DATASHEET
Photon Detection
C30737PH, CH, LH, MH and EH Series
Silicon Avalanche Photodiodes (APDs) for LIDAR, range finding
and laser meters – plastic, leadless ceramic and FR4 packages
Key Features
High gain at low bias voltage
Low breakdown voltage
Fast response, t
r
~ 200 ps for
high-speed applications
Low noise ~ 0.1pA/√ Hz
Optimized versions for high
responsivity and high bandwidth
Two standard diameters: 230µm
and 500µm
Built-in band-pass filter windows
NEW ultra-compact and low-
cost “MH” SMT package
“Tape-and-Reel” packaging
format for automated SMD
pick-and-place
Excelitas’ C30737 Series APDs are ideally suited to automotive LIDAR, laser meter, laser
range finding and area scanning applications, providing high responsivity in the 500 –
1000 nm range.
Applications
Automotive LIDAR
905nm range-finding devices
635nm and 650nm laser meters
Speed measurement
Area scanners for safety,
surveillance, automatic door
opening
Optical communication
3D laser scanning
Gesture recognition
The Excelitas C30737 series silicon avalanche photodiodes (APDs) provide
high responsivity between 500nm and 1000nm, as well as extremely fast
rise times at all wavelengths with a cut-off frequency >1 GHz for some
versions.
Standard versions of these APDs are available in two active area sizes:
230µm and 500µm diameter. They are offered in a metal TO-18 and
plastic T1-¾ through-hole packages (C30737EH and PH), in leadless
ceramic-carrier (LCC) surface-mount “side-looking” and “top-looking”
packages (C30737CH and LH), and in a surface-mount “top-looking”
leadless FR4 package (C30737MH). The EH and LH packages comes with
clear glass or built-in 635nm, 650nm, or 905nm filter window versions.
The MH package is only 1.75 x 2.0mm. These package varieties are ideally
suited for high volume, cost-effective applications where a high gain APD is
required.
The leadless, ceramic-carrier (LCC) SMD package parts (C30737CH, LH and
MH series) are available in tape-and-reel pack for SMT-compatible, RoHS-
compliant reflow soldering.
Customizations of these APDs are offered to meet your design challenges.
Options for these APDs include breakdown voltage selection (binning).
www.excelitas.com
Page 1 of 14
C30737PH-CH-LH-MH-EH-Rev.2017-10
C30737PH, CH, LH, MH and EH Series
Epitaxial Silicon Avalanche Photodiodes – Through-hole and Leadless SMT
packages
Table 1. Electrical Characteristics at T
A
= 22 °C; at operating voltage-V
op
– unfiltered devices
C30737PH-230-80
C30737CH-230-80
C30737LH-230-80
C30737MH-230-80
C30737EH-230-80
Min
Typical
Max
230
800
120
-
-
-
-
-
-
-
-
-50
-40
0.5
100
50
0.05
0.1
1
0.2
1.5
210
-
-
-
0.5
-
-
-
-
+100
+85
120
-
-
-
-
-
-
-
-
-50
-40
0.5
100
50
0.1
0.1
2
0.3
1.3
Parameter
C30737PH-500-80
C30737CH-500-80
C30737LH-500-80
C30737MH-500-80
C30737EH-500-80
Min
Typical Max
500
