EVALUATION KIT AVAILABLE

MAX17600–MAX17605

4A Sink/Source Current,

12ns, Dual MOSFET Drivers

General Description

The MAX17600–MAX17605 devices are high-speed

MOSFET drivers capable of sinking /sourcing 4A peak

currents. The devices have various inverting and non-

inverting part options that provide greater flexibility in

controlling the MOSFET. The devices have internal

logic circuitry that prevents shoot-through during output-

state changes. The logic inputs are protected against

voltage spikes up to +14V, regardless of V

DD

volt-

age. Propagation delay time is minimized and matched

between the dual channels. The devices have very fast

switching time, combined with short propagation delays

(12ns typ), making them ideal for high-frequency circuits.

The devices operate from a +4V to +14V single power

supply and typically consume 1mA of supply current. The

MAX17600/MAX17601 have standard TTL input logic

levels, while the MAX17603 /MAX17604/MAX17605 have

CMOS-like high-noise margin (HNM) input logic levels.

The MAX17600/MAX17603 are dual inverting input driv-

ers, the MAX17601/MAX17604 are dual noninverting

input drivers, and the MAX17602/MAX17605 devices

have one noninverting and one inverting input. These

devices are provided with enable pins (ENA, ENB) for

better control of driver operation.

These devices are available in 8-pin (3mm x 3mm) TDFN,

8-pin (3mm x 5mm) µMAX

®

, and 8-pin SO packages and

operate over the -40°C to +125°C temperature range.

Features

●

Dual Drivers with Enable Inputs

●

+4V to +14V Single Power-Supply Range

●

4A Peak Sink /Source Current

●

Inputs Rated to +14V, Regardless of V

DD

Voltage

●

Low 12ns Propagation Delay

●

6ns Typical Rise and 5ns Typical Fall Times with

1nF Load

●

Matched Delays Between Channels

●

Parallel Operation of Dual Outputs for Larger

Driver Output Current

●

TTL or HNM Logic-Level Inputs with Hysteresis for

Noise Immunity

●

Low Input Capacitance: 10pF (typ)

●

Thermal Shutdown Protection

● TDFN, μMAX, and SO Package Options

●

-40°C to +125°C Operating Temperature Range

Typical Operating Circuit

V

DD

ENA

V

DD

OUTA

ENB

(UP TO +14V)

Applications

●

Power MOSFET Switching

Switch-Mode Power Supplies

DC-DC Converters

Motor Control

Power-Supply Modules

INA

INB

MAX17600

MAX17601

MAX17602

MAX17603

MAX17604

MAX17605

OUTB

GND

Ordering Information

appears at end of data sheet.

μMAX is a registered trademark of Maxim Integrated

Products, Inc.

19-6177; Rev 2; 6/17

MAX17600–MAX17605

4A Sink/Source Current,

12ns, Dual MOSFET Drivers

Absolute Maximum Ratings

V

DD

, INA, INB, ENA, ENB to GND .......................-0.3V to +16V

OUTA, OUTB to GND............................................-0.3V to +16V

Junction Operating Temperature Range .......... -40°C to +125°C

Continuous Power Dissipation (T

A

= +70°C)

8-Pin TDFN (derate 23.8mW/°C above +70°C) ........1904mW

8-Pin SO (derate 74mW/°C above +70°C)............. 588.2mW*

8-Pin µMAX (derate 12.9mW/°C above +70°C) .....1030.9mW

*As per JEDEC 51 standard.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these

or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Operating Temperature Range ......................... -40°C to +125°C

Junction Temperature ......................................................+150°C

Storage Temperature Range ............................ -65°C to +150°C

Lead Temperature (soldering, 10s) ................................. +300°C

Soldering Temperature (reflow) .......................................+240°C

Package Information

PACKAGE TYPE: 8 TDFN

Package Code

Outline Number

Land Pattern Number

THERMAL RESISTANCE, FOUR-LAYER BOARD

Junction to Ambient (θ

JA

)

Junction to Case (θ

JC

)

PACKAGE TYPE: 8 SO

Package Code

Outline Number

Land Pattern Number

THERMAL RESISTANCE, FOUR-LAYER BOARD

Junction to Ambient (θ

JA

)

Junction to Case (θ

JC

)

PACKAGE TYPE: 8 µMAX

Package Code

Outline Number

Land Pattern Number

THERMAL RESISTANCE, FOUR-LAYER BOARD

Junction to Ambient (θ

JA

)

Junction to Case (θ

JC

)

77.6°C/W

5°C/W

U8E+2

21-0107

90-0145

136°C/W

38°C/W

S8+2

21-0041

90-0096

42°C/W

8°C/W

T833+2

21-0137

90-0059

For the latest package outline information and land patterns (footprints), go to

www.maximintegrated.com/packages.

