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MXLSMBJSAC75E3

产品描述121V 夹子 4.1A Ipp TVS - 二极管 表面贴装型 SMBJ(DO-214AA)
产品类别电路保护    ESD 抑制器/TVS 二极管   
文件大小519KB,共7页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
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MXLSMBJSAC75E3概述

121V 夹子 4.1A Ipp TVS - 二极管 表面贴装型 SMBJ(DO-214AA)

MXLSMBJSAC75E3规格参数

参数名称属性值
类别
厂商名称Microchip(微芯科技)
系列Military, MIL-PRF-19500
包装散装
类型齐纳
单向通道1
电压 - 反向断态(典型值)75V
电压 - 击穿(最小值)83.3V
不同 Ipp 时电压 - 箝位(最大值)121V
电流 - 峰值脉冲 (10/1000µs)4.1A
功率 - 峰值脉冲500W
电源线路保护
应用通用
不同频率时电容30pF @ 1MHz
工作温度-65°C ~ 150°C(TJ)
安装类型表面贴装型
封装/外壳DO-214AA,SMB
供应商器件封装SMBJ(DO-214AA)
基本产品编号SMBJSAC75

文档预览

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MSMBG5.0A – MXLSMBG170CAe3,
MSMBJ5.0A – MXLSMBJ170CAe3
Available
600 Watt Surface Mount
Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
The MSMB 5.0A – MSMB 170CA series of surface mount 600 watt transient voltage suppressors
provide a selection of standoff voltages (Vwm) from 5.0 to 170 V. These high-reliability devices are
available in either unidirectional or bidirectional versions. The SMBG Gull-wing design in the DO-
215AA package is ideal for visible solder connections. The SMBJ
J-bend design in the DO-
214AA package allows for greater PC board mounting density.
It is available with SnPb or
RoHS compliant matte-tin plating.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High reliability devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Enhanced reliability screening in reference to MIL-PRF-19500 is also available.
Refer to
High Reliability Up-Screened Plastic Products Portfolio
for more details on the screening
options.
(See
part nomenclature
for all options.)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current (I
D
).
RoHS compliant versions available.
DO-215AA
Gull-wing Package
DO-214AA
J-bend Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & RF induced voltage pulses.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: MSB 5.0A to MSMB 120CA
Class 2: MSMB 5.0A to MSMB 60CA
Class 3: MSMB 5.0A to MSMB 30CA
Class 4: MSMB 5.0A to MSMB 15CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: MSMB 5.0A to MSMB 36CA
Class 2: MSMB 5.0A to MSMB 18CA
Also available in:
Commercial Grade
SMBJ5.0A – SMBJ170CAe3
T-18 package
(axial-leaded)
P6KE6.8A – P6KE200CAe3
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power Dissipation
10/1000us
(1)
Rated Average Power Dissipation
@ T
L
< 25 ºC
@ T
A
= 25 ºC
Unidirectional
T
clamping
(0 volts to V
(BR)
min)
Bidirectional
(3)
Forward Surge Current
Solder Temperature @ 10 s
Symbol
T
J
and
T
STG
R
ӨJL
R
ӨJA
P
PP
P
M(AV)
Value
-65 to +150
25
90
600
5
1.38
< 100
<5
100
260
o
o
Unit
o
C
C/W
C/W
W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
FS
T
SP
ps
ns
A (pk)
o
C
Notes:
1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see
pad layout
on last page).
2. With impulse repetition rate (duty factor) of 0.01 % or less (also
Figure 1 and 4).
3. Peak impulse of 8.3 ms half-sine wave (unidirectional only).
RF01000, Rev. C (1/4/13)
©2013 Microsemi Corporation
Page 1 of 7

 
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