Bulletin I2402 rev. B 01/05
25RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
25A
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
25RIA
10 to 120
140 to 160
25
85
40
420
440
867
790
100 to 1200
110
- 65 to 125
25
85
40
398
415
795
725
1400 to 1600
Units
A
°C
A
A
A
A
2
s
A
2
s
V
µs
°C
Case Style
TO-208AA (TO-48)
www.irf.com
1
25RIA Series
Bulletin I2402 rev. B 01/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
10
20
40
60
25RIA
80
100
120
140
160
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage (1)
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak voltage (2)
V
150
300
500
700
900
1100
1300
1500
1700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
20
10
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2)
For voltage pulses with t
p
≤
5ms
On-state Conduction
25RIA
Parameter
I
T(AV)
I
T(RMS)
I
TSM
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
10 to 120
25
85
40
420
440
350
370
140 to 160
25
85
40
398
415
335
350
795
725
560
510
7950
0.99
Units
A
°C
A
A
Conditions
180° sinusoidal conduction
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
867
790
615
560
A
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
V
T(TO)1
Maximum I
2
√t
for fusing
Low level value of threshold
voltage
8670
0.99
A
2
√s
V
t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
1.40
10.1
5.7
1.15
11.73
10.05
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
1.70
---
---
1.80
130
200
V
I
pk
= 79 A, T
J
= 25°C
I
H
I
L
Maximum holding current
Latching current
mA
T
J
= 25°C. Anode supply 6V, resistive load,
2
www.irf.com
25RIA Series
Bulletin I2402 rev. B 01/05
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
≤
800V
V
DRM
≤
600V
180
V
DRM
≤
1000V
V
DRM
≤
1600V
t
gt
t
rr
t
q
Typical turn-on time
160
150
0.9
T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
Typical reverse recovery time
4
µs
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = -10A/µs
Typical turn-off time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs, V
R
= 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V-100W
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
200
A/µs
25RIA
Units
Conditions
T
J
= T
J
max., V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6µs, t
r
= 0.1µs max.
I
TM
= (2x rated di/dt) A
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
25RIA
100
Units Conditions
V/µs
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
300 (*)
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90.
Triggering
Parameter
P
GM
I
GM
-V
GM
Maximum peak gate power
25RIA
8.0
2.0
1.5
10
Units Conditions
W
A
V
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak negative
gate voltage
I
GT
DC gate current required
to trigger
90
60
35
mA
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 65°C
V
V
mA
V
T
J
= 25°C
T
J
= 125°C
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
V
GT
DC gate voltage required
to trigger
3.0
2.0
1.0
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
2.0
0.2
T
J
= T
J
max., V
DRM
= rated value
T
J
= T
J
max.
V
DRM
= rated value
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
www.irf.com
3
25RIA Series
Bulletin I2402 rev. B 01/05
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
25RIA
- 65 to 125
- 65 to 125
0.75
Units Conditions
°C
°C
K/W
DC operation
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Allowable mounting torque
0.35
K/W
Mounting surface, smooth, flat and greased
3.4
+0-10%
30
23
+0-10%
20
Nm
lbf-in
Nm
lbf-in
g (oz)
Non-lubricated threads
Lubricated threads
wt
Approximate weight
Case style
14 (0.49)
TO-208AA (TO-48)
See Outline Table
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.17
0.21
0.27
0.40
0.69
Rectangular conduction Units
0.13
0.22
0.30
0.42
0.70
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
25
1
RIA 160
2
3
M
4
S90
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M
= Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/µs (Standard value)
S90
= 1000V/µs (Special selection)
4
www.irf.com
25RIA Series
Bulletin I2402 rev. B 01/05
Outline Table
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
120
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
120
110
Conduction Angle
110
Conduction Period
100
30°
60°
90°
120°
180°
100
30°
60°
90°
120°
90
90
180°
DC
80
0
5
10
15
20
25
30
Average On-state Current (A)
80
0
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
www.irf.com
5
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
