J309 / J310 / MMBFJ309 / MMBFJ310
J309
J310
MMBFJ309
MMBFJ310
G
S
G
S
TO-92
D
SOT-23
Mark: 6U / 6T
D
NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer
applications. As a common gate amplifier, 16 dB at 100 MHz and
12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings*
Symbol
V
DS
V
GS
I
GF
T
J
,T
stg
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J309-J310
625
5.0
125
357
Max
*MMBFJ309-310
350
2.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
Gate-Source Breakdown Voltage
Gate Reverse Current
I
G
= - 1.0
µA,
V
DS
= 0
V
GS
= - 15 V, V
DS
= 0
V
GS
= - 15 V, V
DS
= 0, T
A
=
125°C
V
DS
= 10 V, I
D
= 1.0 nA
- 25
- 1.0
- 1.0
309
310
- 1.0
- 2.0
- 4.0
- 6.5
V
nA
µA
V
V
V
GS(off)
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
I
DSS
V
GS(
f
)
Zero-Gate Voltage Drain
Current*
Gate-Source Forward Voltage
V
DS
= 10 V, V
GS
= 0
V
DS
= 0, I
G
= 1.0 mA
309
310
12
24
30
60
1.0
mA
mA
V
SMALL SIGNAL CHARACTERISTICS
Re
(
y
is)
Common-Source Input
Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
309
310
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
0.7
0.5
0.25
16
12
12
10,000
8000
mmhos
mmhos
mmhos
dB
mmhos
mmhos
20,000
µmhos
18,000
µmhos
150
µmhos
13,000
12,000
100
150
2.0
4.1
3.0
6.0
µmhos
µmhos
µmhos
µmhos
pF
pF
dB
nV/√Hz
Re
(
y
os)
G
pg
Re
(
y
fs)
Re
(
y
ig)
g
fs
Common-Source Forward
V
DS
= 10, I
D
= 10 mA, f = 100 MHz
Transconductance
Common-Gate Input Conductance V
DS
= 10, I
D
= 10 mA, f = 100 MHz
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Gate Forward
Conductance
Common-Gate Output
Conductance
Drain-Gate Capacitance
Source-Gate Capacitance
Noise Figure
Equivalent Short-Circuit Input
Noise Voltage
V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
309
310
V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
309
310
V
DS
= 10, I
D
= 10 mA, f = 1.0 kHz
309
310
V
DS
= 0, V
GS
= - 10 V, f = 1.0 MHz
V
DS
= 0, V
GS
= - 10 V, f = 1.0 MHz
V
DS
= 10 V, I
D
= 10 mA,
f = 450 MHz
V
DS
= 10 V, I
D
= 10 mA,
f = 100 Hz
g
oss
g
fg
5
g
og
C
dg
C
sg
NF
e
n
2.5
5.0
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
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