Min
1.0
0.5
0.5
0.5
0.5
Typ
4.0
2.6
2.3
2.0
1.6
Max
11.0
5.6
5.6
5.2
4.1
ns
Unit
Operating Characteristics
T
A
= +25°
C
Parameter
C
PD
Power Dissipation
Capacitance
Test
Conditions
f = 10MHz
V
CC
= 1.8V
Typ
15
V
CC
= 2.5V
Typ
16
V
CC
= 3.3V
Typ
16
V
CC
= 5V
Typ
16
Unit
pF
74LVC1G34Q
Document number: DS39794 Rev. 2 - 2
4 of 9
www.diodes.com
June 2020
© Diodes Incorporated
74LVC1G34Q
Measurement Information
From Output
Under Test
C
L
(see Note A)
R
L
V
CC
V
I
1.8V ± 0.15V
2.5V ± 0.2V
2.7V
3.3V ± 0.3V
5.0V ± 0.5V
V
CC
V
CC
V
CC
3.0V
V
CC
Inputs
t
R
/t
F
≤2ns
≤2ns
≤2.5ns
≤2.5ns
≤2.5ns
V
M
V
CC
/2
V
CC
/2
1.5V
1.5V
V
CC
/2
C
L
30pF
30pF
50pF
50pF
50pF
R
L
1kΩ
500Ω
500Ω
500Ω
500Ω
t
W
V
l
V
l
Input
V
M
V
M
0V
Voltage Waveform Pulse Duration
Input
t
PLH
Output
V
M
V
M
0V
t
PHL
V
OH
V
M
V
M
V
OL
t
PHL
Output
V
M
t
PLH
V
OH
V
M
V
OL
Voltage Waveform Propagation Delay Times
Inverting and Non Inverting Outputs
Figure 1. Load Circuit and Voltage Waveforms
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 10MHz.
C. Inputs are measured separately one transition per measurement.
D. t
PLH
and t
PHL
are the same as t
PD
.
74LVC1G34Q
Document number: DS39794 Rev. 2 - 2
5 of 9
www.diodes.com
June 2020
© Diodes Incorporated
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