ESD Diodes
MAZTxxxH Series
Silicon planar type
0.28
±0.05
Unit: mm
0.12
+0.05
–0.02
(0.44)
3˚
(0.44)
For surge absorption circuit
■
Features
•
Two elements anode-common type
•
Power dissipation P
D
: 150 mW
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
3˚
3
1.60
±0.05
(0.80)
0.80
±0.05
1 2
0.28
±0.05
(0.51)
0.60
+0.05
–0.03
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Power dissipation
*
Junction temperature
Storage temperature
Symbol
P
D
T
j
T
stg
Rating
150
150
−55
to
+150
Unit
mW
°C
°C
0 to 0.1
Note) *: P
D
= 150 mW achieved with a printed circuit board.
EIAJ: SC-81
1: Cathode 1
2: Cathode 2
3: Anode
SSMini3-F2 Package
Internal Connection
3
1
2
■
Common Electrical Characteristics
T
a
= 25°C
±
3°C
Parameter
Zener voltage
*
Zener rise operating resistance
Zener operating resistance
Reverse current
Symbol
V
Z
R
ZK
R
Z
I
R
I
Z
I
Z
I
Z
V
R
Conditions
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Min
Typ
Max
Unit
V
Ω
Ω
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
±10
kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
Ω,
Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
(0.15)
(0.375)
0.88
+0.05
–0.03
Publication date: November 2004
SKE00013DED
1
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(4) The products described in this material are intended to be used for standard applications or general elec-
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Consult our sales staff in advance for information on the following applications:
•
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