EE-SK3W-B
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
18.8
15.8
Photomicrosensor
(Transmissive)
Features
•
•
•
General-purpose model with a 3-mm-wide slot.
PCB mounting type.
With a red LED as an emitter element and a
Photo-Darlington transistor as a detector element.
0.8
0.8
3.2 dia. hole
0.8
0.8
Absolute Maximum Ratings
(Ta = 25°C)
Item
Emitter
Forward current
Pulse forward
current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
Rated
value
15 mA
(see note 1)
---
4V
24 V
---
20 mA
75 mW
(see note 1)
–20°C to
60°C
–20°C to
80°C
260°C
(see note 2)
7.2±0.2
6 min.
Four, 0.45
Four,
0.45
2.54±0.2
Cross section BB
Cross section AA
Collector current
I
C
Internal Circuit
K
C
Collector
dissipation
Unless otherwise specified, the
tolerances are as shown below.
Ambient
temperature
Operating
Storage
Soldering temperature
Note:
P
C
Topr
Tstg
Tsol
A
E
Dimensions
3 mm max.
3
t
mm
v
6
6
t
mm
v
10
10
t
mm
v
18
18
t
mm
v
30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
Symbol
V
F
Value
2.0 V typ., 2.6 V max.
0.01
µA
typ., 5
µA
max.
700 nm typ.
1.5 mA min., 120 mA max.
2 nA typ., 250 nA max.
---
0.9 V typ.
800 nm typ.
180
µs
typ.
60
µs
typ.
I
F
= 15 mA
V
R
= 4 V
I
F
= 3 mA
I
F
= 3 mA, V
CE
= 10 V
V
CE
= 10 V, 0 x
---
I
F
= 3 mA, I
L
= 0.5 mA
V
CE
= 10 V
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 10 mA
V
CC
= 5 V, R
L
= 100
Ω,
I
L
= 10 mA
Condition
148
EE-SK3W-B
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Collector dissipation Pc (mW)
EE-SK3W-B
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ta = 25°C
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
V
CE
= 10 V
Forward current I
F
(mA)
Forward current I
F
(mA)
Pc
I
F
Ambient temperature Ta (°C)
Forward voltage V
F
(V)
Light current I
L
(mA)
Forward current I
F
(mA)
Light Current vs. Collector–Emitter
Voltage Characteristics (Typical)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
I
F
= 3 mA
V
CE
= 10 V
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
V
CE
= 10 V
0 x
Ta = 25°C
I
F
=10 mA
Relative light current I
L
(%)
Light current I
L
(mA)
I
F
= 7 mA
I
F
= 5 mA
I
F
= 3 mA
I
F
= 2 mA
I
F
= 1 mA
Collector–Emitter voltage V
CE
(V)
Ambient temperature Ta (°C)
Dark current I
D
(nA)
Ambient temperature Ta (°C)
Response Time vs. Load Resis-
tance Characteristics (Typical)
V
CC
= 5 V
Ta = 25°C
Sensing Position Characteristics
(Typical)
I
F
= 3 mA
V
CE
= 10 V
Ta = 25°C
Center of optical axis
Response Time Measurement
Circuit
Input
90 %
10 %
Relative light current I
L
(%)
Response time tr, tf (
µ
s)
Output
Input
Output
Load resistance R
L
(kΩ)
Distance d (mm)
149
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
