The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 25 April 1998
INCH-POUND
MIL-PRF-19500/455C
25 January 1998
SUPERSEDING
MIL-S-19500/455B
19 January 1988
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING
TYPES 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, AND 2N5667S
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-
switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-66) and figure 2 (TO-5).
1.3 Maximum ratings.
Type
P
T
T
A
= +25
q
C
P
T
T
A
= +100
q
C
V
CBO
V
CEO
V
EBO
I
C
I
B
T
stg
and T
op
W
2N5664
2N5665
2N5666, S
2N5667, S
2.5
2.5
1.2
1.2
1/
1/
2
2/
W
30
30
15
15
3/
3/
4/
4/
V dc
250
400
250
400
V dc
200
300
200
300
V dc
6
6
6
6
A dc
5
5
5
5
A dc
1
1
1
1
q
C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
1/ Derate linearly 14.3 mW/
q
C for T
A
> + 25
q
C.
2/ Derate linearly 6.9 mW/
q
C for T
A
> + 25
q
C.
3/ Derate linearly 300 mW/
q
C for T
C
> + 100
q
C .
4/ Derate linearly 150 mW/
q
C for T
C
> +100
q
C .
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/455C
1.4 Primary electrical characteristics at TA = 25
q
C.
h
FE
Limits
V
CE
= 5 V
I
C
= 1 A
2N5665
2N5664
2N5667, S 2N5666, S
|h
fe
|
V
CE
= 5 V
I
C
= 0.5 A dc
f = 10 MHz
V
BE(sat)
I
C
= 3 A dc
1/
V
CE(sat)
I
C
= 3 A dc
1/
t
on
I
C
= 1 A dc
Pulse response
t
off
I
C
= 1 A dc
2N5664
2N5666, S
2N5665
2N5667, S
V dc
Min
Max
25
75
40
120
2.0
7.0
V dc
P
s
0.25
P
s
1.5
P
s
2.0
1.2
0.4
1/ I
B
= 0.3 A dc for 2N5664, 2N5666, 2N5666S; I
B
= 0.6 A dc for 2N5665, 2N5667, 2N5667S.
Type
R
6
JC
q
C/W (max)
2N5664, 2N5665
2N5666, 2N5667
2N5666S, 2N5667S
3.3
6.7
6.7
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/455C
Dimensions
Ltr
Inches
Min
CD
CD
1
CH
HR
HR
1
HT
HT
1
LD
LL
L
1
MHD
MHS
PS
PS
1
S
1
---
.470
.250
---
.115
.050
---
.028
.360
---
.142
.958
.190
.093
.570
Max
.620
.500
.340
.350
.145
.075
.050
.034
.500
.050
.152
.962
.210
.107
.590
Millimeters
Min
---
11.94
6.35
---
2.92
1.27
---
.711
9.14
---
3.62
24.33
4.83
2.36
14.48
Max
15.75
12.70
8.64
8.89
3.68
1.91
1.27
.863
12.70
1.27
3.86
24.43
5.33
2.72
14.99
4
4
3
3
5, 9
5, 9
4
7
3
6
3
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3.
Body contour is optional within zone defined by LD AND CD.
4. These dimensions should be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane.
When gauge is not used, measurement will be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. The collector shall be electrically connected to the case.
9. LD applies between L
1
and LL. Diameter is uncontrolled in L
1
.
FIGURE 1. Physical dimensions of transistor types 2N5664 and 2N5665.
3
MIL-PRF-19500/455C
Dimensions
Ltr
Inches
Min
CD
CH
HD
LC
LD
LL
L
1
LU
P
Q
r
TL
TW
---
.029
0.28
.007
.045
.034
---
0.74
0.71
0.18
1.14
0.86
---
.016
.100
.305
.240
.335
Max
.335
.260
.370
Millimeters
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
6
3
Notes
.1414 Nom
.016
.021
3.59 Nom
0.41
0.53
See notes 13 and 14
.050
.019
---
---
0.41
2.54
1.27
0.48
---
10
4
5
6
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inches (6.35 mm) from the
seating plane.
4. Measured in the zone .050 inches (1.27 mm) and .250 inches
(6.35 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010
inches (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 inches +.001, -.000 (1.37
mm +.03, -.00 ) below the seating plane of the transistor,
maximum diameter leads shall be within .007 inches (.18 mm) of
their true location relative to a maximum width tab. Smaller
diameter leads shall fall within the outline of the maximum diameter
lead tolerance. Figure 3 shows the preferred measured method.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads
11. Diameter of leads in this zone is not controlled.
12. Lead 1 - Emitter; lead 2 - Base, lead 3 - Collector.
13. For transistor types 2N5666 and 2N5667, LL is 1.500 inches (38.1
mm) minimum and 1.75 inches (44.45 mm) maximum.
14. For transistor types 2N5666S and 2N5667S, LL is .500 inches
(12.7 mm) minimum and .75 inches (19.05 mm) maximum.
FIGURE 2. Physical dimensions of transistor types 2N5666, 2N5666S, 2N5667 and 2N5667S.
4
MIL-PRF-19500/455C
Dimensions
Ltr
Min
A
B
C
D
E
F
G
H
J
K
L
.1409
.0702
.182
.009
Inches
Max
.1419
.0712
.199
.011
Millimeters
Min
3.579
1.783
4.62
0.23
Max
3.604
1.809
5.05
0.28
.125 Nom
.054
.372
.0350
.055
.378
.0355
3.18 Nom
1.37
9.45
0.889
1.40
9.60
0.902
.150 Nom
.0325
.0595
.0335
.0605
3.81 Nom
0.826
1.511
0.851
1.537
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The following gauging procedures shall be used: The use of a pin straightener prior to insertion in the gauge is permissible. The
device being measured shall be inserted until its seating plane is .125 inch (3.18 mm) +.010 inch (0.254 mm) from the seating
surface of the gauge. A spacer may be used to obtain the .125 inch (3.18 mm) distance from the gauge seat prior to force
application. A force of 8
".5
ounces shall then be applied parallel and symmetrical to the device's cylindrical axis. When
examined visually after the force application (the force need not be removed) the seating plane of the device shall be seated
against the gauge.
4. The location of the tab locator, within the limits of dimension C, will be determined by the tab and flange dimension of the
device being checked.
FIGURE 3. Gauge for lead and tab location for device types 2N5666, 2N5666S, 2N5667 and 2N5667S.
5
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