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LTC4160EPDC#TRPBF

产品描述电池 多功能控制器 IC 锂离子/聚合物 20-UTQFN-EP(3x4)
产品类别半导体    多通道IC(PMIC)   
文件大小812KB,共5页
制造商ADI(亚德诺半导体)
官网地址https://www.analog.com
下载文档 详细参数 全文预览

LTC4160EPDC#TRPBF概述

电池 多功能控制器 IC 锂离子/聚合物 20-UTQFN-EP(3x4)

LTC4160EPDC#TRPBF规格参数

参数名称属性值
类别
厂商名称ADI(亚德诺半导体)
系列PowerPath™
包装卷带(TR)
功能多功能控制器
电池化学成份锂离子/聚合物
故障保护过压
接口USB
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装型
封装/外壳20-UFQFN 裸露焊盘
供应商器件封装20-UTQFN-EP(3x4)
基本产品编号LTC4160

文档预览

下载PDF文档
DEMO CIRCUIT 1463A
QUICK START GUIDE
LTC4160EPDC / LTC4160EPDC-1
Switching Power Manager with USB
On-the-Go and Overvoltage Protection
DESCRIPTION
Demonstration Circuit DC1463A is a Switching Power Manager with USB On-the-Go and Overvoltage Protection
featuring the LTC
®
4160.
PERFORMANCE SUMMARY
Specifications are at T
A
= 25°C
SYMBOL PARAMETER
VBUS
Bus Input Voltage Range
V(LDO3V3) 3.3V LDO Output
V(BAT)
I(BAT)
VOUT
V
OTG
Battery Float Voltage
Battery Charge Current
Output Voltage
VBUS voltage in OTG mode
CONDITIONS
VOUT > 3.5V
LTC4160 Constant Voltage Mode
LTC4160-1 Constant Voltage Mode
Constant Current Mode, R
PROG
= 2.00k
ILIM[1..0] = 01b, I(VOUT) ≤ 1.25A, V(BAT) > 3.6V
I(VOUT) ≤ 1.25A, V(BAT) < 3.6V
I(VBUS) ≤ -500mA
MIN
4.35
3.1
4.15
4.05
485
V(BAT)
3.6V
4.5
TYP
MAX
UNITS
6
V
3.4
V
4.23
V
4.13
515
mA
VBAT + 0.45V
V
V
5.5
V
5
QUICK START PROCEDURE
Refer to Figure 1 for the proper measurement
equipment setup and jumper settings and follow the
procedure below.
NOTE.
When measuring the input or output voltage ripple, care
must be taken to avoid a long ground lead on the oscilloscope
probe. Measure the input or output voltage ripple by touching the
probe tip directly across the VBUS or VOUT(x) and GND terminals.
See Figure 2 for proper scope probe technique.
1. Set all jumpers as shown in Figure 1 and LD1 =
0A, PS1 = 5V, LD2 = 0A, LD3 = 0A, PS2 = 3.6V.
Observe VOUT (VM4), LDO3V3 (VM3), and
V(NTC) (VM2). The LTC4160 is operating as
USB power manager. The current from PS1 will
try to be the charging current * (3.6V/5V), or ap-
proximately 400mA, but will be limited by the in-
put current limiter to ~ 100mA.
2. Increase LD3 to 80mA, and LD2 to 25mA. Ob-
serve VOUT(VM4), I(VUSB) (AM1) and LDO3V3
(VM3). Set LD2 to 0A. The loads on VOUT and
LDO3V3 are now reducing the charge current
further.
3. Increase LD3 to 250mA. Observe VOUT(VM4),
I(VUSB) (AM1). The load on VOUT will engage
the input current limit, and VOUT will drop until
the ideal diode engages to provide the difference
current.
1

 
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