CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 50Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
R
θJC
I
EC
= 7A
I
EC
= 7A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
IGBT
Diode
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±25V
T
J
= 150
o
C, R
G
= 50Ω,
V
GE
= 15V, L = 1mH
V
CE(PK)
= 480V
V
CE(PK)
= 600V
V
GE
= 15V
V
GE
= 20V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
MIN
600
-
-
-
-
3.0
-
40
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
1.6
1.9
5.0
-
-
-
8
23
30
8.5
11.5
350
140
165
600
1.9
25
18
-
-
MAX
-
250
2.0
2.0
2.4
6.0
±250
-
-
-
30
38
-
-
400
275
-
-
2.5
37
30
2.1
2.0
UNITS
V
µA
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
V
ns
ns
o
C/W
o
C/W
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
T
J
= 150
o
C
I
CE
= I
C110
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 50Ω
L = 1mH
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
2
HGTP7N60C3D, HGT1S7N60C3DS
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40 DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
35
30
25
20
15
10
5
0
4
6
8
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
35 T
C
= 25
o
C
30
25
V
GE
= 15.0V
20
15
8.5V
10
8.0V
5
0
0
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7.5V
7.0V
10
9.0V
12.0V
10.0V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
35
30
25
20
15
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
40
35
30
25
20
15
10
5
0
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= -40
o
C
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
T
C
= 150
o
C
T
C
= 25
o
C
5
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
V
CE
= 360V, R
G
= 50Ω, T
J
= 125
o
C
12
10
I
SC
8
120
9
100
6
6
80
3
4
t
SC
2
10
11
12
13
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
40
15
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
V
GE
= 15V
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
I
CE
, DC COLLECTOR CURRENT (A)
15
12
140
HGTP7N60C3D, HGT1S7N60C3DS
Typical Performance Curves
50
t
d(ON)I
, TURN-ON DELAY TIME (ns)
40
30
(Continued)
500
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
450
400
350
V
GE
= 10V or 15V
300
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
20
V
GE
= 10V
V
GE
= 15V
10
250
5
2
5
8
11
14
17
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
2
8
11
14
17
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
20
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR
TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
t
fI
, FALL TIME (ns)
300
250
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
t
rI
, TURN-ON RISE TIME (ns)
100
200
V
GE
= 10V or 15V
150
V
GE
= 15V
10
5
2
17
14
8
11
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
20
100
2
5
8
11
14
17
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
E
ON
, TURN-ON ENERGY LOSS (µJ)
1000
V
GE
= 10V
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
2000
3000
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
T
J
= 150
o
C, R
G
= 50Ω, L = 1mH, V
CE(PK)
= 480V
1000
500
V
GE
= 15V
500
V
GE
= 10V OR 15V
100
40
2
8
11
14
17
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
20
100
2
5
8
11
14
17
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTP7N60C3D, HGT1S7N60C3DS
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
100
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 50Ω, L = 1mH
T
J
= 150
o
C, V
GE
= 15V, R
G
= 50Ω, L = 1mH
40
V
GE
= 10V
10 f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θJC
= 2.1
o
C/W
1
2
V
GE
= 15V
30
20
10
0
10
20
30
0
100
200
300
400
500
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1200
1000
C, CAPACITANCE (pF)
800
C
IES
500
400
300
200
100
0
0
I
G(REF)
= 1.044mA,
R
L
= 50Ω, T
C
= 25
o
C
5
10
15
20
25
12.5
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
10
7.5
5
2.5
0
30
600
400
200
C
RES
0
0
5
10
15
C
OES
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
t
1
P
D
10
-1
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-2
10
-5
10
-4
t
2
0.2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-2
10
-1
10
-3
t
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
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