J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177
J174
J175
J176
J177
MMBFJ175
MMBFJ176
MMBFJ177
G
S
S
G
TO-92
D
SOT-23
Mark: 6W / 6X / 6Y
D
NOTE: Source & Drain
are interchangeable
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
- 30
30
50
-55 to +150
Units
V
V
mA
°C
5
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
J174 -177
350
2.8
125
357
Max
*MMBFJ175-177
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177
P-Channel Switch
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
B
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
I
G
= 1.0
µA,
V
DS
= 0
V
GS
= 20 V, V
DS
= 0
V
DS
= - 15 V, I
D
= - 10 nA
174
175
176
177
5.0
3.0
1.0
0.8
30
1.0
10
6.0
4.0
2.5
V
nA
V
V
V
V
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= - 15 V, I
GS
= 0
174
175
176
177
174
175
176
177
- 20
- 7.0
- 2.0
- 1.5
- 100
- 60
- 25
- 20
85
125
250
300
mA
mA
mA
mA
Ω
Ω
Ω
Ω
r
DS(
on
)
Drain-Source On Resistance
V
DS
≤
0.1 V, V
GS
= 0
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Typical Characteristics
Common Drain-Source
-20
- DRAIN CURRENT (mA)
T
A
= 25°C
TYP V
GS(off)
= 4.5 V
Parameter Interactions
- TRANSCONDUCTANCE (mmhos)
100
50
r
DS
I
DSS
g
fs
r
DS
1,000
500
- DRAIN "ON" RESISTANCE
(Ω)
-16
V
GS
= 0 V
0.5 V
-12
-8
1.0 V
1.5 V
2.0 V
10
5
I
DSS
, g
fs
@ V
DS
= 15V,
V
GS
= 0 PULSED
r
DS
@ -100 mV, V
GS
= 0
V
GS(off)
@ V
DS
= - 15V,
I D = - 1.0
µA
100
50
I
D
-4
0
2.5 V
3.0 V
3.5 V
fs
g
1
0
-1
-2
-3
-4
V
DS
- DRAIN-SOURCE VOLTAGE (V)
-5
1
V
GS (OFF)
10
2
5
10
- GATE CUTOFF VOLTAGE (V)
J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177
P-Channel Switch
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
-32
I
D
- DRAIN CURRENT (mA)
- DRAIN CURRENT (mA)
V
DS
= - 15 V
V
GS(off)
= - 4.5 V
Transfer Characteristics
16
V
DS
= - 15 V
V
GS(off)
= - 4.5 V
- 55°C
25°C
125°C
V
GS(off)
= 2.5 V
- 55°C
25°C
125°C
-24
- 55°C
25°C
125°C
12
-16
V
GS(off)
= 2.5 V
- 55°C
25°C
125°C
8
-8
4
0
I
0
1
2
3
V
GS
- GATE-SOURCE VOLTAGE (V)
4
0
0
D
1
2
3
V
GS
- GATE-SOURCE VOLTAGE (V)
4
- NORMALIZED RESISTANCE
(
Ω )
100
50
20
10
5
2
0
0.2
0.4
0.6
0.8
1
V
GS
/V
GS(off)
- NORMALIZED GATE-SOURCE VOLTAGE (V)
1
V
GS(off)
@ 5.0V, 10
µA
g
os
- OUTPUT CONDUCTANCE (
µ
mhos)
Normalized Drain Resistance
vs Bias Voltage
Output Conductance
vs Drain Current
f = 1.0 kHz
-5.0V
-5.0V
1000
r
DS
r
DS
=
V
GS
1 -________
V
GS(off)
100
V
GS(off)
= - 4.5V
-10V
-20V
-20V
-10V
10
V
GS(off)
= - 2.5V
_
1
0.01
I
D
_
0.1
1
- DRAIN CURRENT (mA)
_
_
10
5
r
DS
g
fs
- TRANSCONDUCTANCE (mmhos)
Transconductance
vs Drain Current
C
is
(C
rs
) - CAPACITANCE (pF)
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
10
V
GS(off)
= 2.5V
5
25°C
V
GS(off)
= 6.0V
1
0.5
V
DG
= -15V
f = 1.0 kHz
- 55°C
25°C
125°C
10
5
C is (V
DS
= -15V)
C rs (V
DS
= -15V)
0.1
_
0.1
I
D
_
1
10
- DRAIN CURRENT (mA)
_
_
100
1
0
4
8
12
16
V
GS
- GATE-SOURCE VOLTAGE (V)
20
J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177
P-Channel Switch
(continued)
Typical Characteristics
(continued)
Noise Voltage vs Frequency
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
100
e
n
- NOISE VOLTAGE (nV /
√
Hz)
50
I
D
= - 0.2 mA
Channel Resistance
vs Temperature
1000
500
V
GS(off)
= 2.5V
V
GS(off)
= 4.5V
V
GS(off)
= 8.0V
V
DS
= -100 mV
V
GS
= 0
10
5
I
D
= 5.0 mA
100
50
V
DG
= - 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f
≥
1.0 kHz
1
0.01
0.1
1
10
f - FREQUENCY (kHz)
100
10
-50
0
50
100
150
T
A
- AMBIENT TEMPERATURE (
o
C)
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
TO-92
SOT-23
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
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