W632GU6NB
16M
8 BANKS
16 BIT DDR3L SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
8.
8.1
8.2
GENERAL DESCRIPTION ................................................................................................................... 5
FEATURES ........................................................................................................................................... 5
ORDER INFORMATION ....................................................................................................................... 6
KEY PARAMETERS ............................................................................................................................. 7
BALL CONFIGURATION ...................................................................................................................... 9
BALL DESCRIPTION .......................................................................................................................... 10
BLOCK DIAGRAM .............................................................................................................................. 12
FUNCTIONAL DESCRIPTION ............................................................................................................ 13
Basic Functionality .............................................................................................................................. 13
RESET and Initialization Procedure .................................................................................................... 13
8.2.1
Power-up Initialization Sequence ..................................................................................... 13
8.2.2
Reset Initialization with Stable Power .............................................................................. 15
Programming the Mode Registers....................................................................................................... 16
8.3.1
Mode Register MR0 ......................................................................................................... 18
8.3.1.1
Burst Length, Type and Order ................................................................................ 19
8.3.1.2
CAS Latency........................................................................................................... 19
8.3.1.3
Test Mode............................................................................................................... 20
8.3.1.4
DLL Reset............................................................................................................... 20
8.3.1.5
Write Recovery ....................................................................................................... 20
8.3.1.6
Precharge PD DLL ................................................................................................. 20
8.3.2
Mode Register MR1 ......................................................................................................... 21
8.3.2.1
DLL Enable/Disable ................................................................................................ 21
8.3.2.2
Output Driver Impedance Control ........................................................................... 22
8.3.2.3
ODT RTT Values .................................................................................................... 22
8.3.2.4
Additive Latency (AL) ............................................................................................. 22
8.3.2.5
Write leveling .......................................................................................................... 22
8.3.2.6
Output Disable ........................................................................................................ 22
8.3.3
Mode Register MR2 ......................................................................................................... 23
8.3.3.1
Partial Array Self Refresh (PASR) .......................................................................... 24
8.3.3.2
CAS Write Latency (CWL) ...................................................................................... 24
8.3.3.3
Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) ............................. 24
8.3.3.4
Dynamic ODT (Rtt_WR) ......................................................................................... 24
8.3.4
Mode Register MR3 ......................................................................................................... 25
8.3.4.1
Multi Purpose Register (MPR) ................................................................................ 25
No OPeration (NOP) Command .......................................................................................................... 26
Deselect Command............................................................................................................................. 26
DLL-off Mode ...................................................................................................................................... 26
DLL on/off switching procedure ........................................................................................................... 27
8.7.1
DLL “on” to DLL “off” Procedure ....................................................................................... 27
8.7.2
DLL “off” to DLL “on” Procedure ....................................................................................... 28
Input clock frequency change ............................................................................................................. 29
8.8.1
Frequency change during Self-Refresh............................................................................ 29
8.8.2
Frequency change during Precharge Power-down .......................................................... 29
Write Leveling ..................................................................................................................................... 31
8.9.1
DRAM setting for write leveling & DRAM termination function in that mode .................... 32
8.3
8.4
8.5
8.6
8.7
8.8
8.9
Publication Release Date: Apr. 10, 2019
Revision: A02
-1-
W632GU6NB
8.9.2
Write Leveling Procedure ................................................................................................. 32
8.9.3
Write Leveling Mode Exit ................................................................................................. 34
Multi Purpose Register ........................................................................................................................ 35
8.10.1
MPR Functional Description............................................................................................. 36
8.10.2
MPR Register Address Definition ..................................................................................... 37
8.10.3
Relevant Timing Parameters ............................................................................................ 37
8.10.4
Protocol Example ............................................................................................................. 37
ACTIVE Command.............................................................................................................................. 43
PRECHARGE Command .................................................................................................................... 43
READ Operation ................................................................................................................................. 44
8.13.1
READ Burst Operation ..................................................................................................... 44
8.13.2
READ Timing Definitions .................................................................................................. 45
8.13.2.1
