UDZS3V6B - UDZS36B
Taiwan Semiconductor
200mW, 2% Tolerance Zener Diodes
FEATURES
Wide zener voltage range selection: 3.6V to 36V
V
Z
tolerance selection of ± 2%
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
KEY PARAMETERS
PARAMETER
V
Z
P
D
T
J
Max.
Package
Configuration
VALUE
3.6-36
200
150
UNIT
V
mW
°C
SOD-323F
Single die
APPLICATIONS
● Constant voltage control
MECHANICAL DATA
●
●
●
●
●
Case: SOD-323F
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 4.594 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
P
D
T
J
T
STG
VALUE
200
-55 to +150
-55 to +150
UNIT
mW
°C
°C
1
Version: G1804
UDZS3V6B - UDZS36B
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
MARKING
CODE
V
Min.
UDZS3V6B
UDZS3V9B
UDZS4V3B
UDZS4V7B
UDZS5V1B
UDZS5V6B
UDZS6V2B
UDZS6V8B
UDZS7V5B
UDZS8V2B
UDZS9V1B
UDZS10B
UDZS11B
UDZS12B
UDZS13B
UDZS15B
UDZS16B
UDZS18B
UDZS20B
UDZS22B
UDZS24B
UDZS27B
UDZS30B
UDZS33B
UDZS36B
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
DA
DB
DC
DE
DF
DG
DH
DJ
DK
DL
DM
DN
DP
DR
DS
3.60
3.89
4.17
4.55
4.98
5.49
6.06
6.65
7.28
8.02
8.85
9.77
10.76
11.74
12.91
14.34
15.85
17.56
19.52
21.54
23.72
26.19
29.19
32.15
35.07
Nom.
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
Max.
3.85
4.16
4.43
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
10.21
11.22
12.24
13.49
14.98
16.51
18.35
20.39
22.47
24.78
27.53
30.69
33.79
36.87
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
mA
V
Z
@ I
ZT
TEST
CURRENT
I
ZT
Z
ZT
@ I
ZT
Ω
Max.
90
90
90
80
60
40
40
30
30
30
30
20
20
20
40
40
40
50
60
80
80
100
100
100
100
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
500
500
300
150
75
75
75
90
150
150
150
160
190
190
220
220
240
240
300
300
310
330
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
REGULAR IMPEDANCE
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
4.50
2.70
2.70
2.70
1.80
0.90
2.70
1.80
0.90
0.63
0.45
0.18
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
1
1
1
1
2
3
3
4
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
V
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms
2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances
3. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an ms
value equal to 10% of the DC zener current (I
ZT
or I
ZK
) is superimpossed to I
ZT
or I
ZK
2
Version: G1804
UDZS3V6B - UDZS36B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 VZ - IZ Characteristics
15
16
100
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
18
20
22
24
27
30
33
10
Zener Current, I
Z
(mA)
0.1
4.7
1
0.01
0.001
0.0001
0
5
10
15
20
Zener Voltage, V
Z
(V)
25
30
35
40
Fig.2 Derating Curve
250
Temp. Coefficient Characteristics(%/℃)
Power Dissipation : P
D
(mW)
0.10
0.08
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
-0.08
0
25
50
75
100
125
150
0
4
5.1
Fig.3 Zener Voltage-Temp.
Coefficient Characteristics
Iz=5mA
Iz=0.5mA
200
150
100
50
0
Ambient Temperature (
o
C)
8
12
16
20
24
28
32
36
36
40
Zener Voltage (V)
4
Version: G1804
嵌入式系统
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