800
210
-
-
-
1
-
-
-
-
+100
+85
Unit
μm
nm
V
V/°C
Active Area Diameter
Peak Sensitivity Wavelength
Breakdown Voltage, V
BR
Temperature Coefficient
of V
R
, for Constant M
Gain (M) @ 800nm
Responsivity @ 800 nm
Total Dark Current, I
d
Noise Current, I
n, f=10kHz, Δf=1.0Hz
Capacitance, C
d
Rise + Fall Time,
R
L
=50 Ω, 10%-90%-10% points
Cut-off frequency (-3 dB)
Storage Temperature
Operating Temperature
A/W
nA
pA/√Hz
pF
ns
GHz
°C
°C
Parameter
C30737PH-230-90
C30737CH-230-90
C30737LH-230-90
C30737MH-230-90
C30737EH-230-90
Min
Typical
Max
230
900
180
1.3
-
55
-
-
-
-
-
-50
-40
100
60
0.05
0.1
0.6
0.9
380
-
-
0.5
-
-
-
-
+100
+85
260
C30737PH-500-90
C30737CH-500-90
C30737LH-500-90
C30737MH-500-90
C30737EH-500-90
Min
Typical Max
500
900
180
1.3
100
60
0.1
0.1
1
0.9
-
-50
-40
380
260
Unit
μm
nm
V
V/°C
Active Area Diameter
Peak Sensitivity Wavelength
Breakdown Voltage, V
BR
Temperature Coefficient
of V
R
, for Constant M
Gain (M) @ 900 nm
Responsivity @ 900 nm
Total Dark Current, I
d
Noise Current, i
n, f=10kHz, Δf=1.0Hz
Capacitance, C
d
Rise & Fall Time,
R
L
=50 Ω, 10%-90%-10% points
Cut-off frequency (-3 dB)
Storage Temperature
Operating Temperature
55
-
-
1
-
-
-
-
+100
+85
A/W
nA
pA/√Hz
pF
ns
MHz
°C
°C
www.excelitas.com
Page 2 of 14
C30737PH-CH-LH-MH-EH-Rev.2017-10
C30737PH, CH, LH, MH and EH Series
Epitaxial Silicon Avalanche Photodiodes – Through-hole and Leadless SMT
packages
Table 2. Electrical Characteristics at T
A
= 22 °C; at operating voltage-V
op
– devices with optical bandpass
filters
C30737LH-230-81
(635nm filter #1)
Min
Active Area Diameter
Peak Sensitivity Wavelength
Breakdown Voltage, V
BR
Temperature Coefficient
of V
R
, for Constant M
Gain (M) @ 635 nm
Responsivity @ 635 nm
Total Dark Current, I
d
Noise Current, i
n, f=10kHz, Δf=1.0Hz
Capacitance, C
d
Rise & Fall Time,
R
L
=50 Ω, 10%-90%-10% points
Cut-off frequency (-3 dB)
Storage Temperature
Operating Temperature
Parameter
C30737LH-500-81
(635nm filter #1)
Max
Min
Typical
500
635
210
120
-
-
-
-
-
-
-
-
-50
-40
0.5
100
35
0.1
0.1
2
0.3
1.3
210
-
-
-
1
-
-
-
-
+100
+85
Typical
230
635
Max
Unit
μm
nm
V
V/°C
120
-
-
-
-
-
-
-
-
-50
-40
0.5
100
35
0.05
0.1
1
0.2
1.5
-
-
-
0.5
-
-
-
-
+100
+85
A/W
nA
pA/√Hz
pF
ns
GHz
°C
°C
Parameter
C30737LH-230-92
C30737EH-230-92
(905nm filter #2)
Min
Typical
Max
230
905
180
1.3
-
55
-
-
-
-
-
-50
-40
100
60
0.05
0.1
0.6
0.9
380
-
-
0.5
-
-
-
-
+100
+85
260
C30737LH-500-92
C30737EH-500-92
(905nm filter #2)
Min
Typical Max
500
905
180
1.3
100
60
0.1
0.1
1
0.9
380
260
Unit
μm
nm
V
V/°C
Active Area Diameter
Peak Sensitivity Wavelength
Breakdown Voltage, V
BR
Temperature Coefficient
of V
R
, for Constant M
Gain (M) @ 900nm
Responsivity @ 900 nm
Total Dark Current, I
d
Noise Current, i
n, f=10kHz, Δf=1.0Hz
Capacitance, C
d
Rise & Fall Time,
R
L
=50 Ω, 10%-90%-10% points