READ Timing; Clock to Data Strobe relationship.................................................... 46
8.13.2.2
READ Timing; Data Strobe to Data relationship ..................................................... 47
8.13.2.3
tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation ............................................. 48
8.13.2.4
tRPRE Calculation .................................................................................................. 49
8.13.2.5
tRPST Calculation .................................................................................................. 49
8.13.2.6
Burst Read Operation followed by a Precharge...................................................... 55
WRITE Operation ................................................................................................................................ 57
8.14.1
DDR3L Burst Operation ................................................................................................... 57
8.14.2
WRITE Timing Violations ................................................................................................. 57
8.14.2.1
Motivation ............................................................................................................... 57
8.14.2.2
Data Setup and Hold Violations .............................................................................. 57
8.14.2.3
Strobe to Strobe and Strobe to Clock Violations..................................................... 57
8.14.2.4
Write Timing Parameters ........................................................................................ 57
8.14.3
Write Data Mask............................................................................................................... 58
8.14.4
tWPRE Calculation........................................................................................................... 59
8.14.5
tWPST Calculation ........................................................................................................... 59
Refresh Command .............................................................................................................................. 66
Self-Refresh Operation ....................................................................................................................... 68
Power-Down Modes ............................................................................................................................ 70
8.17.1
Power-Down Entry and Exit ............................................................................................. 70
8.17.2
Power-Down clarifications - Case 1 ................................................................................. 76
8.17.3
Power-Down clarifications - Case 2 ................................................................................. 76
8.17.4
Power-Down clarifications - Case 3 ................................................................................. 77
ZQ Calibration Commands .................................................................................................................. 78
8.18.1
ZQ Calibration Description ............................................................................................... 78
8.18.2
ZQ Calibration Timing ...................................................................................................... 79
8.18.3
ZQ External Resistor Value, Tolerance, and Capacitive loading ...................................... 79
On-Die Termination (ODT) .................................................................................................................. 80
8.19.1
ODT Mode Register and ODT Truth Table ...................................................................... 80
8.19.2
Synchronous ODT Mode .................................................................................................. 81
8.19.2.1
ODT Latency and Posted ODT ............................................................................... 81
8.19.2.2
Timing Parameters ................................................................................................. 81
8.19.2.3
ODT during Reads.................................................................................................. 83
8.19.3
Dynamic ODT .................................................................................................................. 84
8.19.3.1
Functional Description: ........................................................................................... 84
8.19.3.2
ODT Timing Diagrams ............................................................................................ 85
8.19.4
Asynchronous ODT Mode ................................................................................................ 89
8.10
8.11
8.12
8.13
8.14
8.15
8.16
8.17
8.18
8.19
Publication Release Date: Apr. 10, 2019
Revision: A02
-2-
W632GU6NB
8.19.4.1
8.19.4.2
8.19.4.3
8.19.4.4
low periods
9.
9.1
9.2
9.3
10.
Synchronous to Asynchronous ODT Mode Transitions .......................................... 90
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry .. 90
Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit..... 93
Asynchronous to Synchronous ODT Mode during short CKE high and short CKE
94
OPERATION MODE ........................................................................................................................... 95
Command Truth Table ........................................................................................................................ 95
CKE Truth Table ................................................................................................................................. 97
Simplified State Diagram ..................................................................................................................... 98
ELECTRICAL CHARACTERISTICS ................................................................................................... 99
10.1 Absolute Maximum Ratings ................................................................................................................ 99
10.2 Operating Temperature Condition ....................................................................................................... 99
10.3 DC & AC Operating Conditions ........................................................................................................... 99
10.3.1
Recommended DC Operating Conditions ........................................................................ 99
10.4 Input and Output Leakage Currents .................................................................................................. 100
10.5 Interface Test Conditions .................................................................................................................. 100
10.6 DC and AC Input Measurement Levels ............................................................................................. 101
10.6.1
DC and AC Input Levels for Single-Ended Command and Address Signals .................. 101
10.6.2
DC and AC Input Levels for Single-Ended Data Signals ................................................ 101
10.6.3
Differential swing requirements for clock (CK - CK#) and strobe (DQS - DQS#) ........... 103
10.6.4
Single-ended requirements for differential signals ......................................................... 104
10.6.5
Differential Input Cross Point Voltage ............................................................................ 105
10.6.6
Slew Rate Definitions for Single-Ended Input Signals .................................................... 106
10.6.7
Slew Rate Definitions for Differential Input Signals ........................................................ 106
