74VHC132FT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHC132FT
1. Functional Description
•
Quad 2-Input Schmitt NAND Gate
2. General
The 74VHC132FT is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon
gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
Pin configuration and function are the same as the 74VHC00FT but the inputs have hysteresis and with its
schmitt trigger function, the 74VHC132FT can be used as a line receivers which will receive slow input signals.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply
voltage. This device can be used to interface 5 to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
High speed: t
pd
= 4.9 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 2.0
µA
(max) at T
a
= 25
Power down protection is provided on all inputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 5.5 V
Low noise: V
OLP
= 0.8 V (max)
(9) Pin and function compatible with 74ALS132
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP14B
Start of commercial production
©2016 Toshiba Corporation
1
2014-03
2016-08-18
Rev.3.0
74VHC132FT
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-18
Rev.3.0
74VHC132FT
8. Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
9. System Diagram and Waveform
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±50
180
-65 to 150
mW
mA
Unit
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Symbol
V
CC
V
IN
V
OUT
T
opr
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
Unit
V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-08-18
Rev.3.0
74VHC132FT
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Positive threshold voltage
Symbol
V
P
Test Condition
V
CC
(V)
3.0
4.5
5.5
Negative threshold voltage
V
N
3.0
4.5
5.5
Hysteresis voltage
V
H
3.0
4.5
5.5
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
0.90
1.35
1.65
0.30
0.40
0.50
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
2.20
3.15
3.85
1.20
1.40
1.60
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
µA
µA
V
V
V
V
Unit
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
Positive threshold voltage
Symbol
V
P
Test Condition
V
CC
(V)
3.0
4.5
5.5
Negative threshold voltage
V
N
3.0
4.5
5.5
Hysteresis voltage
V
H
3.0
4.5
5.5
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
0.90
1.35
1.65
0.30
0.40
0.50
1.9
2.9
4.4
2.48
3.80
Max
2.20
3.15
3.85
1.20
1.40
1.60
0.1
0.1
0.1
0.44
0.44
±1.0
20.0
µA
µA
V
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-08-18
Rev.3.0
74VHC132FT
12.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
Positive threshold voltage
Symbol
V
P
Test Condition
V
CC
(V)
3.0
4.5
5.5
Negative threshold voltage
V
N
3.0
4.5
5.5
Hysteresis voltage
V
H
3.0
4.5
5.5
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
0.90
1.35
1.65
0.30
0.40
0.50
1.9
2.9
4.4
2.40
3.70
Max
2.20
3.15
3.85
1.20
1.40
1.60
0.1
0.1
0.1
0.55
0.55
±2.0
40.0
V
µA
µA
V
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-08-18
Rev.3.0
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