Note that a “+”,

“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing

pertains to the package regardless of RoHS status.

Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board.

For detailed information on package thermal considerations, refer to

www.maximintegrated.com/thermal-tutorial.

www.maximintegrated.com

Maxim Integrated

│

2

MAX17600–MAX17605

4A Sink/Source Current,

12ns, Dual MOSFET Drivers

Electrical Characteristics

(V

DD

= 12V, C

L

= 0F, at T

A

= -40°C to +125°C, unless otherwise noted. Typical values are specified at T

A

= +25°C. Parameters

specified at V

DD

= 4V apply to the TTL versions only.) (Note 1)

PARAMETER

POWER SUPPLY (V

DD

)

V

DD

Operating Range

V

DD

Undervoltage Lockout

V

DD

UVLO Hysteresis

V

DD

UVLO to OUT_ Delay

IDD_Q

V

DD

Supply Current

IDD_SW

V

DD

rising

Not switching, V

DD

= 14V (Note 2)

V

DD

= 4.5V, C

L

= 1nF, both channels

switching at 1MHz

V

DD

= 14V, C

L

= 10nF (Note 2)

V

DD

= 14V, I

OUT_

= 100mA

V

DD

= 4V, I

OUT_

= 100mA

V

DD

= 14V, C

L

= 10nF (Note 2)

V

DD

= 14V, I

OUT_

= -100mA

V

DD

= 4V, I

OUT_

= -100mA

MAX17600/1/2

MAX17603/4/5

MAX17600/1/2

MAX17603/4/5

MAX17600/1/2

MAX17603/4/5

V

INA

= V

INB

= 0V or V

DD

(MAX17600/1/2)

V

INA

= V

INB

= 0V or V

DD

(MAX17603/4/5)

(Note 2)

-1

0.34

0.9

+0.02

10

+1

2.1

4.25

0.8

2.0

V

DD

UVLO

TTL versions

HNM versions

V

DD

rising

4

6

3

3.5

200

120

1

12

2

18

mA

14

3.85

V

mV

µs

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

DRIVER OUTPUT (SOURCE) (OUTA, OUTB)

Peak Output Current (Sourcing)

Driver Output Resistance Pulling Up

(Note 3)

I

PK-P

R

ON-P

4

0.88

0.91

4

0.5

0.52

0.95

1

1.85

1.95

A

Ω

DRIVER OUTPUT (SINK) (OUTA, OUTB)

Peak Output Current (Sinking)

Driver Output Resistance Pulling

Down (Note 3)

LOGIC INPUT (INA, INB)

V

IN_

Logic-High Input Voltage

V

IN_

Logic-Low Input Voltage

Logic Input Hysteresis

Logic Input Leakage Current

Logic Input Bias Current

Logic Input Capacitance

V

IH

V

IL

V

HYS

I

LKG

I

BIAS

C

IN

V

µA

pF

I

PK-N

R

ON-N

A

Ω

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Maxim Integrated

│

3

MAX17600–MAX17605

4A Sink/Source Current,

12ns, Dual MOSFET Drivers

Electrical Characteristics (continued)

(V

DD

= 12V, C

L

= 0F, at T

A

= -40°C to +125°C, unless otherwise noted. Typical values are specified at T

A

= +25°C. Parameters

specified at V

DD

= 4V apply to the TTL versions only.) (Note 1)

PARAMETER

ENABLE (ENA, ENB)

V

EN_H

High Level Voltage

V

EN_L

Low Level Voltage

Enable Hysteresis

Enable Pullup Resistor to V

DD

Propagation Delay from EN_ to OUT_

(Note 2)

EN_

HYS

R

pu

t

pd

MAX17600/1/2

MAX17603/4/5

MAX17600/1/2

MAX17603/4/5

MAX17600/1/2

MAX17603/4/5

MAX17600/1/2

MAX17603/4/5

EN_ rising

EN_ falling

C

L

= 1nF

OUT_ Rise Time

t

R

C

L

= 4.7nF

C

L

= 10nF

C

L

= 1nF

OUT_ Fall Time

Turn-On Delay Time

Turn-Off Delay Time

t

F

t

D-ON

t

D-OFF

C

L

= 4.7nF

C

L

= 10nF

C

L

= 1nF

C

L

= 1nF

C

L

= 1nF

OUT_ Rise Time

t

R

C

L

= 4.7nF

C

L

= 10nF

C

L

= 1nF

OUT_ Fall Time

Turn-On Delay Time

Turn-Off Delay Time

Matching Propagation Delays

Between Channel A and Channel B

t

F

t

D-ON

t

D-OFF

C

L

= 4.7nF

C

L

= 10nF

C

L

= 1nF

C

L

= 1nF

50

100

0.34

0.9

100

200

7

6

20

40

6

16

25

12

5

15

28

5

10

18

12

ns

200

400

2.1

4.25

0.8

2.0

V

kΩ

ns

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

SWITCHING CHARACTERISTICS (V

DD

= 14V) (Note 2)

