BF245A/BF245B/BF245C
BF245A/BF245B/BF245C
N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
P
D
T
J,
T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @T
A
=25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Parameter
Value
30
-30
10
350
2.8
- 55 ~ 150
Units
V
V
mA
mW
mW/°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V
DS
= 0, I
G
= 1µA
V
DS
= 15V, I
D
= 200µA
Min.
-30
-0.4
-1.6
-3.2
-0.5
-2.2
-3.8
-7.5
-8
-5
Max.
Units
V
V
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
V
GS
Gate-Source
BF245A
BF245B
BF245C
V
GS
(off)
I
GSS
Gate-Source Cut-off Voltage
Gate Reverse Current
V
DS
= 15V, I
D
= 10nA
V
GS
= -20V, V
GS
= 0
V
nA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
BF245A
BF245B
BF245C
On Characteristics
Common Source Forward
g
fs
Transconductance
V
GS
= 15V, V
GS
= 0
2
6
12
3
6.5
15
25
6.5
mA
V
GS
= 15V, V
GS
= 0, f = 1KHz
mmhos
©2003 Fairchild Semiconductor Corporation
Rev. A1, June 2003
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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©2003 Fairchild Semiconductor Corporation
Rev. I2
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