NOR Gate, HCT Series, 3-Func, 3-Input, CMOS, CDFP14
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Harris |
包装说明 | DFP, FL14,.3 |
Reach Compliance Code | unknown |
其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
系列 | HCT |
JESD-30 代码 | R-CDFP-F14 |
JESD-609代码 | e0 |
负载电容(CL) | 50 pF |
逻辑集成电路类型 | NOR GATE |
最大I(ol) | 0.004 A |
功能数量 | 3 |
输入次数 | 3 |
端子数量 | 14 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DFP |
封装等效代码 | FL14,.3 |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK |
电源 | 5 V |
Prop。Delay @ Nom-Sup | 22 ns |
传播延迟(tpd) | 20 ns |
认证状态 | Not Qualified |
施密特触发器 | NO |
筛选级别 | 38535V;38534K;883S |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | FLAT |
端子节距 | 1.27 mm |
端子位置 | DUAL |
总剂量 | 200k Rad(Si) V |
Base Number Matches | 1 |
HCTS27KMSR | 5962R9573401VCC | 5962R9573401V9A | HCTS27DMSR | HCTS27D/SAMPLE | HCTS27K/SAMPLE | HCTS27HMSR | |
---|---|---|---|---|---|---|---|
描述 | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS, CDFP14 | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14 | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14 | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS, CDIP14 | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS, CDFP14 | NOR Gate, HCT Series, 3-Func, 3-Input, CMOS |
包装说明 | DFP, FL14,.3 | , | DIE, | DIP, DIP14,.3 | , | , | DIE, |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
系列 | HCT | HCT | HCT | HCT | HCT | HCT | HCT |
JESD-30 代码 | R-CDFP-F14 | R-CDIP-T14 | X-XUUC-N14 | R-CDIP-T14 | R-CDIP-T14 | R-CDFP-F14 | X-XUUC-N14 |
负载电容(CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
逻辑集成电路类型 | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE |
功能数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
输入次数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
端子数量 | 14 | 14 | 14 | 14 | 14 | 14 | 14 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
封装形状 | RECTANGULAR | RECTANGULAR | UNSPECIFIED | RECTANGULAR | RECTANGULAR | RECTANGULAR | UNSPECIFIED |
封装形式 | FLATPACK | IN-LINE | UNCASED CHIP | IN-LINE | IN-LINE | FLATPACK | UNCASED CHIP |
传播延迟(tpd) | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | NO | YES | NO | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | FLAT | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | FLAT | NO LEAD |
端子位置 | DUAL | DUAL | UPPER | DUAL | DUAL | DUAL | UPPER |
厂商名称 | Harris | - | Harris | Harris | Harris | Harris | Harris |
JESD-609代码 | e0 | e4 | e0 | e0 | - | - | - |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | - | - | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | - | - | -55 °C |
封装代码 | DFP | - | DIE | DIP | - | - | DIE |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | - | - | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | GOLD | TIN LEAD | Tin/Lead (Sn/Pb) | - | - | - |
总剂量 | 200k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 200k Rad(Si) V | - | - | - |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - |
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