SWITCHING CHARACTERISTICS (V

DD

= 4.5V) (Note 2)

MATCHING CHARACTERISTICS (Note 2)

V

DD

= 14V, C

L

= 10nF

8

ns

Note 1:

All devices are production tested at T

A

= +25°C. Limits over temperature are guaranteed by design.

Note 2:

Design guaranteed by bench characterization. Limits are not production tested.

Note 3:

For SOIC,

μMAX

package options, these are only Typ parameters.

www.maximintegrated.com

Maxim Integrated

│

4

MAX17600–MAX17605

4A Sink/Source Current,

12ns, Dual MOSFET Drivers

Typical Operating Characteristics

(C

L

= 1nF, T

A

= +25°C, unless otherwise noted.)

MAX17600 toc01

5.5

5.0

RISE TIME (ns)

4.5

4.0

3.5

3.0

2.5

2.0

4

T

A

= 0°C

6

8

T

A

= -40°C

10

12

T

A

= +125°C

T

A

= +85°C

T

A

= +25°C

4.5

4.0

FALL TIME (ns)

3.5

3.0

2.5

2.0

T

A

= 0°C

4

6

8

T

A

= -40°C

T

A

= +125°C

T

A

= +25°C

T

A

= +85°C

14

1.5

10

12

14

SUPPLY VOLTAGE, V

DD

(V)

SUPPLY VOLTAGE, V

DD

(V)

MAX17600 toc03

PROPAGATION DELAY TIME (ns)

16

14

12

10

8

PROPAGATION DELAY TIME (ns)

T

A

= +125°C

16

14

12

T

A

= 0°C

10

8

T

A

= -40°C

T

A

= +85°C

T

A

= +25°C

T

A

= +125°C

T

A

= +85°C

T

A

= +25°C

T

A

= 0°C

4

6

8

10

T

A

= -40°C

12

14

4

6

8

10

12

14

SUPPLY VOLTAGE, V

DD

(V)

SUPPLY VOLTAGE, V

DD

(V)

MAX17600 toc05

SUPPLY CURRENT (mA)

2.0

1.5

1.0

500kHz

SUPPLY CURRENT (mA)

2.5

1MHz

500kHz

1MHz

NO

SWITCHING

100kHz

NO SWITCHING

0.5

4

6

8

10

12

14

0

1

2

3

4

5

6

7

8

9

10

SUPPLY VOLTAGE, V

DD

(V)

LOAD CAPACITANCE (nF)

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Maxim Integrated

│

5

MAX17600 toc06

3.0

SUPPLY CURRENT vs. SUPPLY VOLTAGE

(C

OUT_

= 0nF)

140

130

120

110

100

90

80

70

60

50

40

30

20

10

0

SUPPLY CURRRENT vs. LOAD CAPACITANCE

(V

DD

= 12V, C

OUTB

= 0nF)

MAX17600 toc04

18

PROPAGATION DELAY TIME (LOW TO HIGH)

vs. SUPPLY VOLTAGE (C

OUT_

= 1nF)

18

PROPAGATION DELAY TIME (HIGH TO LOW)

vs. SUPPLY VOLTAGE (C

OUT_

= 1nF)

MAX17600 toc02

6.0

RISE TIME vs. SUPPLY VOLTAGE

(C

OUT_

= 1nF)

5.0

FALL TIME vs. SUPPLY VOLTAGE

(C

OUT_

= 1nF)

参数名称	属性值
类别
厂商名称	ADI(亚德诺半导体)
包装	卷带（TR）剪切带（CT）
驱动配置	低端
通道类型	独立式
驱动器数	2
栅极类型	IGBT，SiC MOSFET
电压 - 供电	4V ~ 14V
逻辑电压 - VIL，VIH	2V，4.25V
电流 - 峰值输出（灌入，拉出）	4A，4A
输入类型	反相，非反相
上升/下降时间（典型值）	40ns，25ns
工作温度	-40°C ~ 150°C（TJ）
安装类型	表面贴装型
封装/外壳	8-WDFN 裸露焊盘
供应商器件封装	8-TDFN（3x3）
基本产品编号	MAX17605

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