TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
LEVELS
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N2369AUBC *
2N4449
JAN
JANTX
JANTXV
JANS
*
Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Total Power Dissipation @
T
A
= +25°C
2N2369A; 2N4449
UA, UB, UBC
U
2N2369A / U / UA
2N4449 / UB / UBC
2N2369A / U / UA
2N4449 / UB / UBC
Symbol
V
CEO
V
EBO
V
CBO
I
CES
P
T
T
op
, T
stg
Value
15
20
4.5
6.0
40
40
0.36
(1)
0.36
(1, 5)
0.50
(4)
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
W
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB)
Operating & Storage Junction Temperature Range
°C
2N4449
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
UA, UB, UBC
U
Note:
1.
2.
3.
4.
5.
Symbol
R
θJA
Value
400
400
(5)
350
Unit
°C/W
SURFACE MOUNT
UA
Derate linearly 2.06 mW°/C above T
A
= +25°C.
Derate linearly 4.76 mW°/C above T
C
= +95°C.
Derate linearly 3.08 mW°/C above T
C
= +70°C.
Derate linearly 3.44 mW°/C above T
A
= +54.5°C.
Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CE
= 20Vdc
T4-LDS-0057 Rev. 2 (081394)
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CES
15
0.4
Vdc
μAdc
SURFACE MOUNT
U (Dual Transistor)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
V
EB
= 4.5Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
Collector- Base Breakdown Voltage
V
CB
= 40Vdc
Collector-Base Cutoff Current
V
CB
= 32Vdc
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 10mAdc, V
CE
= 0.35Vdc
I
C
= 30mAdc, V
CE
= 0.4Vdc
I
C
= 10mAdc, V
CE
= 1.0Vdc
I
C
= 100mAdc, V
CE
= 1.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 30mAdc, I
B
= 3.0mAdc
I
C
= 100mAdc, I
B
= 10mAdc
Base-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 30mAdc, I
B
= 3.0mAdc
I
C
= 100mAdc, I
B
= 10mAdc
Symbol
Min.
Max.
Unit
I
EBO
10
0.25
10
0.2
μAdc
I
CBO
μAdc
h
FE
40
30
40
20
120
120
120
120
0.20
0.25
0.45
V
CE(sat)
Vdc
V
BE(sat)
0.70
0.80
0.85
0.90
1.20
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
I
C
= 10mAdc, V
CE
= 10Vdc, f = 100MHz
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
Symbol
|h
fe
|
C
obo
C
ibo
Min.
5.0
Max.
10
4.0
5.0
pF
pF
Unit
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I
C
= 10mAdc; I
B1
= 3.0mAdc, I
B2
= -1.5mAdc
Turn-Off Time
I
C
= 10mAdc; I
B1
= 3.0mAdc, I
B2
= -1.5mAdc
Charge Storage Time
I
C
= 10mAdc; I
B1
= 10mAdc, I
B2
= 10mAdc
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2.0%.
T4-LDS-0057 Rev. 2 (081394)
Page 2 of 2
Symbol
t
on
t
off
t
S
Min.
Max.
12
18
13
Unit
ηs
ηs
ηs
微控制器 MCU
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