DF3D6.8MFV
ESD Protection Diodes
Silicon Epitaxial Planar
DF3D6.8MFV
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: I/O 1
2: I/O 2
3: GND
VESM
25
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Junction temperature
Storage temperature
Symbol
V
ESD
T
j
T
stg
Rating
±8
150
-55 to 150
Unit
kV
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2013-08-06
Rev.5.0
DF3D6.8MFV
4. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
V
RWM
: Working peak reverse
voltage
V
BR
: Reverse breakdown voltage
I
BR
: Reverse breakdown current
I
R
: Reverse current
V
C
: Clamp voltage
I
PP
: Peak pulse current
R
DYN
: Dynamic resistance
I
F
: Forward current
V
F
: Forward voltage
Fig. 4.1 Definitions of Electrical Characteristis
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Clamp voltage
Symbol
V
RWM
V
BR
I
R
V
C
Note
I
BR
= 5 mA
V
RWM
= 5 V
(Note 1) I
PP
= 1 A
(Note 2) V
R
= 0 V, f = 1 MHz
(Between I/O and GND pins)
V
R
= 0 V, f = 1 MHz
(Between I/O and GND pins)
(Note 2) V
R
= 0 V, f = 1 MHz
(Between I/O and I/O pins)
Test Condition
Min
6
Typ.
15
0.5
0.01
0.22
Max
5
0.5
0.9
0.5
pF
Unit
V
V
µA
V
pF
Input/output-to-ground capacitance C
t-GND
Input/output-to-ground capacitance
∆C
t-GND
difference
Total capacitance
C
t
Note 1: Based on IEC61000-4-5 8/20
µs
pulse.
Note 2: Guaranteed by design.
5. Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±
8 kV
Note:
Criterion: No damage to devices.
2
2013-08-06
Rev.5.0
DF3D6.8MFV
6. Marking
Fig. 6.1 Marking
Marking Code
CZ
Part Number
DF3D6.8MFV
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 Land Pattern Dimensions (Unit: mm)
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2013-08-06
Rev.5.0
DF3D6.8MFV
8. Characteristics Curves (Note)
Fig. 8.1 I
BR
- V
BR
Fig. 8.2 I
R
- V
R
Fig. 8.3 C
t
- V
R
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
4
2013-08-06
Rev.5.0
DF3D6.8MFV
9. Clamp Voltage V
C
- Peak Pulse Current (I
PP
) (Note)
Fig. 9.1 V
C
- I
PP
Note:
Fig. 9.2 Based on IEC61000-4-5 8/20
µ
s pulse.
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
10. Insertion Loss (S21) (Note)
Fig. 10.1 S21 - f
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5
2013-08-06
Rev.5.0
stm32/stm8
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