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FCD4N60 — N-Channel SuperFET® MOSFET
October 2013
FCD4N60
N-Channel SuperFET
®
MOSFET
600 V, 3.9 A, 1.2
Features
• 650 V @T
J
= 150 °C
• Typ. R
DS(on)
= 1.0
• Ultra Low Gate Charge (Typ. Q
g
= 12.8 nC)
• Low Effective Output Capacitance (Typ. C
oss
.eff = 32 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET
®
MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
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