10.7 DC and AC Output Measurement Levels .......................................................................................... 107
10.7.1
Output Slew Rate Definition and Requirements ............................................................. 107
10.7.1.1
Single Ended Output Slew Rate ........................................................................... 108
10.7.1.2
Differential Output Slew Rate ............................................................................... 109
10.8 Output Driver DC Electrical Characteristics ...................................................................................... 110
10.8.1
Output Driver Temperature and Voltage sensitivity ........................................................ 112
10.9 On-Die Termination (ODT) Levels and Characteristics ..................................................................... 113
10.9.1
ODT Levels and I-V Characteristics ............................................................................... 113
10.9.2
ODT DC Electrical Characteristics ................................................................................. 114
10.9.3
ODT Temperature and Voltage sensitivity ..................................................................... 114
10.9.4
Design guide lines for RTT
PU
and RTT
PD
....................................................................... 115
10.10
ODT Timing Definitions............................................................................................................ 116
10.10.1
Test Load for ODT Timings ............................................................................................ 116
10.10.2
ODT Timing Definitions .................................................................................................. 116
10.11
Input/Output Capacitance ........................................................................................................ 120
10.12
Overshoot and Undershoot Specifications............................................................................... 121
10.12.1
AC Overshoot /Undershoot Specification for Address and Control Pins: ....................... 121
10.12.2
AC Overshoot /Undershoot Specification for Clock, Data, Strobe and Mask Pins: ........ 121
10.13
IDD and IDDQ Specification Parameters and Test Conditions ................................................ 122
10.13.1
IDD and IDDQ Measurement Conditions ....................................................................... 122
10.13.2
IDD Current Specifications ............................................................................................. 132
10.14
Clock Specification .................................................................................................................. 133
10.15
Speed Bins .............................................................................................................................. 134
10.15.1
DDR3L-1333 Speed Bin and Operating Conditions ....................................................... 134
10.15.2
DDR3L-1600 Speed Bin and Operating Conditions ....................................................... 135
10.15.3
DDR3L-1866 Speed Bin and Operating Conditions ....................................................... 136
Publication Release Date: Apr. 10, 2019
Revision: A02
-3-
W632GU6NB
DDR3L-2133 Speed Bin and Operating Conditions ....................................................... 137
Speed Bin General Notes .............................................................................................. 138
10.16
AC Characteristics ................................................................................................................... 139
10.16.1
AC Timing and Operating Condition for -09/09I/09J/-11/11I/11J speed grades ............. 139
10.16.2
AC Timing and Operating Condition for -12/12I/12J/-15/15I/15J speed grades ............. 143
10.16.3
Timing Parameter Notes ................................................................................................ 147
10.16.4
Address / Command Setup, Hold and Derating ............................................................. 150
10.16.5
Data Setup, Hold and Slew Rate Derating ..................................................................... 157
11.
11.1
11.2
11.3
11.4
12.
13.
Backward Compatible to 1.5V DDR3 SDRAM VDD/VDDQ Requirements ....................................... 159
Input/Output Functional ..................................................................................................................... 159
Recommended DC Operating Conditions - DDR3L (1.35V) operation.............................................. 159
Recommended DC Operating Conditions - DDR3 (1.5V) operation.................................................. 159
VDD/VDDQ Voltage Switch between DDR3L and DDR3.................................................................. 159
PACKAGE SPECIFICATION ............................................................................................................ 161
REVISION HISTORY ........................................................................................................................ 162
10.15.4
10.15.5
Publication Release Date: Apr. 10, 2019
Revision: A02
-4-
W632GU6NB
1. GENERAL DESCRIPTION
The W632GU6NB is a 2G bits DDR3L SDRAM, organized as 16,777,216 words
8 banks
16 bits.
This device achieves high speed transfer rates up to 2133 MT/s (DDR3L-2133) for various
applications. This device is sorted into the following speed grades: -09, -11, -12, -15, 09I, 11I, 12I, 15I,
09J, 11J, 12J and 15J.
The -09 ,09I and 09J speed grades are compliant to the DDR3-2133L (14-14-14) specification (The
09I industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 09J industrial plus
grade which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The -11 ,11I and 11J speed grades are compliant to the DDR3L-1866 (13-13-13) specification (The
11I industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 11J industrial plus
grade which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The -12, 12I and 12J speed grades are compliant to the DDR3L-1600 (11-11-11) specification (The
12I industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 12J industrial plus
grade which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The -15, 15I and 15J speed grades are compliant to the DDR3L-1333 (9-9-9) specification (The 15I
industrial grade which is guaranteed to support -40°C ≤ T
CASE
≤ 95°C, the 15J industrial plus grade
which is guaranteed to support -40°C ≤ T
CASE
≤ 105°C).
The W632GU6NB is designed to comply with the following key DDR3L SDRAM features such as
posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and
asynchronous reset. All of the control and address inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and
CK# falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous
fashion.
2. FEATURES
Power Supply: 1.35V (typ.), V
DD
, V
DDQ
= 1.283V to 1.45V
Backward compatible to V
DD
, V
DDQ
= 1.5V ± 0.075V
Double Data Rate architecture: two data transfers per clock cycle
Eight internal banks for concurrent operation
8 bit prefetch architecture
CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14
Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-
The-Fly (OTF)
Programmable read burst ordering: interleaved or nibble sequential
Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
Edge-aligned with read data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge, data and data mask are referenced to both edges of
a differential data strobe pair (double data rate)
Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command,
address and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Publication Release Date: Apr. 10, 2019
Revision: A02
-5-
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