ESD Diodes
MAZT000H Series
Silicon planar type
0.28
±0.05
Unit: mm
0.12
+0.05
–0.02
0.80
±0.05
For surge absorption circuit
s
Features
•
Two elements anode-common type
•
P
tot
=
150 mW
(0.51)
(0.80) (0.80)
1.60
+0.05
–0.03
3
1.60
±0.05
(0.44)
3˚
(0.44)
0.60
+0.05
–0.03
1 2
(0.80)
0.28
±0.05
(0.51)
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Total power dissipation
*
Junction temperature
Storage temperature
Note) *: With a printed circuit board
Symbol
P
tot
T
j
T
stg
Rating
150
150
−55
to
+150
Unit
mW
°C
°C
3˚
0 to 0.1
EIAJ: SC-89
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
SSMini3-F2 Package
Internal Connection
3
1
2
s
Common Electrical Characteristics
T
a
=
25°C
*1
Parameter
Zener voltage
*2
Zener knee operating resistance
Zener operating resistance
Reverse current
Symbol
V
Z
R
ZK
R
Z
I
R
I
Z
I
Z
I
Z
V
R
Conditions
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Min
Typ
Max
Unit
V
Ω
Ω
µA
Note) 1. Test method according to the JIS C7031 testing
2. Electrostatic breakdown voltage is
±10
kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
Ω,
Contact discharge: 10 times)
3. *1: The V
Z
value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*2: Guaranteed at 20 ms after power application.
(0.15)
(0.375)
0.88
+0.05
–0.03
Publication date: February 2002
SKE00013BED
1
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•
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