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GS8320Z18AGT-150IT

产品描述ZBT SRAM, 2MX18, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
产品类别存储    存储   
文件大小343KB,共23页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
下载文档 详细参数 全文预览

GS8320Z18AGT-150IT概述

ZBT SRAM, 2MX18, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

GS8320Z18AGT-150IT规格参数

参数名称属性值
厂商名称GSI Technology
包装说明LQFP,
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
其他特性IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE
JESD-30 代码R-PQFP-G100
长度20 mm
内存密度37748736 bit
内存集成电路类型ZBT SRAM
内存宽度18
功能数量1
端子数量100
字数2097152 words
字数代码2000000
工作模式SYNCHRONOUS
组织2MX18
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
座面最大高度1.6 mm
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
宽度14 mm
Base Number Matches1

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GS8320Z18/36AGT-400/375/333/250/200/150
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• RoHS-compliant 100-lead TQFP package available
36Mb Pipelined and Flow Through
Synchronous NBT SRAMs
400 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8320Z18/36AGT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS8320Z18/36AGT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Functional Description
The GS8320Z18/36AGT is a 36Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
-400
2.5
2.5
395
475
4.0
4.0
290
335
-375
2.5
2.66
390
455
4.2
4.2
275
320
-333
2.5
3.3
355
415
4.5
4.5
260
305
-250
2.5
4.0
280
335
5.5
5.5
235
270
-200
3.0
5.0
240
280
6.5
6.5
200
240
-150
3.8
6.7
205
230
7.5
7.5
190
220
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/23
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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