IL400
Photo SCR Optocoupler
FEATURES
• Turn On Current (
I
FT
), 5.0 mA Typical
• Gate Trigger Current (
I
GT
), 20
µ
A
• Surge Anode Current, 1.0 Amp
• Blocking Voltage, 400 V
• Gate Trigger Voltage (
V
GT
), 0.6 Volt
• Isolation Voltage, 5300 V
RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
•
D
V
E
VDE Approval #0884
Available with Option 1
DESCRIPTION
The IL400 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while main-
taining a high degree of isolation between triggering
and load circuits. The IL400 can be used in SCR
triac and solid state relay applications where high
blocking voltages and low input current sensitivity
are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Peak Forward Current
(100
µ
s, 1% Duty Cycle) ................................ 1.0 A
Continuous Forward Current ........................... 60 mA
Power Dissipation at 25
°
C............................ 100 mW
Derate Linearly from 25
°
C ........................ 1.3 mW/
°
C
Detector
Reverse Gate Voltage........................................ 6.0 V
Anode Voltage (DC or AC Peak) ...................... 400 V
Anode Current ............................................... 100 mA
Surge Anode Current (10 ms duration) ............. 1.0 A
Surge Gate Current (5.0 ms duration) ........... 200 mA
Power Dissipation, 25
°
C ambient................. 200 mW
Derate Linearly from 25
°
C ...................... 2.11 mW/
°
C
Package
Isolation Voltage .......................................5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.............................min. 10
12
Ω
V
IO
=500 V,
T
A
=100
°
C...........................min. 10
11
Ω
Total Package Dissipation ............................ 250 mW
Derate Linearly from 25
°
C ...................... 2.63 mW/
°
C
Operating Temperature .................. –55
°
C to +100
°
C
Storage Temperature...................... –55
°
C to +150
°
C
Dimensions in Inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
NC 3
.300 (7.62)
typ.
4 Cathode
2
1
pin one ID
Anode 1
Cathode 2
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
6 Gate
5 Anode
Characteristics
T
A
=25
°
C
Symbol
Emitter
Forward Voltage
Reverse Voltage
Reverse Current
Detector
Forward Blocking
Voltage
Reverse Blocking
Voltage
Min.
Typ.
Max. Unit
Condition
V
F
V
R
I
R
V
DRM
V
DRRM
V
t
I
H
V
GT
I
D
I
R
I
GT
—
5.0
—
400
1.2
—
—
—
1.5
—
10
—
V
V
µ
A
V
I
F
=20 mA
I
R
=10
µ
A
V
R
=5.0 V
R
GK
=10 K
Ω
T
A
=100
°
C
Id=150
µ
A
R
GK
=10 K
Ω
T
A
=100
°
C
Id=150
µ
A
I
T
=100 mA
400
—
—
V
On-state Voltage
Holding Current
Gate Trigger
Voltage
Forward Leakage
Current
—
—
—
—
—
0.6
1.2
500
1.0
V
µ
A
V
R
GK
=27 K
Ω
V
FX
=50 V
V
FX
=100 V
R
GK
=27 K
Ω
R
L
=10 K
Ω
R
GK
=27 K
Ω
V
RX
=400 V
I
F
=0,
T
A
=25
°
C
R
GK
=27 K
Ω
V
RX
=400 V
I
F
=0,
T
A
=25
°
C
V
FX
=100 V
R
GK
=27 K
Ω
,
R
L
=10 K
Ω
V
FX
=100 V
R
GK
=27 K
Ω
f=1.0 MHz
—
0.2
2.0
µ
A
Reverse Leakage
Current
Gate Trigger
Current
Package
Turn-0n Current
Isolation
Capacitance
—
0.2
2.0
µ
A
—
20
50
µ
A
I
FT
—
0.5
—
5.0
—
10.0
2
mA
pF
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–141
February 24, 2000-21
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