PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H21B1
PACKAGE DIMENSIONS
0.972 (24.7)
0.957 (24.3)
H21B2
H21B3
0.472 (12.0)
0.457 (11.6)
C
L
Ø 0.133 (3.4)
Ø 0.126 (3.2)
(2X)
0.249 (6.35)
0.243 (6.15)
+
E
D
+
C
L
0.39 (1.00)
0.34 (0.85)
0.755 (19.2)
0.745 (18.9)
0.129 (3.3)
0.119 (3.0)
0.103 (2.60) NOM
0.433 (11.0)
0.422 (10.7)
Optical
C
L
0.125 (3.2)
0.119 (3.0)
C
L
.295 (7.5)
.272 (6.9)
0.315 (8.0)
SCHEMATIC
0.110 (2.8)
0.091 (2.3)
2
1
3
4
PIN 1 ANODE
PIN 2 CATHODE
PIN 3 COLLECTOR
PIN 4 EMITTER
0.020 (0.51) (SQ)
1
4
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
2
3
DESCRIPTION
The H21B1, H21B2 and H21B3 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a
plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light
rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching
the output from an “ON” to an “OFF” state.
FEATURES
• Opaque housing
• Low cost
• .035" apertures
• High I
C(ON)
© 2002 Fairchild Semiconductor Corporation
Page 1 of 6
6/13/02
PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H21B1
H21B2
H21B3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3 and 4)
Soldering Temperature (Flow)
(2 and 3)
INPUT (EMITTER)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
OUTPUT (SENSOR)
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation (T
C
= 25°C)
(1)
V
CEO
V
ECO
I
C
P
D
30
6
40
150
V
V
mA
mW
I
F
V
R
P
D
50
6
100
mA
V
mW
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
Rating
-55 to +100
-55 to +100
240 for 5 sec
260 for 10 sec
Unit
°C
°C
°C
°C
NOTES:
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
© 2002 Fairchild Semiconductor Corporation
Page 2 of 6
6/13/02
PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H21B1
ELECTRICAL/OPTICAL CHARACTERISTICS
(T
A
=25°C)
PARAMETER
INPUT (EMITTER)
Forward Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
OUTPUT (SENSOR)
Emitter to Collector Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
COUPLED
I
F
= 2 mA, V
CE
= 1.5 V
I
F
= 100 µA, E
e
= 0
I
C
= 1 mA, E
e
= 0
V
CE
= 25 V, E
e
= 0
BV
ECO
BV
CEO
I
CEO
All
All
All
H21B1
H21B2
H21B3
H21B1
On-State Collector Current
I
F
= 5 mA, V
CE
= 1.5 V
I
C(ON)
H21B2
H21B3
H21B1
I
F
= 10 mA, V
CE
= 1.5 V
I
F
= 10 mA, I
C
= 1.8 mA
I
F
= 60 mA, I
C
= 50 mA
I
F
= 10 mA, V
CC
= 5 V,
R
L
= 750
Ω
I
F
= 60 mA, V
CC
= 5 V,
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V,
R
L
= 750
Ω
I
F
= 60 mA, V
CC
= 5 V,
R
L
= 75
Ω
H21B2
H21B3
Saturation Voltage
V
CE(SAT)
All
H21B1/2
All
t
on
All
All
t
off
All
—
45
—
—
—
7
250
—
—
µs
7.0
30
—
0.5
1.0
2.0
2.5
5.0
10
7.5
14
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
45
—
—
100
—
—
—
—
—
—
—
—
—
1.0
1.5
—
µs
V
V
mA
V
V
nA
I
F
= 60 mA
I
R
= 10 µA
V
R
= 3 V
V
F
V
R
I
R
All
All
All
—
6.0
—
—
—
—
1.7
—
1.0
V
V
µA
TEST CONDITIONS
SYMBOL
DEVICES
MIN
TYP
MAX
UNITS
H21B2
H21B3
Turn-On Time
Turn-Off Time
© 2002 Fairchild Semiconductor Corporation
Page 3 of 6
6/13/02
PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H21B1
Figure 1. Output Current vs. Input Current
100
80
60
40
I
CE(on)
, NORMALIZED OUTPUT CURRENT
20
10
8
6
4
2
1
.8
.6
.4
.2
.1
.08
.06
.04
.02
1
2
4
6
8 10
20
40
60 80 100
200
400
600
1000
NORMALIZED TO
I
F
= 5 mA
V
CE
= 1.5 V
PULSED
P
W
= 100
µsec
PRR = 100 pps
H21B2
H21B3
I
F
, INPUT CURRENT (mA)
Figure 2. Output Current vs. Temperature
100
NORMALIZED TO
V
CE
= 1.5 V, I
F
= 5 mA, T
A
= 25
°C
I
CE(on)
, NORMALIZED OUTPUT CURRENT
INPUT PULSED
I
F
= 100 mA
10
I
F
= 60 mA
I
F
= 30 mA
I
F
= 20 mA
1
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA
0.1
-50
-25
0
25
50
75
100
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. V
CE(SAT)
vs. Temperature
NORMALIZED TO
I
C
1.8 mA
, T
A
= 25°C
=
I
F
10 mA
I
C
50 mA
=
I
F
60 mA
PULSED
PW = 100
µs,
PRR = 100 pps
2
V
CE(SAT)
, NORMALIZED
1
0.8
I
C
3.6 mA
=
I
F
20 mA
I
C
1.8 mA
=
I
F
10 mA
0.6
I
C
0.9 mA
=
I
F
5 mA
0.4
-50
-25
0
25
50
75
100
T
A
, AMBIENT TEMPERATURE (°C)
© 2002 Fairchild Semiconductor Corporation
Page 4 of 6
6/13/02
PHOTODARLINGTON
OPTICAL INTERRUPTER SWITCH
H21B1
Figure 4. Leakage Current vs. Temperature
DETECTOR
10
4
10
4
H21B2
EMITTER
H21B3
NORMALIZED TO
V
CE
= 25 V
T
A
= 25
°C
I
R
, NORMALIZED LEAKAGE CURRENT
10
3
I
CEO
, NORMALIZED DARK CURRENT
V
CE
= 25 V
10
2
V
CE
= 10 V
10
3
10
2
NORMALIZED TO
V
R
= 5 V
T
A
= 25
°C
10
10
1
1
0.1
25
50
75
100
0.1
25
50
75
100
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 6. Output Current vs. Distance
Figure 5. Switching Speed vs. R
L
4
I
F
R
L
d, DISTANCE (mils)
1.00
+
V
CC
78.7
157.5
236.2
315
393.7
2
t
ON
, AND t
OFF
NORMALIZED
PW = 300
µs
PRR = 100 pps
7.5
AMPS, V
CC
= 5V
I
F
=
R
L
NORMALIZED TO
R
L
= 750
Ω
I
CE(on)
, NORMALIZED OUTPUT CURRENT
.1
1
.8
.6
.4
t
off
.01
BLACK
SHIELD
+
E
D
NORMALIZED
TO VALUE WITH
SHIELD
REMOVED
+
d
o
BLACK
SHIELD
d
o
t
on
.2
.001
0.1
10
20
40
60 80 100
75
200
400
600 800 1000 1500
750
.0001
0
2
4
6
8
10
d, DISTANCE (mm)
R
L
, LOAD RESISTANCE (Ω)
© 2002 Fairchild Semiconductor Corporation
Page 5 of 6
6/13/02
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