增強型場效應管
P-Channel Enhancement-Mode MOSFET
P-Channel Enhancement-Mode MOSFET
增強型場效應管
FHK4435A
DESCRIPTION & FEATURES
概述及特點
SOT-223
High dense cell design for extremely low RDS(ON).
高密集
單元設計½導通電阻
Rugged and reliable.
高可靠性
-30V, -8.8A, R
DS(ON)
= 24mΩ@V
GS
= -10V.
R
DS(ON)
= 35mΩ@VGS = -4.5V.
SOT223 package.
PIN ASSIGNMENT
引腳說明
PIN NAME
FUNCTION
PIN NUMBER
引腳序號
管腳符號
功½
SOT-223
G
1
Gate
D
2
Drain
S
3
Source
D
4
Drain
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Symbol
符號
Rating
額定值
Drain-Source Voltage
漏極-源極電壓
-30
V
DSS
Gate-Source Voltage
柵極-源極電壓
V
GSS
±20
Drain Current—Continuous
漏極電流-連續
-8.8
I
D
Peak Drain Current
峰值漏極電流
-35
I
DM
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Symbol
符號
Max
最大值
Total Device Dissipation FR-5 Board(1) T
A
=25℃
PD
770
Total Device Dissipation Alumina Substrate,(2) T
A
=25℃
P
D
1.3
½耗散功率 氧化鋁襯底
150,
T
J
,
Junction and Storage Temperature結溫和儲存溫度
T
stg
-55 to +150
1. FR-5=1.0×0.75×0.062in, printed-circuit board.
2. Alumina=0.4×0.3×0.024in, 99.5%alumina
DEVICE MARKING
打標
FHK4435A=4435A
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明,溫度為
25℃)
Symbol
Test Condition
Characteristic
特性參數
符號
測試條件
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓
Zero Gate Voltage Drain Current
零柵電壓漏極電流
Gate-Body Leakage Current,Forward
柵洩漏電流
Gate Threshold Voltage
開啟電壓
Static Drain-Source On-State Resistance
漏源導通電阻
Forward Transconductance
跨導
Unit
單½
Vdc
Vdc
Adc
Adc
Unit
單½
mW
W
℃
Min
TYP
最小值 典型值
-30
—
Max
Unit
最大值 單½
—
V
V
(BR)DSS
V
GS
=0V, I
D
=-250µA
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
V
DS
=-30V, V
GS
=0V
V
GS
=±20V
V
DS
=V
GS
,I
D
=-250µA
V
GS
=-10V, I
D
=-8.8A
V
GS
=-4.5V, I
D
=-5 A
V
DS
=-15V ,I
D
=-8.8A
—
—
-1
—
-
—
—
-
20
27
12
-1
±100
-3
24
35
—
µA
nA
V
m
Ω
S
1
增強型場效應管
P-Channel Enhancement-Mode MOSFET
P-Channel Enhancement-Mode MOSFET
增強型場效應管
Diode Forward On-Voltage
正向電壓
Turn-On Delay Time
Turn-On Time
Turn-Off Delay Time
Turn-On Fall Time
Input Capacitance
輸入電容
Output Capacitance
輸出電容
Reverse Transfer Capacitance
回饋電容
Total Gate Charge
柵極電量
Gate.to source charge
柵源極電量
Gate.to drain charge
柵漏極電量
FHK4435A
—
—
-
12
6
110
35
2200
550
230
22
7
8
-1.2
24
18
ns
—
—
—
140
70
—
—
—
28
—
—
pF
pF
pF
nC
nC
nC
V
V
SD
t
d(on)
tr
t
d(off)
t
f
Ciss
Coss
Crss
Q
G
Q
GS
Q
GD
V
GS
=0V, I
S
=-2.1A
V
DD
=
-15
V
,
I
D
=-1A
,
V
GEN
=-10
V
,
R
GEN
=
6Ω
—
V
DS
=
-15
V
, V
GS
=
0
V
,
f
=
1.0 MHz
—
—
—
V
DD
=-15V, V
GS
=-5V,
I
D
=-4.6A
—
—
2