Cut-off frequency (-3 dB)
Storage Temperature
Operating Temperature
55
-
-
-
-
-50
-40
1
-
-
-
-
+100
+85
A/W
nA
pA/√Hz
pF
ns
MHz
°C
°C
www.excelitas.com
Page 3 of 14
C30737PH-CH-LH-MH-EH-Rev.2017-10
C30737PH, CH, LH, MH and EH Series
Epitaxial Silicon Avalanche Photodiodes – Through-hole and Leadless SMT
packages
Parameter
Min
Active Area Diameter
Peak Sensitivity Wavelength
Breakdown Voltage, V
BR
Temperature Coefficient
of V
R
, for Constant M
Gain (M) @ 650 nm
Responsivity @ 650 nm
Total Dark Current, I
d
Noise Current, i
n, f=10kHz, Δf=1.0Hz
Capacitance, C
d
Rise & Fall Time,
R
L
=50 Ω, 10%-90%-10% points
Cut-off frequency (-3 dB)
Storage Temperature
Operating Temperature
C30737LH-230-83
(650nm filter #3)
Typical
230
650
120
-
-
-
-
-
-
-
-
-50
-40
0.5
100
35
0.05
0.1
1
0.2
1.5
210
-
-
-
0.5
-
-
-
-
+100
+85
C30737LH-500-83
(650nm filter #3)
Max
Min
Typical
500
650
120
-
-
-
-
-
-
-
-
-50
-40
0.5
100
35
0.1
0.1
2
0.3
1.3
210
-
-
-
1
-
-
-
-
+100
+85
Max
Unit
μm
nm
V
V/°C
A/W
nA
pA/√Hz
pF
ns
GHz
°C
°C
Table 3. Filter Transmission Characteristics
Filter #
Nominal center wavelength
Transmission window
50% cut-on wavelength
50% cut-off wavelength
Average transmission from
300 nm to bandpass region
Average transmission from
bandpass region to 1100 nm
Wavelength drift
Typical filter thickness
Notes:
1.
2.
3.
The 635nm filter is designed to work optimally with the 635nm red laser commonly used in laser meters or laser pointers.
The 905nm filter is designed to work optimally with the Excelitas 905nm Pulse Laser Diodes PGEW and PGA series.
The 650nm filter is designed to work optimally with the 650nm red laser commonly used in laser meters or laser pointers.
1
635nm
note 1
2
905nm
note 2
3
650nm
note 3
Transmission ≥ 85%
Transmission ≥ 85%
623…652nm
606…617nm
657…669nm
<1% @
<593nm
<1% @
>682nm
<+0.5nm/°C
0.3mm
870…890nm
929…949nm
<1% @
<850nm
<1% @
>979nm
<+0.5nm/°C
0.3mm
638…669nm
622…634nm
673...685nm
<1% @
<608nm
<1% @
>699nm
<+0.5nm/°C
0.3mm
for range -10°C…+50°C
Material: Borosilicate glass
www.excelitas.com
Page 4 of 14
C30737PH-CH-LH-MH-EH-Rev.2017-10
C30737PH, CH, LH, MH and EH Series
Epitaxial Silicon Avalanche Photodiodes – Through-hole and Leadless SMT
packages
Typical Responsivity vs. wavelength.
800nm PSW = APD with 800nm peak sensitivity wavelength; 900nm PSW = APD with 900nm peak sensitivity
wavelength
Spectral Response
70
800nm PSW
900nm PSW
60
Responsivity (A/W)
50
40
30
20
10
0
Wavelength (nm)
Figure 2
Typical capacitance vs. bias voltage
Capacitance vs. Bias Voltage
100
230um Active, 800nm PSW
500um Active, 800nm PSW
230um Active, 900nm PSW
10
500um Active, 900nm PSW
Capacitance (pF)
1
0.1
0
20
40
60
80
100
120
140
Bias voltage (V)
www.excelitas.com
Page 5 of 14
C30737PH-CH-LH-MH-EH-Rev.2017-10
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