74VHC157FT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHC157FT
1. Functional Description
•
Quad 2-Channel Multiplexer
2. General
The 74VHC157FT is an advanced high speed CMOS QUAD 2-CHANNEL MULTIPLEXER fabricated with silicon
gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
It consists of four 2-input digital multiplexers with common select and strobe inputs.
When the ST input is held "H" level, selection of data is inhibited and all the outputs become "L" level.
The SELECT decoding determines whether the A or B inputs get routed to their corresponding Y outputs.
An Input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply
voltage. This device can be used to interface 5 V to 3 V systems and on two supply systems such as battery back
up. This circuit prevents device destruction due to mismatched supply and input voltages.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature: T
opr
= -40 to 125
High speed: t
pd
= 4.1 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 5.5 V
Low noise: V
OLP
= 0.8 V (max)
(10) Pin and function compatible with the 74 serise (AC/HC/AHC/LV etc.) 157 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP16B
Start of commercial production
©2016 Toshiba Corporation
1
2014-01
2016-08-18
Rev.3.0
74VHC157FT
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-18
Rev.3.0
74VHC157FT
8. Truth Table
Inputs
ST
H
L
L
L
L
Inputs
SELECT
X
L
L
H
H
Inputs
A
X
L
H
X
X
Inputs
B
X
X
X
L
H
Output
Y
L
L
H
L
H
X:
Don't care
9. System Diagram
©2016 Toshiba Corporation
3
2016-08-18
Rev.3.0
74VHC157FT
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±50
180
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
V
CC
= 3.3
±
0.3 V
V
CC
= 5
±
0.5 V
Test Condition
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 100
0 to 20
Unit
V
V
V
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
4
2016-08-18
Rev.3.0
74VHC157FT
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.36
0.36
±0.1
4.0
µA
V
V
V
Unit
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.44
0.44
±1.0
40.0
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-08-18
Rev.3.0
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
