Preliminary
TARF1510U
NPN Planer RF TRANSISTOR
SOT-323
unit : mm
□
DESCRIPTION
The TARF1510U is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT323 package
□
FEATURES
o Low Noise Figure
N.F = 1.5dB TYP. @ f=2GHz, V
CE
=3V, Ic=7mA
N.F = 1.7dB TYP. @ f=2GHz, V
CE
=1V, Ic=3mA
o High Gain
MAG = 9dB TYP. @ f=2GHz, V
CE
=3V, Ic=20mA
MAG = 6dB TYP. @ f=2GHz, V
CE
=1V, Ic=3mA
o High Transition Frequency
f
T
= 7GHz TYP. @ f=2GHz, V
CE
=3V, Ic=20mA
f
T
= 4GHz TYP. @ f=2GHz, V
CE
=1V, Ic=3mA
PIN CONFIGURATION
PIN NO
1
2
3
SYMBOL
B
E
C
DESCRIPTION
Base
Emitter
Collector
□
MARKING : AK1
□
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60℃
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
15
5.5
2.5
100
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
www.tachyonics.co.kr
- 1/12 -
Oct-2002
Preliminary
TARF1510U
□
Electrical Characteristics
( T
A
= 25
℃
)
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
PARAMETER
Collector-Base Voltage
CONDITION
min
I
CE
= 100uA, I
E
= 0
10
5
Collector-Emitter Voltage I
CE
= 100uA, I
B
= 0
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 3V, Ic = 15mA
V
CE
= 3V, Ic = 20mA
100
150
7
0.8
GHz
pF
VALUE
typ
25
5.5
300
100
max
V
V
nA
nA
Unit
f
T
C
CB
Collector-Base Capacitance
V
CB
= 10V, f = 1MHz
□
Performance Characteristics
SYMBOL
PARAMETER
CONDITION
min
V
CE
=3V, Ic=7mA,f=1GHz
[S21]
2
VALUE
typ
8.5
10
max
Unit
V
CE
=3V, Ic=20mA,f=1GHz
Insertion Power Gain
dB
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=3V, Ic=20mA,f=2GHz
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=3V, Ic=20mA,f=2GHz
3
4.5
8.5
9
dB
V
CE
=1V, Ic=3mA,f=2GHz
V
CE
=1V, Ic=10mA,f=2GHz
V
CE
=1V, Ic=3mA,f=2GHz
6
6.5
1.7
dB
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=1V, Ic=3mA,f=2GHz
1.5
0.06
0.07
7
7.5
dB
V
CE
=1V, Ic=3mA,f=2GHz
V
CE
=1V, Ic=10mA,f=2GHz
5.5
6
Ω
MAG
Maximum Available Gain
NFmin
Minium Noise Figure
rn
Noise Resistance
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=3V, Ic=20mA,f=2GHz
G
A
Associated Gain
www.tachyonics.co.kr
- 2/12 -
Oct-2002
Preliminary
TARF1510U
Power Gain : Gmax vs. Frequency
Power Gain : S
21
vs. Frequency
22
20
18
20
18
16
14
16
14
12
10
8
6
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
dB(S(2,1))
S21[dB]
Gmax [dB]
MaxGain1
12
10
8
6
4
V
CE
=3V
Icc=20mA
V
CE
=3V
Icc=20mA
V
CE
=1V
Icc=15mA
2
0
-2
0.0
0.5
V
CE
=1V
Icc=15mA
1.0
1.5
2.0
2.5
3.0
freq, GHz
freq, GHz
Power Gain : Gmax vs. Icc
16
Power Gain : Gmax vs. Icc
f = 1GHz
V
CE
=3V
14
10
f = 2GHz
V
CE
=3V
8
12
Gmax [dB]
V
CE
=2V
10
Gmax [dB]
6
V
CE
=2V
4
8
V
CE
=1V
2
V
CE
=1V
6
0
10
20
30
Icc [mA]
40
50
60
0
0
10
20
30
Icc [mA]
40
50
60
www.tachyonics.co.kr
- 4/12 -
Oct-2002
Preliminary
TARF1510U
Transition Frequency : f
T
vs. Icc
C
CB
vs. V
CB
10
9
8
7
6
5
4
3
2
1
0
0
10
20
30
Icc [mA]
40
50
60
2
f = 2GHz
V
CE
=3V
Capacitance C
CB
[pF]
1.6
f = 1MHz
1.2
f
T
[GHz]
V
CE
=2V
0.8
V
CE
=1V
0.4
0
0
3
6
V
CB
[V]
9
12
15
Fmin vs. Icc
V
CE
= 3V, Icc = parameter, Zs = Zsopt
3
Noise Figure Contours & Constant Gain
f = 1 GHz,
2GHz,
V
CE
= 3V, Icc = 7mA
Output Stable
2.5
f = 1GHz
Γ =0.378∠162
OPT
Fmin =1.05dB
=1.1dB
=1.2dB
3 contour
Fmin [dB]
2
f = 2GHz
Ga=10dB
=11dB
=12dB
3contour
1.5
Ga=8dB
=7dB
=6dB
3contour
Input Stable
0
5
10
15
Icc [mA]
20
25
30
1
f = 1GHz
f = 2GHz
Γ =0.623∠-154
OPT
Fmin =1.45dB
=1.5dB
=1.6dB
3 contour
0.5
www.tachyonics.co.kr
- 5/12 -
Oct-2002
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